Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

The factors involved in the wear-out of the thin oxide film

얇은 산화막의 Wear-out 현상과 제인자

  • Kim, Jae-Ho (Department of Electrical Engineering, Korea University) ;
  • Yi, Seung-Hwan (Department of Electrical Engineering, Korea University) ;
  • Kim, Chun-Sub (Department of Electrical Engineering, Korea University) ;
  • Sung, Yung-Kwon (Department of Electrical Engineering, Korea University)
  • 김재호 (고려대학교 전기공학과) ;
  • 이승환 (고려대학교 전기공학과) ;
  • 김천섭 (고려대학교 전기공학과) ;
  • 성영권 (고려대학교 전기공학과)
  • Published : 1989.07.21
Download PDF
⟨ Previous Next ⟩

Abstract

Recently, it is reported that the behavior of thermal $SiO_2$ under high electric field and current condition has a major effect on MOS device degration. Furthermore, when thin oxide films are applied in practical device, the presence of oxide defects will be a serious problem. In this paper, because TDDB is the useful method to measure the effective density of defects, we stressed MOS structure that is 150 A of thermally grown $SiO_2$as a function of electric field (9-19 MV/cm), temperature ($22^{\circ}C$ - $150^{\circ}C$) and current. By examing TDDB under positive voltage, long-term oxide breakdown reliabiliy is described. From these data, breakdown wearout limitation for the oxide films can be characterized.

Keywords