• Applied Microscopy
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• v.50
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• pp.12.1-12.11
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• 2020

Hot stage microscopy (HSM) is a thermal analysis technique that combines the best properties of thermal analysis and microscopy. HSM is rapidly gaining interest in pharmaceuticals as well as in other fields as a regular characterization technique. In pharmaceuticals HSM is used to support differential scanning calorimetry (DSC) and thermo-gravimetric analysis (TGA) observations and to detect small changes in the sample that may be missed by DSC and TGA during a thermal experiment. Study of various physical and chemical properties such sample morphology, crystalline nature, polymorphism, desolvation, miscibility, melting, solid state transitions and incompatibility between various pharmaceutical compounds can be carried out using HSM. HSM is also widely used to screen cocrystals, excipients and polymers for solid dispersions. With the advancements in research methodologies, it is now possible to use HSM in conjunction with other characterization techniques such as Fourier transform infrared spectroscopy (FTIR), DSC, Raman spectroscopy, scanning electron microscopy (SEM) which may have additional benefits over traditional characterization techniques for rapid and comprehensive solid state characterization.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.533-538
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• 2015

Thermal characterization of individual pixels in microbolometer infrared image sensors is needed for optimal design and improved performance. In this work, we used thermoreflectance microscopy on uncooled microbolometer image sensors to investigate the thermal characteristics of individual pixels. Two types of microbolometer image sensors with a shared-anchor structure were fabricated and thermally characterized at various biases and vacuum levels by measuring the temperature distribution on the surface of the microbolometers. The results show that thermoreflectance microscopy can be a useful thermal characterization tool for microbolometer image sensors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.11
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• pp.990-995
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• 2005

This paper reports the fabrication and characterization of $5\;\times\;5$ thermal cantilever array for nano-scaled memory device application. The $5\;\times\;5$ thermal cantilever array with integrated tip heater has been fabricated with MEMS technology on SOI wafer using 7 photo masking steps. All single-level cantilevers have a diode in order to eliminate any electrical cross-talk between adjacent tips. Electrical measurements of fabricated thermal cantilever away show its own thermal heating mechanism. Thermal heating is demonstrated by the reflow of coated photoresist on the cantilever array surface.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.61-65
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• 2020

Suppressing lattice thermal conductivity of thermoelectric materials is one of the most popular approach to improve their thermoelectric performance. However, accurate characterization of suppressed lattice thermal conductivity is challenging as it can only be acquired by subtracting other contributions to thermal conductivity from the total thermal conductivity. Here we explain that electronic thermal conductivity (for all materials) and bipolar thermal conductivity (for narrow band gap materials) need to be determined accurately first to characterize the lattice thermal conductivity accurately. Methods to calculate Lorenz number for electronic thermal conductivity (via single parabolic model and using a simple equation) and bipolar thermal conductivity (via two-band model) are introduced. Accurate characterization of the lattice thermal conductivity provides a powerful tool to accurately evaluate effect of different defect engineering strategies.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.1
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• pp.91-98
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• 2010

The increasing of power and processing speed and miniaturization of central processor unit (CPU) used in electronics equipment requires better performing thermal management systems. A typical thermal management package consists of thermal interfaces, heat dissipaters, and external cooling systems. There have been a number of experimental techniques and procedures for estimating thermal conductivity of thin, compressible thermal interface material (TIM). The TIM performance is affected by many factors and thus TIM should be evaluated under specified application conditions. In compact packaging of electronic equipment the chip is interfaced with a thin heat spreader. As the package is made thinner, the coupling between heat flow through TIM and that in the heat spreader becomes stronger. Thus, a TIM characterization system for considering the heat spreader effect is proposed and demonstrated in detail in this paper. The TIM test apparatus developed based on ASTM D-5470 standard for thermal interface resistance measurement of high performance TIM, including the precise measurement of changes in in-situ materials thickness. Thermal impedances are measured and compared for different directions of heat dissipation. The measurement of the TIM under the practical conditions can thus be used as the thermal criteria for the TIM selection.

• Nuclear Engineering and Technology
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• v.53 no.2
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• pp.603-610
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• 2021

The major drawback of zirconia-based materials, in view of their applications as targets for minor actinide transmutation, is their poor thermal conductivity. The addition of MgO, which has high thermal conductivity, to zirconia-based materials is expected to improve their thermal conductivity. On these grounds, the present study aims at phase characterization and thermophysical property evaluation of neodymium-substituted zirconia (Zr_0.8Nd_0.2O_1.9; using Nd₂O₃ as a surrogate for Am₂O₃) and its composites with MgO. The composite was prepared by a solid-state reaction of Zr_0.8Nd_0.2O_1.9 (synthesized by gel combustion) and commercial MgO powders at 1773 K. Phase characterization was carried out by X-ray diffraction and the microstructural investigation was performed using a scanning electron microscope equipped with energy dispersive spectroscopy. The linear thermal expansion coefficient of Zr_0.8Nd_0.2O_1.9 increases upon composite formation with MgO, which is attributed to a higher thermal expansivity of MgO. Similarly, specific heat also increases with the addition of MgO to Zr_0.8Nd_0.2O_1.9. Thermal conductivity was calculated from measured thermal diffusivity, temperature-dependent density and specific heat values. Thermal conductivity of Zr_0.8Nd_0.2O_1.9-MgO (50 wt%) composite is more than that of typical UO₂ fuel, supporting the potential of Zr_0.8Nd_0.2O_1.9-MgO composites as target materials for minor actinides transmutation.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2008.04a
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• pp.222-228
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• 2008

The chemical composition and thermal, crystal characterization of oak mushroom waste were investigated in comparison with those normal oak wood for utilization of cellulose from oak mushroom waste. The oak mushroom waste contained a higher percentage of ash, and hot water extractives than oak wood. This results indicated that the materials inside the body are easily decomposed during the oak mushroom cultivation. The lower percentage of holocellulose and a-cellulose of oak mushroom waste caused by fungal decomposition too. Whereas, the thermal decomposition behavior and crystallinity of oak mushroom waste was similar to that of normal oak wood, which indicated that the cellulose characterization of oak mushroom waste is resistant to fungal decomposition. In additionally, a degree of polymerization of oak mushroom waste must be investigate for examination of cellulose crystalline characterization, especially.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.894-900
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• 2006

This paper reports the fabrication and characterization of $32{\times}32$ thermal cantilever array for nano-scaled memory device applications. The $32{\times}32$ thermal cantilever array with integrated tip heater has been fabricated with micro-electro-mechanical systems(MEMS) technology on silicon on insulator(SOI) wafer using 9 photo masking steps. All of single-level cantilevers(1,024 bits) have a p-n junction diode in order to eliminate any electrical cross-talk between adjacent cantilevers. Nonlinear electrical characteristic of fabricated thermal cantilever shows its own thermal heating mechanism. In addition, n-channel high-voltage MOSFET device is integrated on a wafer for embedding driver circuitry.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.67-68
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• 2008

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.130.2-130
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• 2003