• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.661-664
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• 2004

In this paper, it was demonstrated that the organic thin film transistors with the organic gate insulators were fabricated by vapor deposition polymerization (VDP) processing. The configuration of OTFTs was a staggered-inverted top-contact structure and gate dielectric layer was deposited with 0.45 ${\mu}m$ thickness. In order to form polyimide as a gate insulator, VDP process was also introduced instead of spin-coating process. Polyimide film was respectively co-deposited with different materials. One was from a 4,4'-oxydiphthalic anhydride (ODPA) and 4, 4'-oxydianiline (ODA) and the other was from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and ODA. And it was also cured at 150 $^{\circ}C$ for 1 hour followed by 200 $^{\circ}C$ for 1 hour. Electrical characteristics of the organic thin-film transistors were detailed comparisons between the ODPA-ODA and the 6FDA-ODA which were used as gate insulator.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.881-884
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• 2004

The robust and large-area applicable metal shadow masks with a high aspect ratio more than 20 are fabricated by a combination of micro-electro-discharge machining (${\mu}$-EDM) and electro chemical etching (ECE). After defining S/D contacts using a 100 ${\mu}m$ thick stainless steel shadow mask, the top-contact pentacene TFTs with channel length of 5 ${\mu}m$ showed routinely the results of mobility of 0.498 ${\pm}$ 0.05 $cm^2$/Vsec, current on/off ratio of 1.6 ${times}$ $10^5$, and threshold voltage of 0 V. The straightly defined atomic force microscopy (AFM) images of channel area demonstrated that shadow effects caused by the S/D electrode deposition were negligible. The fabricated pentacene TFTs have an average channel length of 5 ${\pm}$ 0.25 ${\mu}m$.

• 동력기계공학회지
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• 제9권2호
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• pp.88-92
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• 2005

The experiment of thermal performance about closed-wet cooling tower was conducted in this study. A closed cooling tower is a device similar to a general cooling tower, but with cooling tower replaced by a heat exchanger. The test section for this experiment has the process that the cooling water flows from the top of the heat exchanger to the bottom side in the inner part of the tube, and spray water flows in the gravitational direction in the outer side. Air comes in direct contact with the spray water at the outer side of the tube while passing from the lower the upper part having a counterflow to the spray water. The heat transfer pipe used in this experiment is a bare-type tube having an outer diameter of 15.88mm. The heat exchanger is consisted of seven rows and fifteen columns. In this experiment, thermal performance of the cooling tower is derived from overall heat transfer coefficients between the process fluid and sprayed water and volumetric overall mass transfer coefficient between sprayed water and air.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.33.2-33.2
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• 2009

Block copolymer lithography has attracted great attention for emerging nanolithography since nanoscaleperiodic patterns can be easily obtained through self-assembly process without conventional top-down patterning process. Since the morphologies of self-assembled block copolymer patterns are strongly dependent on surface energy of a substrate, suitable surface modification is required. Until now, the surface modification has been studied by using random copolymer or self-assembled mono layers (SAMs). However, the research on surface modifications has been limited within several substrates such as Si-based materials. In present study, we investigated the formation of block copolymer on Au substrate by $O_2$ plasma treatment with the SAM of 3-(p-methoxy-phenyl)propyltrichloro-silane [MPTS, $CH_3OPh(CH_2)_3SiCl_3$]. After $O_2$ plasma treatment, the chemical bonding states of the surface were analyzed by X-ray photoelectron spectroscopy (XPS). The static contact angle measurement was performed to study the effects of $O_2$ plasma treatment on the formation of MPTS monolayer. The block copolymer nanotemplates formed on Au surface were analyzed by scanning electron microscopy. The results showed that the ordering of self-assembled block copolymer pattern and the formation of cylindrical nano hole arrays were enhanced dramatically by oxygen plasma treatment. Thus, the oxidation of gold surface by $O_2$ plasma treatment enables the MPTS to form the monolayer assembly leading to surface neutralization of gold substrates.

• 센서학회지
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• 제13권5호
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• pp.399-404
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• 2004

We report on the technology of formation of sandwich structures based on fullerite films and on experimental results in research of optical and conductivity properties of these sandwich samples. Single crystals of sapphire (100) or silicon were used as substrates. The sandwich specimens were based on the structure M/$C_{60}$/M (M=Cr, Pd, Ag, Al, Cu). The thickness of the fullerite films was about $0.2{\sim}1.0{\mu}m$. The area of the $C_{60}$ film under the top contact was about $1cm^{2}$. The specimens have been investigated by infrared spectroscopy, spectra-photometry, ellipsometry and X-ray diffraction analysis. Measurements of the current/voltage characteristics and research on the temperature dependence of conductivity were performed as well. It was shown that metals such as Cr, Pd, Ag, Al, and Cu penetrate easily into the fullerite films. It appears that these specimens have a large conductivity. For silver/$C_{60}$ and other sandwich structures the conductivities show a semiconductor-like behaviour.

