• Journal of IKEEE
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• v.26 no.3
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• pp.333-340
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• 2022

Process and device simulations were performed to determine the optimal ion implantation conditions to prevent double snapback of high voltage operating DDDNMOS (double diffused drain N-type MOSFET) device for ESD protection. By examining the effects of HP-Well, N^- drift and N⁺ drain ion implantation on the double snapback and avalanche breakdown voltages, it was possible to prevent double snapback and improve the electrostatic protection performance. If the ion implantation concentration of the N^- drift region rather than the HP-Well region is optimally designed, it prevents the transition from the primary on-state to the secondary on-state, so that relatively good ESD protection performance can be obtained. Since the concentration of the N^- drift region affects the leakage current and the avalanche breakdown voltage, in the case of a process technology with an operating voltage greater than 30V, a new structure such as DPS or colligation of optimal process conditions can be applied. In this case, improved ESD protection performance can be realized.

• Electrical & Electronic Materials
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• v.5 no.3
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• pp.320-327
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• 1992

Twin-tub CMOS 공정에 의해 제작된 서브마이크로미터 채널길이를 갖는 n채널 및 p채널 MOSFET의 특성을 고찰하였다. n채널 및 p채널 영역에서의 불순물 프로파일과 채널 이온주입 조건에 따른 문턱전압의 의존성 및 퍼텐셜 분포를 SUPREM-II와 MINIMOS 4.0을 사용하여 시뮬레이션하였다. 문턱전압 조정을 위한 counter-doped 보론 이온주입에 의해 p채널 MOSFET는 표면에서 대략 0.15.mu.m의 깊이에서 매몰채널이 형성되었다. 각 소자의 측정 결과, 3.3[V] 구동을 위한 충분한 여유를 갖는 양호한 드레인 포화 특성과 0.2[V]이하의 문턱전압 shift를 갖는 최소화된 짧은 채널 효과, 10[V]이상의 높은 펀치쓰루 전압과 브레이크다운 전압, 낮은 subthreshold 값을 얻었다.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.9
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• pp.1157-1165
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• 2000

A classic examples of the abnormal combustions are the knock and misfire, which raise noxious performance and life of the engine. A heavy knock can also cause severe damages to the engine itself, which gives more reason why it must be detected and corrected. With the response of the today's requirements, we have researched the new diagnostic system which uses the breakdown voltage characteristics between electrodes of spark plug. This breakdown voltage depends on the pressure, temperature and even the shape and material of electrodes. But there is no data of breakdown voltage in case of using the spark plug as a electrodes. So, in this study, we show the breakdown voltage characteristic by pressure and temperature in constant volume bomb, which will make it possible to diagnose the engine combustion phenomenon.

• Journal of Satellite, Information and Communications
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• v.10 no.4
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• pp.1-5
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• 2015

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different partial p-well(PPW) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device shows typical SCR-like characteristics with low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW_PGM(primary gate middle) and optimal CPS(counter pocket source) implant demonstrate the stable ESD protection performance with high latch-up immunity.

• Journal of IKEEE
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• v.23 no.3
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• pp.811-816
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• 2019

The silicon-adsorbed oxygen(Si-O) superlattice grown by ultra high vacuum-chemical vapor deposition(UHV-CVD) was introduced as an epitaxial barrier for silicon quantum electron devices. The current-voltage (I-V) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the Si-O superlattice can serve as an epitaxially grown insulating layer as possible replacement of silicon-on-insulator(SOI). This thick barrier may be useful as an epitaxial insulating gate for field effect transistors(FETs). The rationale is that it should be possible to fabricate a FET on top of another FET, moving one step closer to the ultimate goal of future silicon-based three-dimensional integrated circuit(3DIC).

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.83-88
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• 2003

The optoelectronic characteristics of semiconducto-atomic superlattice as a function of deposition temperature and annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy(MBE) system. As an experimental result, the superlattice with multilayer Si-O structure showed a stable photoluminescence(PL) and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronics and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in ultra-high speed and lower power CMOS devices in the future, and it can be directly integrated with silicon ULSI processing.

• Transactions of the Korean Society of Automotive Engineers
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• v.8 no.1
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• pp.23-31
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• 2000

Knock and misfire, kinds of abnormal combustion, are highly undesirable effect on the internal combustion engine. So, it is important to detect these avnormal combuition and control the ignition timing etc. to avoid these mal-effect factors in real engine system. In this study, the system which detects the knock and the misfire using by spark plug is presented. This system is based on the effect of modulation breakdown voltage(BDV) between the spark gaps. The voltage drop between spark plug electrodes, when an electrical breakdown is initiated, depends on the temperature and pressure in combustion chamber. So, we can detect knock and misfire that produce changes in gas temperature and pressure (consequently, its density) using by BDV signal change which carries information about the character of combustion.

• Journal of Satellite, Information and Communications
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• v.11 no.4
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• pp.21-26
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• 2016

The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different implant of channel blocking region was discussed for high voltage I/O applications. A conventional NSCR standard device shows low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified channel blocking structure demonstrate the improved ESD protection performance as a function of channel implant variation. Therefore, the channel blocking implant was a important parameter. Since the modified device with CPS_PDr+HNF structure satisfied the design window, we confirmed the applicable possibility as a ESD protection device for high voltage operating microchips.

• Journal of Satellite, Information and Communications
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• v.9 no.4
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• pp.63-68
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• 2014

Electrostatic Discharge(ESD) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different partial p-well(PPW) structure was discussed for high voltage I/O applications. A conventional NSCR_PPS standard device shows typical SCR-like characteristics with low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified PPW demonstrate the stable ESD protection performance with high latch-up immunity.

• Transactions of the Korean Society of Automotive Engineers
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• v.7 no.6
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• pp.42-48
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• 1999

Engine misfire causes of the negative effect on exhaust emission such as HC, CO, and NOX . Moreover, it causes damage to the three-way-catalyst(TWC) system permanently. The crankshaft velocity fluctuation(CVF) method has been applied for the real cars as misfire detection system usually, which utilizes the crank angle sensor input to calculate the variation of the crankshaft rotational speed. But this approach has the limit due to the fact that three could be problem under certain engine condition like as deceleration or high speed condition . Therefore the development of new methods are requested today. This study introduced the new method of misfire detection using breakdown voltage(BDV) characteristics between spark plug electrouds.