• Journal of Physiology & Pathology in Korean Medicine
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• v.32 no.1
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• pp.35-42
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• 2018

TRPA1 and TRPV1 are members of the TRP superfamily of structurally related, nonselective cation channels. TRPA1 and TRPV1 are often co-expressed in sensory neurons and play an important role in mechanical hyperalgesia and allodynia during neuropathic pain. Scutellariae Radix was reported to possess anti-inflammation properties and similar patterns of therapeutic action against different diseases. also Baicalin(a known principal constituent of Scutellaria Radix) was shown to down-regulate the mRNA expression levels of TRPV1. In this study, we observed the effects of Scutellariae Radix extract(SRE) in neuropathic pain induced SD rats via modulation of TRPV1 and TRPA1. Oral administration of a Scutellaria Radix extract(in doses of 300mg/kg, SRE(300)) showed a meaningful increase in the withdrawal threshold of mechanical allodynia and showed a meaningful decrease in the expression of c-fos compared to the control group. SRE(100) and SRE(300) showed a meaningful decrease in the expression of TRPV1 level compared to the control group. These results suggest that Scutellariae Radix extract could decrease mechanical allodynia by down-regulate the TRPV1 on the model of neuropathic pain.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.169-172
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• 2004

Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ～ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

• ETRI Journal
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• v.31 no.6
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• pp.660-666
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• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• Journal of Periodontal and Implant Science
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• v.26 no.2
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• pp.522-530
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• 1996

Most dentists are very interested in laser therapy on the intraoral soft tissue lesions because they want to accomplish the analgesic and aseptic surgery with little or no bleeding. In order to determine the difference of pain threshold according to different gingival tissues with or without inflammation, 25 patients with inflammatory periodontal disease and 10 volunteers with good general and oral health were selected as the inflamed group and the normal group, respectively. Interdental papilla, marginal gingiva, attached gingiva, and alveolar mucosa were irradiated by the contact delivery($300{\mu]m$ fiber optic, for 5 seconds) of a pulsed Nd:YAG laser(EN.EL.EN06O, Italy). And the laser power was gradually increased from 0.5W by the increment of 0.1W. The highest laser power was recorded as the first painful power when the painful gesture was recognized at first. The difference of the first painful power of laser according to different gingival tissues with or without inflammation was statistically analyzed by paired t-test in MICROSTAT program. Following results were obtained: 1. In the comparison related with the inflammation, the first painful power was significantly lower in the inflamed group than in the normal group, regardless of interdental papilla and marginal gingiva(p<0.05). 2. In the comparison related with the tissue structure, the first painful. power was significantly lower in alveolar mucosa than in attached gingiva(p<0.05). The results suggest that, for the painless therapy by a pulsed-Nd:YAG laser irradiation, the laser surgery over 2.0W of power should be necessarily accomplished under the local anethesia, and the local anesthesia should be considered according to the degree of inflammation, the tissue structure, and the purpose of laser therapy.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.1
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• pp.1-10
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• 2003

Device characteristics of the Metal-Ferroclecric-Semiconductor FET(MFSFET) are simulated in this study. The field-dependent polarization model and the square-law FET model are employed in our simulation. C-V$_{G}$ curves generated from our MFSFET simulation exhibit the accumulation, the depletion and the inversion regions clearly. The capacitance, the subthreshold and the drain current characteristics as a function of gate bias exhibit the memory windows are 1 and 2 V, when the coercive voltages of ferroelectric are 0.5 and 1 V respectively. I$_{D}$-V$_{D}$ curves are composed of the triode and the saturation regions. The difference of saturation drain currents of the MFSFET device at the dual threshold voltages in I$_{D}$-V$_{D}$ curve is 1.5, 2.7, 4.0, and 5.7 ㎃, when the gate biases are 0, 0.1, 0.2 and 0.3V respectively. As the drain current is demonstrated after time delay, PLZT(10/30/70) thin film shows excellent reliability as well as the decrease of saturation current is about 18 % after 10 years. Our simulation model is expected to be very useful in the estimation of the behaviour of MFSFET devices.T devices.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.36S no.7
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• pp.104-115
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• 1999

This paper proposes an efficient method for 3D modeling of a human face from trinocular images by reconstructing face surface using range data. By using a trinocular camera system, we mitigated the tradeoff between the occlusion problem and the range resolution limitation which is the critical limitation in binocular camera system. We also propose an MPC_MBS (Matching Pixel Count Multiple Baseline Stereo) area-based matching method to reduce boundary overreach phenomenon and to improve both of accuracy and precision in matching. In this method, the computing time can be reduced significantly by removing the redundancies. In the model generation sub-pixel accurate surface data are achieved by 2D interpolation of disparity values, and are sampled to make regular triangular meshes. The data size of the triangular mesh model can be controlled by merging the vertices that lie on the same plane within user defined error threshold.

