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Adhesion and Electrical Performance by Plasma Treatment of Semiconductive Silicone Rubber

반도전성 실리콘 고무의 플라즈마 표면처리에 따른 접착특성과 절연성능

  • Published : 2005.05.01

Abstract

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. The modifications produced on the silicone surface by oxygen plasma were accessed using ATR-FTIR, contact angle and Surface Roughness Tester. Adhesion was obtained from T-peel tests of semiconductive layer haying different treatment durations. In addition, ac breakdown test was carried out for elucidating the change of electrical property with duration of plasma treatment. From the results, the treatment in the oxygen plasma produced a noticeable increase in surface energy, which can be mainly ascribed to the creation of O-H and C=O. It is observed that adhesion performance was determined by surface energy and roughness level of silicone surface. It is found that at dielectric strength was increased with improving the adhesion between the semiconductive and insulating interface.

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References

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