• Journal of the Optical Society of Korea
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• v.5 no.3
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• pp.83-89
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• 2001

Room temperature quasi-continuous operation is achieved near 1556 nm with threshold current as low as 2.2 mA from a 5.6-${\mu}{\textrm}{m}$ oxide-aperture vertical-cavity surface-emitting laser. Wafer fusion techniques are employed to combine the GaAs/AlGaAs mirror and the InP-based InGaAs/InGaAsP active layer. In this structure, an $Al_x/O_y$/GaAs distributed bragg reflector and intra-cavity contacts are used to reduce free carrier absorption.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1654-1659
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• 2014

Tunneling field-effect transistors (TFETs) are very applicable to low standby-power application by their virtues of low off-current ($I_{off}$) and small subthreshold swing (S). However, low on-current ($I_{on}$) of silicon-based TFETs has been pointed out as a drawback. To improve $I_{on}$ of TFET, a gate-all-around (GAA) TFET based on III-V compound semiconductor with InAs/InGaAs/InP multiple-heterojunction structure is proposed and investigated. Its performances have been evaluated with the gallium (Ga) composition (x) for $In_{1-x}Ga_xAs$ in the channel region. According to the simulation results for $I_{on}$, $I_{off}$, S, and on/off current ratio ($I_{on}/I_{off}$), the device adopting $In_{0.53}Ga_{0.47}As$ channel showed the optimum direct-current (DC) performance, as a result of controlling the Ga fraction. By introducing an n-type InGaAs thin layer near the source end, improved DC characteristics and radio-frequency (RF) performances were obtained due to boosted band-to-band (BTB) tunneling efficiency.

• ETRI Journal
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• v.31 no.5
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• pp.601-603
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• 2009

This letter presents a high performance 2.4 GHz two-stage power amplifier (PA) operating in the temperature range from $-30^{\circ}C$ to $+85^{\circ}C$ for IEEE 802.11g, wireless local area network application. It is implemented in InGaP/GaAs hetero-junction bipolar transistor technology and has a bias circuit employing a temperature compensation technique for error vector magnitude (EVM) performance. The technique uses a resistor made with a base layer of HBT. The design improves EVM performance in cold temperatures by increasing current. The implemented PA has a dynamic EVM of less than 4%, a gain of over 26 dB, and a current less than 130 mA below the output power of 19 dBm across the temperature range from $-30^{\circ}C$ to $+85^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.9
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• pp.1381-1387
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• 1989

For the fabrication of ohmic contact to p-type GaAs, In Liquid Metal Ions were implanted into p-type GaAs (Zn:1.5x10**19/cm**3). After the samples were processed by Infrared rapid thermal annealing (IRTA0 or Furance Annealing (FA), I-V and specific contact contact resistivity were measured. Specific contact resistivity was found to be 1.7x10**-5 \ulcorner-cm\ulcornerin IRTA 750\ulcorner, 10 sec annealed sample. The surface characteristics of the samples were investigated with SEM, RHEED, AES. From these results we can know that implanted In ions were formed mixing layer of InAs at the surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.605-610
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• 2006

We have investigated $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ structures for pseudomorphic high electron mobility transistor(pHEMT), which were grown by molecular beam epitaxy(MBE) and consequently annealed by rapid thermal anneal(RTA), using Hall measurement, photoluminescence, and transmission electron microscopy (TEM). According to intensity and full-width at half maximum maintained stable at the same energy level, the quantized energy level in $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ quantum wells was independent of the RTA conditions. However, the Hall mobility was decreased from $6,326cm^2/V.s\;to\;2,790cm^2/V.s\;and\;2,078cm^2/V.s$ after heat treatment respectively at $500^{\circ}C\;and\;600^{\circ}C$. The heat treatment which is indispensable during the fabrication procedure would cause catastrophic degradation in electrical transport properties. TEM observation revealed atomically non-uniform interfaces, but no dislocations were generated or propagated. From theoretical consideration about the mobility changes owing to inter-diffusion, the degraded mobility could be directly correlated to the interface scattering as long as samples were annealed below $600^{\circ}C$ lot 1 min.

