• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.115-118
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• 1990

Recently, it has been reported that the Insulating films deposited by PECVD show some degradation under somewhat high electric field. In this paper, we Introduce silicon nitride films deposited by LCVD, and evaluate the breakdown and wear-out of these films by TDDB test. Further, failure times against electric field are examined and acceleration factors $\gamma$ are obtained for each case. As a result, it is shown that the breakdown and wear-out limitation for these films is improved.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.113-114
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• 2008

The purpose of this paper is to analyze AC Breakdown of solid/air composite insulation depending on the thickness and the pressure of dry air for eco-friendly insulation. SF6 gas has been widely used in electric equipment as gas insulation because of high dielectric strength and arc extinguishing performance. However, because SF6 gas is one of the green house effect gases, alternative insulation such as SF6 mixture, extremely low temperature gas, vacuum, liquid and solid insulating are being investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.293-296
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• 1997

The experimental system used for vapor deposition polymerization (VDP) from PMDA (Pyromellitic dianhydride) and DDE (4, 4-diaminodiphenyl ether) were changed to PI (polyimide) thin films by thermal curing. The curing temperatures were 20$0^{\circ}C$, 25$0^{\circ}C$, 30$0^{\circ}C$, 35$0^{\circ}C$. When test number was 40, the electric breakdown strengths of PI were 1.21MV/cm, 3.94MV/cm, 4.61MV/cm, 4.55MV/cm according to curing temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.3
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• pp.333-339
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• 2004

For an electrical insulation design of HTS cable, it is important to understand the dielectric characteristics of insulation materials in L$N_2$ and the insulation type. Generally, the electrical insulation of HTS Cable is classified into two types of the composite insulation and solid insulation type. In this research, we selected the insulation paper/L$N_2$ composite insulation type for the electric insulation of a HTS cable, and studied electric insulation characteristics of synthetic Laminated Polypropylene Paper(LPP) in liquid nitrogen(L$N_2$) for the application to high temperature superconducting(HTS) cable. Furthermore, we compared the breakdown characteristics of the butt gap and bended mini-model cable. It is necessary to understand the winding parameter of insulation paper/LN2 composite insulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.336-338
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• 2006

Diagnostic tests are used to evaluate the insulation condition of stator windings in traction motor. These tests included ac current, tan delta and maximum partial discharge. The insulation condition of stator windings was assessed by three test items. The stator windings of traction motor were m good condition. After completing the diagnostic tests, the stator windings of traction motors were subjected to gradually increasing ac voltage, until the insulation punctured. No.5 stator windings failed near rated voltage of 18.9 kV. The breakdown voltage of No.1 stator windings was 13.0. The failure was located m a line-end coil at the exit from the core slot.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.359-363
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• 1989

Recently, it is reported that the behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration. Furthermore, when thin oxide films are applied in practical device, the presence of oxide defects will be a serious problem. In this paper, because TDDB is the useful method to measure the effective density of defects, we stressed MOS structure that is 150 A of thermally grown $SiO_2$as a function of electric field (9-19 MV/cm), temperature ($22^{\circ}C$ - $150^{\circ}C$) and current. By examing TDDB under positive voltage, long-term oxide breakdown reliabiliy is described. From these data, breakdown wearout limitation for the oxide films can be characterized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1065-1070
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• 2003

HTO(High Temperature Oxide) films are mainly used as a gate insulator for polysilicon thin film transistors(Poly-Si TFT's). The HTO films, however, show the demerits of a high leakage current and a low electric breakdown voltage comparing with conventional thermal oxides even though they have a better surface in roughness than the thermal oxides. In this paper, we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's. The leakage current and electric breakdown voltage of the ONO and HTO were measured. The drain current variation of poly-Si TFT's with a variety of gate insulators was observed. The thickness optimization in ONO films was carried out by studying I$\_$on/I$\_$off/ ratio of the poly-Si TFT's as a function of the thickness of ONO film adopted as gate insulator.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1057-1060
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• 2003

This paper is about the optimized fabricated parameter in the EDMOSFET(Extended drain MOSFET) with a various temperature. As we know, the two important factors of EDMOSFET parameters are breakdown voltage and on Resistance. So, we have aims of the power EDMOSFET design to have high breakdown voltage and low on resistance. Thus in this paper, we will show the figure of merit in LDMOS (BV/Ron) in accordance with increase in temperature(300K-500K, step:50K), and measure electronic characteristics of power EDMOSFET. As a result, the important factors in design of EDMOS are temperature and Lg.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.105-108
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• 2020

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.136-139
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• 2006

최근 전력수요의 급증과 더불어 기기의 소형화와 경랑화를 위해 고분자절연재료의 사용이 증가하였으며, 근래 들어 환경성의 문제가 거론되면서 반영구적인 절연재료의 요구가 급증하였다. 그로 인하여 초고압 케이블의 절연재료로서 가교폴리에틸렌이 사용되어지고 있다. 이에 본 논문에서는 초고압전력용 케이블에서 절연재료로 사용되고 있는 가교폴리에틸렌 (XLPE) 내부전계분포 및 파괴전압과의 상관관계를 알아보기 위해 케이블에 칩 전극을 삽입하여 두께를 0.5, 1, l.5 [mm] 변화시켜 파괴전계를 검출하였으며, 또한 와이블 해석을 통한 파괴전압의 척도파라미터룰 검출하여, 시뮬레이션 인가전압으로 사용하였다. 시뮬레이션 경계요소법 (BEM)을 이용한 3 차원 전계해석 프로그램으로 조사하였다.