Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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Dependence of $O_2$ Plasma Treatment of Cross-Linked PVP Insulator on the Electrical Properties of Organic-Inorganic Thin Film Transistors with ZnO Channel Layer

  • Gong, Su-Cheol (Department of Electronics and Computer Engineering, Dankook University) ;
  • Shin, Ik-Sup (Department of Electronics and Computer Engineering, Dankook University) ;
  • Bang, Suk-Hwan (Division of Materials Science and Engineering, Hanyang University) ;
  • Kim, Hyun-Chul (Department of Materials Science and Engineering, Yonsei University) ;
  • Ryu, Sang-Ouk (Department of Electronics and Computer Engineering, Dankook University) ;
  • Jeon, Hyeong-Tag (Division of Materials Science and Engineering, Hanyang University) ;
  • Park, Hyung-Ho (Department of Materials Science and Engineering, Yonsei University) ;
  • Yu, Chong-Hee (Electronics and Telecommunications Research Institute) ;
  • Chang, Ho-Jung (Department of Electronics and Computer Engineering, Dankook University)
  • Published : 2009.06.30
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Abstract

The organic-inorganic thin film transistors (OITFTs) with ZnO channel layer and the cross-linked PVP (Poly-4-vinylphenol) gate insulator were fabricated on the patterned ITO gate/glass substrate. ZnO channel layer was deposited by using atomic layer deposition (ALD). In order to improve the electrical properties, $O_2$ plasma treatment onto PVP film was introduced and investigated the effect of the plasma treatments on the electrical properties of the OITFTs. The field effect mobility and sub-threshold slope (SS) values of the OITFT decreased slightly from 0.24 to 0.16 $cm^2/V{\cdot}s$ and from 9.7 to 9.2 V/dec, respectively with increasing RF power from 30 to 50 Watt. The $I_{on/off}$ ratio was about $10^3$ for all samples with $O_2$ plasma treatment.

Keywords

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