• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.487-487
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• 2013

According to shrinkage of transistor, interface traps have been recognized as a major factor which limits the process development in manufacturing industry. The traps occur through spontaneous generation process, and spread into the forbidden band. There is a large change of current though a few traps are existed at the Si-SiO2 interface. Moreover, the increased temperature largely affects to the leakage current due to the interface trap. For this reason, we made an effort to find out the relationship between temperature and interface trap. The subthreshold swing (SS) was investigated to confirm the correlation. The simulated results show that the sphere of influence of trap is enlarged according to increase in temperature. To investigate the relationship between thermal energy and surface potential, we extracted the average surface potential and thermal energy (kT) according to the temperature. Despite an error rate of 6.5%, change rates of both thermal energy and average surface potential resemble each other in many ways. This allows that SS is affected by the trap within the range of the thermal energy from the surface energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 방전 플라즈마 유기절연재료 초전도 자성체연구회
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• pp.11-14
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• 2004

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and AFM. Adhesion was obtained from T-peel tests of semiconductive layer having different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the the creation of O-H and C=O. It is observed that adhesion performance was determined by not surface energy but roughness level of silicone surface. It is found that ac dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.274-274
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• 2007

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2014년도 추계학술대회 논문집
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• pp.185-185
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• 2014

In this study, we investigated surface characteristics of hydroxyapatite coated surface on nano/micro pore structured Ti-35Ta-xNb alloys. This paper was focus on morphology and corrosion resistance of Anodic oxidation. To prepare the samples, Ti-35Ta-xNb (x= 0, 10 wt. %) alloys were manufactured by arc melting and heat-treated for 12 h at $1050^{\circ}C$ in Ar atmosphere at $0^{\circ}C$ water quenching. Micro-pore structured surface was performed using anodization with a DC power supply at 280 V for 3 min, nanotube formed on Ti-35Ta-xNb alloys was performed using DC power supply at 30 V in 60 min at room temperature. Surface morphology and structure were examined by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.309-309
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• 2011

There have been large research activities on the high quality oxide films for the realization oxide based electronics. However, the interface interdiffusion prohibits achieving high quality oxide films, when the oxide films are grown on non-oxide substrates. In the case of Si substrates, there exist lattice mismatch and interface interdiffusion when oxide films deposited on direct Si surface. In this presentation, we report the interface characteristics of yttria-stabilized zirconia films grown on silicon substrates. From x-ray reflectivity analysis we found that the film thickness and interface roughness decreased as the growth temperature increased, indicating that the growth mechanism varies and the chemical reaction is limited to the interface as the growth condition varies. Furthermore, the packing density of the film increased as the growth temperature increased and the film thickness decreased. X-ray photoelectron spectroscopy analysis of very thin films revealed that the amount of chemical shift increased as the growth temperature increased. Intriguingly, the direction of the chemical shift of Zr was opposite to that of Si due to the second nearest neighbor interaction.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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• pp.102-102
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• 2011

• 한국표면공학회지
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• 제30권6호
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• pp.374-381
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• 1997

We have studied the effect of the interface between tungsten silicide and polysilicon the silicide reaction. The results showed that the cleaning of the silicon surface prior to the deposition of tungsten silicide affected the interface properties, thereby leading to the difference in the resistivity and surface morhpology of tungsten silicide. Compared with HF cleaning, the use of SCl cleaning yielded higher resistivity of tungsten silicide at the low anneal temperature (up to $900^{\circ}C$). However, furtherature to $1000^{\circ}C$ reduced the resistivity significantly, similar to that obtained with HF cleaning. It was also observed that the annealing of WSix/HF-cleaned poly-si allowed the formation of bucking weve (partially decohesion area) on the surface. In contrast, the use of SCl celaning did not produce the buckling waves on the surface. Also the presence of 200$\AA$ -thick TiW between tungsten silicide and HF-cleaned poly-Si effectively prevented the formation of the waves. However, high-temperature annealing of WSix/200A-TiW/Poly-Si allowed the excess silicon in tungsten silicide to precipitate inside the silcide, causing the slight increase of the resistivity after annealing at $1050^{\circ}C$.

• 한국지반공학회논문집
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• 제38권2호
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• pp.29-38
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• 2022

마찰 방향에 따른 전단 저항의 이방성을 지반 구조물에서 선택적으로 이용할 수가 있다. 예를 들어서, 축방향으로 하중을 가하는 깊은 기초, 소일 네일링, 타이백 등은 큰 전단 저항이 유발되므로 하중 전달 능력을 증가시키지만, 이와 반대로 말뚝 관입과 흙 시료 채취 등은 최소화된 전단 저항만 유발된다. 기존 연구는 뱀 비늘의 기하학적 형상과 유사한 표면 돌출부를 갖는 플레이트와 흙 경계면에서 유발되는 전단 저항 변화를 확인하였다. 본 논문에서는 표면 돌출부의 형상에 따른 경계면 마찰각의 변화를 정량적으로 평가하였다. 수정된 직접 전단 시험기를 이용하여 상대 밀도가 40%로 조성된 모래 시료에 대해 9개의 플레이트, 2개의 전단 방향(전단 시 돌출부 높이가 증가와 감소하는 방향), 그리고 3개의 초기 수직 응력(100kPa, 200kPa, 300kPa) 조건으로 총 51가지 경우를 실험 하였다. 실험 결과, 전단 응력은 돌출부 높이가 높을수록, 돌출부 길이가 짧을수록, 돌출부 높이가 증가하는 전단 방향에서 크게 나타났다.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.450-456
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• 2005

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C=O. It is observed that adhesion performance was determined by surface energy and roughness level of silicone surface. It is found that at dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.

• 한국세라믹학회지
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• 제30권11호
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• pp.933-940
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• 1993

SO42-/Al2O3 powder was prepared by the coprecipitation method from the Al(NO3)3.9H2O and NH4OH and followed by being treated with various concentrations of sulfuric acid. The characterization of these powders was performed with XRD, BET and FT-IR. The surface charge density at alumina/KCl(aq) interface was measured by potentiometric titration method. From the experimental data it was shown that acid strength, specfic surface area, and structure of surface treated alumina were independent on the amount of exchanged SO42-. However, the acid amounts of alumina were increased with the amounts of SO42- formed on alumina surface. The relation between the acid amount of SO42- ion exchanged alumina surface and the surface charge density for SO42-/Al2O3/KCl(aq) interface was investigated.