Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Properties of Poly-Si TFT's using Oxide-Nitride-Oxide Films as Gate Insulators

Oxide-Nitride-Oxide막을 게이트 절연막으로 사용하여 제조한 다결정실리콘 박막트랜지스티의 특성

  • 이인찬 (경상대학교 대학원 전기공학과 및 RICIC) ;
  • 마대영 (경상대학교 전기전자공학부 및 RICIC)
  • Published : 2003.12.01
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Abstract

HTO(High Temperature Oxide) films are mainly used as a gate insulator for polysilicon thin film transistors(Poly-Si TFT's). The HTO films, however, show the demerits of a high leakage current and a low electric breakdown voltage comparing with conventional thermal oxides even though they have a better surface in roughness than the thermal oxides. In this paper, we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's. The leakage current and electric breakdown voltage of the ONO and HTO were measured. The drain current variation of poly-Si TFT's with a variety of gate insulators was observed. The thickness optimization in ONO films was carried out by studying I$\_$on/I$\_$off/ ratio of the poly-Si TFT's as a function of the thickness of ONO film adopted as gate insulator.

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References

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