• Journal of Pharmacopuncture
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• v.13 no.3
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• pp.63-71
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• 2010

Objectives: Gallic acid (GA) is the major component of tannin which could be easily founded in various natural materials such as green tea, red tea, grape juice, and Corni Fructus. The purpose of this study is to investigate the effect of Gallic acid (GA) on production of interleukin (IL) in mouse macrophage Raw 264.7 cells stimulated by lipopolysaccharide (LPS). Methods: Productions of interleukins were measured by High-throughput Multiplex Bead based Assay with Bio-plex Suspension Array System based on $xMAP^{(R)}$ (multi-analyte profiling beads) technology. Firstly, cell culture supernatant was obtained after treatment with LPS and GA for 24 hour. Then, it was incubated with the antibody-conjugated beads for 30 minutes. And detection antibody was added and incubated for 30 minutes. And Strepavidin-conjugated Phycoerythrin (SAPE) was added. After incubation for 30 minutes, the level of SAPE fluorescence was analyzed on Bio-plex Suspension Array System and concentration of interleukin was determined. Results: The results of the experiment are as follows. 1. GA significantly inhibited the production of IL-3, IL-10, IL-12p40, and IL-17 in LPS-induced mouse macrophage RAW 264.7 cells at the concentration of 25, 50, 100, 200 uM (p<0.05). 2. GA significantly inhibited the production of IL-6 in LPS-induced mouse macrophage RAW 264.7 cells at the concentration of 50, 100, 200 uM (p<0.05). 3. GA diminished the production of some cytokine such as IL-4, IL-5, and IL-13 in LPS-induced mouse macrophage RAW 264.7 cells. 4. GA did not show the inhibitory effect on the production of IL-$1{\alpha}$ and IL-9 in LPS-induced mouse macrophage RAW 264.7 cells. Conclusions: These results suggest that GA has anti-inflammatory activity related with its inhibitory effects on the production of interleukins such as IL-3, IL-10, IL-12p40, IL-17, and IL-6 in LPS-induced macrophages.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.42 no.12
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• pp.1057-1064
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• 2014

The satellite on geostationary orbit accommodates multiple payloads into a single spacecraft platform and launched in June 26, 2010. The electrical power required to the satellite during sunlight is generated by a solar array wing. The solar cells are the GaInP/GaAs/Ge Triple Junction cells named Gaget2 cells from RWE Space, which were based on a Spectrolab epitaxy. This paper evaluates solar array power performance at end of design life based on the trend analysis results for the flight data on geostationary orbit. The estimated solar array power performance at end of design life compares with the power performance provided by solar array manufacturer. The solar cells show nominal behavior without significant degradation through the trend analysis results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.2 s.117
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• pp.177-182
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• 2007

This paper presents the InGaP/GaAs HBT differential LC VCO with low phase noise performance for adaptive feedback interference cancellation system(AF-lCS). The VCO is verified with enhanced tank structure including filtering technique. The output tuning range for proposed VCO using asymmetric inductor and symmetric capacitors withlow pass filtering technique is 207 MHz. The output powers are -6.68 including balun and cable loss. The phase noise of this VCO at 10 kHz, 100 kHz and 1 MHz are -102.02 dBc/Hz, -112.04 dBc/Hz and -130.40 dBc/Hz. The VCO is designed within total size of $0.9{\times}0.9mm^2$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.7
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• pp.1036-1043
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• 1993

GaAs/AIGaAs resonant tunneling structures have been grown by atmospheric pressure MOCVD. Resonant tunneling diodes fabricated with the structure grown at 650t showed a high peak-to-valley (P/V) current ratio of 2.35 at room temperature. P/V current ratio increased to 15.3 at 77K. Numerically calculated peak current agrees well with the experimental result. Resonant tunneling diodes with AIGaAs as a barrier and InGaAs as a quantum well and a spacer layer yielded a high P/V current ratio of 4.0 and a peak current density of 8.6KA/c# at room temperature because of increased carrier supply.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1187-1194
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• 2003

A BCl$_3$/Ne plasma chemistry was used to etch Ga-based (GaAs, AIGaAs, GaSb) and In-based (InGaP, InP, InAs and InGaAsP) compound semiconductors in a Planar Inductively Coupled Plasma (ICP) reactor. The addition of the Ne instead of Ar can minimize electrical and optical damage during dry etching of III-V semiconductors due to its light mass compared to that of Ar All of the materials exhibited a maximum etch rate at BCl$_3$ to Ne ratios of 0.25-0.5. Under all conditions, the Ga-based materials etched at significantly higher rates than the In-based materials, due to relatively high volatilities of their trichloride etch products (boiling point CaCl$_3$ : 201 $^{\circ}C$, AsCl$_3$ : 130 $^{\circ}C$, PCl$_3$: 76 $^{\circ}C$) compared to InCl$_3$ (boiling point : 600 $^{\circ}C$). We obtained low root-mean-square(RMS) roughness of the etched sulfate of both AIGaAs and GaAs, which is quite comparable to the unetched control samples. Excellent etch anisotropy ( > 85$^{\circ}$) of the GaAs and AIGaAs in our PICP BCl$_3$/Ne etching relies on some degree of sidewall passivation by redeposition of etch products and photoresist from the mask. However, the surfaces of In-based materials are somewhat degraded during the BCl$_3$/Ne etching due to the low volatility of InCl$_{x}$./.