Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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RTA Effect on Transport Characteristics in Al0.25Ga0.75As/In0.2Ga0.8As pHEMT Epitaxial Structures Grown by Molecular Beam Epitaxy

MBE로 성장된 Al0.25Ga0.75As/In0.2Ga0.8As pHEMT 에피구조의 RTA에 따른 전도 특성

  • 김경현 (한국전자통신연구원 IT융합부품연구소) ;
  • 홍성의 (한국전자통신연구원 IT융합부품연구소) ;
  • 백문철 (한국전자통신연구원 IT융합부품연구소) ;
  • 조경익 (한국전자통신연구원 IT융합부품연구소) ;
  • 최상식 (전북대학교 반도체과학기술학과 SPRC) ;
  • 양전욱 (전북대학교 반도체과학기술학과 SPRC) ;
  • 심규환 (전북대학교 반도체과학기술학과 SPRC)
  • Published : 2006.07.01
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Abstract

We have investigated $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ structures for pseudomorphic high electron mobility transistor(pHEMT), which were grown by molecular beam epitaxy(MBE) and consequently annealed by rapid thermal anneal(RTA), using Hall measurement, photoluminescence, and transmission electron microscopy (TEM). According to intensity and full-width at half maximum maintained stable at the same energy level, the quantized energy level in $Al_{0.25}Ga_{0.75}As/In_{0.2}Ga_{0.8}As$ quantum wells was independent of the RTA conditions. However, the Hall mobility was decreased from $6,326cm^2/V.s\;to\;2,790cm^2/V.s\;and\;2,078cm^2/V.s$ after heat treatment respectively at $500^{\circ}C\;and\;600^{\circ}C$. The heat treatment which is indispensable during the fabrication procedure would cause catastrophic degradation in electrical transport properties. TEM observation revealed atomically non-uniform interfaces, but no dislocations were generated or propagated. From theoretical consideration about the mobility changes owing to inter-diffusion, the degraded mobility could be directly correlated to the interface scattering as long as samples were annealed below $600^{\circ}C$ lot 1 min.

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References

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