Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2004.05b
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- Pages.11-14
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- 2004
Adhesion and Electrical Performance by Plasma Treatment on Semiconductive-Insulation Interface Layer of Silicone Rubber
실리콘 고무의 플라즈마 표면처리된 반도전-절연계면 처리에 따른 접착특성과 절연성능
- Hwang, Sun-Mook (Inha University) ;
- Lee, Ki-Taek (Inha University) ;
- Hong, Joo-Il (Inha University) ;
- Huh, Chang-Su (Inha University)
- Published : 2004.05.21
Abstract
In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and AFM. Adhesion was obtained from T-peel tests of semiconductive layer having different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the the creation of O-H and C=O. It is observed that adhesion performance was determined by not surface energy but roughness level of silicone surface. It is found that ac dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.