Acknowledgement
This work was supported by the Seahn university research fund in 2022.
References
- M. P. J. Mergens, W. Wilkening, S. Mettler, H. Wolf, A. Stricker and W. Fichtner, "Analysis of lateral DMOS power devices under ESD stress conditions," IEEE Trans. Electron Devices, Vol.47, pp.2128-2137, 2000. DOI: 10.1109/16.877175
- K. Kawamoto, S. Takahashi, S. Fujino and I. Shirakawa, "A no-snapback LDMOSFET with automotive ESD endurance," IEEE Trans. Electron Devices, Vol.49, pp.2047-2053, 2002. DOI: 10.1109/TED.2002.804734
- G. Bosselli, S. Meeuwsen, T. Mouthaan and F. Kuper, "Investigations on double diffused MOS (DMOS) transistors under ESD zap conditions," in Proc. EOS/ESD Symp., pp.11-18, 1999. DOI: 10.1109/EOSESD.1999.818984
- M. D. Ker and K. H. Lin, Double snapback characteristics in high-voltage nMOSFETs and the impact on-chip ESD protection, IEEE Electron Dev. Lett., Vol.25, No.9, pp.640-642, 2004. DOI:10.1109/LED.2004.833372
- J. W. Yang and, Y. J. Seo, "Improvements of Extended Drain NMOS (EDNMOS) Device for Electrostatic Discharge (ESD) Protection of High Voltage Operating LDI Chip," Journal of Satellite, Information and Communications, Vol.7, No.2, pp.18-24, 2012.
- Y. J. Seo and K. H. Kim, "Characteristics of an extended drain N-type MOS device for electrostatic discharge protection of a LCD driver chip operating at high voltage," J. Korean Phys. Soc., Vol.50, No.3, pp.897-901, 2007. DOI: 10.3938/jkps.50.897
- Y. J. Seo and K. H. Kim, "Effects of background doping concentration on electrostatic discharge protection of high voltage operating extended drain N-type MOS device," Microelectronic Engineering, Vol.84, No.1, pp.161-164, 2007. DOI: 10.1016/j.mee.2006.09.030
- J. E. Barth, K. Verhaege, L. G. Henry, and J. Richner, "TLP calibration, correlation, standards, and new techniques," IEEE Trans. Electron. Packaging Manufact., Vol.24, No.2, pp.99-108, 2001. DOI:10.1109/6104.930960
- Y. J. Seo and J. W. Yang, "Improvements of ESD Protection Performance of High Voltage Operating EDNMOS Device with DPS (Double Polarity Source) Structure," Journal of Satellite, Information and Communications, Vol.9, No.2, pp.12-17, 2014.