• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.56-56
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• 2009

In this study, we fabricated the engineered $SiO_2/Si_3N_4/SiO_2$(ONO) tunnel barrier with high-k $HfO_2$ trapping layer for application high performance flash MLC(Multi Level Cell). As a result, memory device show low operation voltage and stable memory characteristics with large memory window. Therefore, the engineered tunnel barrier with ONO stacks were useful structure would be effective method for high-integrated MLC memory applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.189-190
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• 2008

The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated. The band structure of stacked tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with that of the conventional tunneling barrier. The band-gap engineered tunneling barriers show the lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2012.05a
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• pp.527-528
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• 2012

DBD (Dielectric Barrier Discharge) plasma actuator was designed for aerodynamic drag reduction using plasma flow control, and the drag reduction was measured by wind-tunnel tests using 2D test model. At the zero wind velocity, the plasma flow control had no effect on the drag reduction because the flow separation and surface friction drag were not occurred. At the wind velocity of 2m/s, 9.7% of drag was reduced by the flow separation control. The drag reduction decreased as the wind velocity increased.

• Wind and Structures
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• v.31 no.3
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• pp.185-196
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• 2020

A method to reduce the wind pressure at the leading edge of a noise barrier was investigated by gradually lowering the height of a member added to the end of the noise barrier. The shape of the lowered height of the added member was defined by its length and slope, and the optimal variable was determined in wind tunnel testing via the boundary-layer wind profile. The goal of the optimal shape was to reduce the wind pressure at the leading edge of the noise barrier to the level suggested in the Eurocode and to maintain the base-bending moment of the added member at the same level as the noise-barrier section. Using parametric wind tunnel investigation, an added member with a slope of 1:2 that protruded 1.2 times the height of the noise barrier was proposed. This added member is expected to simplify, or at least minimize, the types of column members required to equidistantly support both added members and noise barriers, which should thereby improve the safety and construction convenience of noise-barrier structures.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2014.04a
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• pp.487-490
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• 2014

These Days a lot of Noise Complaints in vicinity of Railway has been more increase than before. Almost 1/3 Residences who lives in Railway side are Exposure to Noise Pollution. Since the Apartment Buildings around Railway are getting more higher, so those of the Noise Barrier are not best solution anymore. We are going to make a New Plane with the state of the art technology for Railway Noise Abatement Control. Our Goal are focus on a development of Light Weight Noise Tunnel designed by new absorption mat'l and tunnel Stucture on the Overbridge and Viaduct of existing Railway. New Noise Tunnel will be reducing their weight more than 30% against Road Traffic One and also 10dB(A) Noise Reduction against Noise Barrier.

• Journal of Magnetics
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• v.7 no.3
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• pp.63-71
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• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

• Journal of the Korean Magnetics Society
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• v.15 no.6
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• pp.311-314
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• 2005

We investigated the composition dependence of the tunneling magnetoresistance (TMR) behavior and the stability of the magnetic tunnel junctions (MTJs) with TiAlOx barrier and the microstructural evolution of TiAl alloy films. The TMR ratio increased up to $49\%$ at $5.33\;at\%$ Ti. In addition, a significant tunneling magnetoresistance (TMR) value of $20\%$ was maintained after annealing at $450^{\circ}C$, and the breakdown voltage ($V_B$) of and 1.35 V were obtained in the MTJ with $5.33\;at\%$ Ti-alloyed AlOx barrier. These results were closely related to the enhanced quality of the barrier material microstructure in the pre-oxidation state. Ti alloying enhanced the barrier/electrode interface uniformity and reduced microstructural defects. These structural improvements enhanced not only the TMR effect but also the thermal and electrical stability of the MTJs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.127-128
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• 2008

The electrical characteristics of VARIOT (variable oxide thickness) with various $HfO_2$ thicknesses on thin $SiO_2$ or $Al_2O_3$ layer were investigated. Especially, the charge trapping characteristics of $HfO_2$ layer were intensively studied. The thin $HfO_2$ layer has small charge trapping characteristics while the thick $HfO_2$ layer has large memory window. Therefore, the $HfO_2$ layer is superior material and can be applied to charge storage as well as tunneling barrier of the non-volatile memory applications.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.93-93
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• 2003

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.100-101
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• 2005