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Electronics and Telecommunications Research Institute (한국전자통신연구원)
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2.4 GHz WLAN InGaP/GaAs Power Amplifier with Temperature Compensation Technique

  • Yoon, Sang-Woong (Department of Electronics and Radio Engineering, School of Electronics and Information, Kyung Hee University) ;
  • Kim, Chang-Woo (Department of Electronics and Radio Engineering, School of Electronics and Information, Kyung Hee University)
  • Received : 2009.02.25
  • Accepted : 2009.06.15
  • Published : 2009.10.31
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Abstract

This letter presents a high performance 2.4 GHz two-stage power amplifier (PA) operating in the temperature range from $-30^{\circ}C$ to $+85^{\circ}C$ for IEEE 802.11g, wireless local area network application. It is implemented in InGaP/GaAs hetero-junction bipolar transistor technology and has a bias circuit employing a temperature compensation technique for error vector magnitude (EVM) performance. The technique uses a resistor made with a base layer of HBT. The design improves EVM performance in cold temperatures by increasing current. The implemented PA has a dynamic EVM of less than 4%, a gain of over 26 dB, and a current less than 130 mA below the output power of 19 dBm across the temperature range from $-30^{\circ}C$ to $+85^{\circ}C$.

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References

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