• 한국주조공학회지
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• 제21권5호
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• pp.290-295
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• 2001

We fabricated test samples containing various shape elements and surface roughness checking points for the jewelry cast master patterns by employing the 3D computer aided design (CAD), selective laser sintering (SLS) rapid prototype (RP) with the DuraForm powders. We varied the alignment angle from $0^{\circ}$ to $10^{\circ}$ at a given layer thickness of 0.08 and 0.1mm, respectively, in RP operation. Dimensions of the shape elements as well as values of surface roughness are characterized by an optical microscope and a contact-scanning profilometer. Surface roughness values of the top and vertical face increased as the alignment angle increased, while the other roughness values and shape elements variation were not depending on the alignment angle. The resolution of the shape realization was enhanced as the layer thickness became smaller. The minimum diameter of the hole, common in jewelry design, was 1.2 mm, and the shrinkage became 12% at the 1.6 mm-diameter hole, Our results implied that we face down the proposed design elements with $0^{\circ}$ alignment angle, and consider the shrinkage effect of each shape element in DuraForm RP jewelry modeling.

• Transactions on Electrical and Electronic Materials
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• 제4권4호
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• pp.22-25
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• 2003

High series resistance due to the presence of glass frit is one of the major problems for screen printed silicon solar cells. Cells having electrical parameters below the prescribed values are usually rejected during solar module fabrication. Therefore, it is highly desirable to improve the electrical parameters of the silicon solar cells and thereby to increase the overall production yield. It was observed that, the performance of low quality mono-crystalline silicon solar cells made by standard screen printing technology could be improved remarkably by novel surface treatment. We have chemically treated the surface using sodium hydroxide (NaOH) and silver nitrate ($AgNO_3$) solutions. NaOH treatment helps to reduce the series resistance by decreasing the presence of excess glass frit on the top silver grid contact. The $AgNO_3$ treatment is used to reduce the series resistance comes from the deposition of silver on the grids by filling the holes present (if any) within the grid pattern.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.29-34
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• 2008

In this paper, we investigated electrical and physical characteristics of nickel silicide using rare-earth metals(Er, Yb, Tb, Dy), Incorporated Ytterbium into Ni-silicide is proposed to reduce work function of Ni-silicide for nickel silicided schottky barrier diode (Ni-silicided SBD). Nickel silicide makes ohmic-contact or low schottky barrier height with p-type silicon because of similar work function (${\phi}_M$) in comparison with p-type silicon. However, high schottky barrier height is formed between Ni-silicide and p-type substrate by depositing thin ytterbium layer prior to Ni deposition. Even though the ytterbium is deposited below nickel, ternary phase $Yb_xN_{1-x}iSi$ is formed at the top and inner region of Ni-silicide, which is believed to result in reduction of work function about 0.15 - 0.38 eV.

• E2M - 전기 전자와 첨단 소재
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• 제28권2호
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• pp.25-33
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• 2015

Ruthenium (Ru) thin films were grown on thermally-grown $SiO_2$ substrates by atomic layer deposition (ALD) using a sequential supply of four kinds of novel zero-valent Ru precursors, isopropyl-methylbenzene-cyclohexadiene Ru(0) (IMBCHDRu, $C_{16}H_{22}Ru$), ethylbenzen-cyclohexadiene Ru(0) (EBCHDRu, $C_{14}H_{18}Ru$), ethylbenzen-ethyl-cyclohexadiene Ru(0) (EBECHDRu, $C_{16}H_{22}Ru$), and (ethylbenzene)(1,3-butadiene)Ru(0) (EBBDRu, $C_{12}H_{16}Ru$) and molecular oxygen (O2) as a reactant at substrate temperatures ranging from 140 to $350^{\circ}C$. It was shown that little incubation cycles were observed for ALD-Ru processes using these new novel zero-valent Ru precursors, indicating of the improved nucleation as compared to the use of typical higher-valent Ru precursors such as cyclopentadienyl-based Ru (II) or ${\beta}$-diketonate Ru (III) metallorganic precursors. It was also shown that Ru nuclei were formed after very short cycles (only 3 ALD cycles) and the maximum nuclei densities were almost 2 order of magnitude higher than that obtained using higher-valent Ru precursors. The step coverage of ALD-Ru was excellent, around 100% at on a hole-type contact with an ultra-high aspect ratio (~32) and ultra-small trench with an aspect ratio of ~ 4.5 (top-opening diameter: ~ 25 nm). The developed ALD-Ru film was successfully used as a seed layer for Cu electroplating.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.151-154
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• 2004

화합물 반도체 단일 나노선의 에칭 효과를 보기 위하여 에칭 용액과 시간을 달리하면서 전류-전압 특성을 측정하였다. 측정을 위한 단일 나노선 소자는 Electron beam lithography를 이용하여 전극을 top contact 방식으로 만들었다. 에칭은 식각과정에서 현상된 상태의 패턴에서 수행하며 금속 전극과 나노선 접합 부분만을 에칭 하였다. 에칭용액은 Buffered Oxide Etchant(BOE)을 이용하였으며 에칭 시간은 수 십초에서 수 십분까지 다양하게 하였다. 전압-전류 특성 측정결과에서 에칭 용액과 에칭 시간에 따라 전류가 증가하는 것을 확인 할 수 있었다. 이러한 효과는 나노선 외곽에 비정질 산화층의 제거 효과로 인한 것으로 설명할 수 있다.