Ohmic Contact of P-type GaAs Implanted the Liquid Metal Ion

액체금속이온이 주입된 p형 GaAs의 오옴성 접촉

For the fabrication of ohmic contact to p-type GaAs, In Liquid Metal Ions were implanted into p-type GaAs (Zn:1.5x10**19/cm**3). After the samples were processed by Infrared rapid thermal annealing (IRTA0 or Furance Annealing (FA), I-V and specific contact contact resistivity were measured. Specific contact resistivity was found to be 1.7x10**-5 \ulcorner-cm\ulcornerin IRTA 750\ulcorner, 10 sec annealed sample. The surface characteristics of the samples were investigated with SEM, RHEED, AES. From these results we can know that implanted In ions were formed mixing layer of InAs at the surface.