• Journal of the Korean Society for Aviation and Aeronautics
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• v.13 no.3
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• pp.43-60
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• 2005

In september 2004, a new pilot certificate scheme referred to as Sport Pilot Certificate was declared official and standardized in the US. The designation of Light-sport aircraft and the details of the relevant pilot certificate policy was announced out of the perception that a new regulation is required to be applied whereby the limitations on the manufacturing process enhancements and current aviation rules are considered the triggering factors. US Federal Aviation Regulation retains a comprehensive range of airworthiness certificates and aircrafts are managed systematically in accordance with FAR 21, 103. The airworthiness are further segregated into sub categories, which allows differentiated management. Korean Aviation Law classify aircraft into five different categories and powered air vehicle that weighs more than 150kg(19liters fuel capacity) for one seat, 225kg for two seats(38liters fuel capacity) while the systems that fall under a specific mass threshold level are known as ultralight vehicle. The research discusses the policy of the sport pilot certificate and the light-sport aircraft ratings announced official by the Federal Aviation Administration in an intuitive fashion with the analysis of the operations providing the evidence as to the viability of adopting the policy in local grounds. Based on the findings, the report discusses the case for introducing the light-sport aircraft and make recommendation on a strategy of applying the policy in Korea with respect to the pilot certificates, safety agenda, and the written test for the pilot certificate, and operating efficiency.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.21-25
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• 2009

The organic-inorganic thin film transistors (OITFTs) with ZnO channel layer and the cross-linked PVP (Poly-4-vinylphenol) gate insulator were fabricated on the patterned ITO gate/glass substrate. ZnO channel layer was deposited by using atomic layer deposition (ALD). In order to improve the electrical properties, $O_2$ plasma treatment onto PVP film was introduced and investigated the effect of the plasma treatments on the electrical properties of the OITFTs. The field effect mobility and sub-threshold slope (SS) values of the OITFT decreased slightly from 0.24 to 0.16 $cm^2/V{\cdot}s$ and from 9.7 to 9.2 V/dec, respectively with increasing RF power from 30 to 50 Watt. The $I_{on/off}$ ratio was about $10^3$ for all samples with $O_2$ plasma treatment.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38B no.9
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• pp.728-735
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• 2013

In this paper, we present a method of transmitting ECG signals in real-time mobile environment to be possible to implement the ubiquitous healthcare system. Because of the excessive amount of data transmission of ECG signals, it is necessary to propose a limitation to the real-time transmission. We propose a real-time electrocardiographic monitoring system based on the proposal of unusual waveform detection algorithm which detects the R-wave distortions from the arrhythmia ECG signals having unusual waveform of about 10% on average. It is very effective in terms of time and cost for medical staffs to monitor and analyze ECG signals for a long period of time. Monitoring unusual waveform by gradually adjusting the threshold values of potential and kurtosis makes the amount of data transmitted decrease and significance level of waveform to be enhanced. The unusual waveform detection algorithm is implemented with ubiquitous environment inter-working device client. It is applicable to ubiquitous healthcare system capable of real-time monitoring the ECG signal. While ensuring the mobility, it allows for real-time continuous monitoring of ECG signals.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.99-100
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• 2006

Silicon-on-insulator(SOI) MOSFET with SiGe/Si heterostructure channel is an attractive device due to its potent use for relaxing several limits of CMOS scaling, as well as because of high electron and hole mobility and low power dissipation operation and compatibility with Si CMOS standard processing. SOI technology is known as a possible solution for the problems of premature drain breakdown, hot carrier effects, and threshold voltage roll-off issues in sub-deca nano-scale devices. For the forthcoming generations, the combination of SiGe heterostructures and SOI can be the optimum structure, so that we have developed SOI n-MOSFETs with SiGe/Si heterostructure channel grown by reduced pressure chemical vapor deposition. The SOI n-MOSFETs with a SiGe/Si heterostructure are presented and their DC characteristics are discussed in terms of device structure and fabrication technology.