Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

The passivation of III-V compound semiconductor surface by laser CVD

Laser CVD법에 의한 III-V화합물 반도체 표면의 불활성화

  • Lee, H.S. (Dep. of Electrical Engineering, Korea Univ.) ;
  • Lee, K.S. (Dep. of Electrical Engineering, Korea Univ.) ;
  • Cho, T.H. (Dep. of Electrical Engineering, Korea Univ.) ;
  • Huh, Y.J. (Dep. of Electrical Engineering, Korea Univ.) ;
  • Kim, S.J. (Dep. of Electrical Engineering, Korea Univ.) ;
  • Sung, Y.K. (Dep. of Electrical Engineering, Korea Univ.)
  • 이한신 (고려대학교 공과대학 전기공학과) ;
  • 이계신 (고려대학교 공과대학 전기공학과) ;
  • 조태훈 (고려대학교 공과대학 전기공학과) ;
  • 허윤종 (고려대학교 공과대학 전기공학과) ;
  • 김성진 (고려대학교 공과대학 전기공학과) ;
  • 성영권 (고려대학교 공과대학 전기공학과)
  • Published : 1993.07.18
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Abstract

The silicon-nitride films formed by laser CVD method are used for passivating GaAs surfaces. The electrical Properties of metal-insulator-GaAs structure are studied to determined the interfacial characteristics by C-V curves and deep level transient spectroscopy(DLTS). The SiN films are photolysisly deposited from $SiH_4\;and\;NH_3$ in the range of $100^{\circ}C-300^{\circ}C$ on P type, (100) GaAs. The hysteresis is reduced and interface trap density is lowered to $10^{12}-10^{13}$ at $100^{\circ}C-200^{\circ}C$. The surface leakage current is studied too. The passivated GaAs have a little leakage current compared to non passivated GaAs.

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