참고문헌
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피인용 문헌
- Transparent Flexible Zinc-Indium-Tin Oxide Thin-Film Transistors Fabricated on Polyarylate Films vol.49, pp.5, 2009, https://doi.org/10.1143/jjap.49.05eb10
- Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors vol.29, pp.4, 2009, https://doi.org/10.1116/1.3609254
- Electrical properties of top-gate oxide thin-film transistors with double-channel layers vol.326, pp.1, 2011, https://doi.org/10.1016/j.jcrysgro.2011.01.094
- A Study of the Surface Chemical Reactions on IGZO Thin Film in BCl3/Ar Inductively Coupled Plasma vol.159, pp.4, 2009, https://doi.org/10.1149/2.034204jes
- Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors vol.34, pp.6, 2009, https://doi.org/10.4218/etrij.12.0212.0232
- Double-layered passivation film structure of Al2O3/SiNx for high mobility oxide thin film transistors vol.31, pp.2, 2009, https://doi.org/10.1116/1.4789423
- Bias-stability improvement using Al2O3 interfacial dielectrics in a-InSnZnO thin-film transistors vol.28, pp.8, 2009, https://doi.org/10.1088/0268-1242/28/8/085015
- Dry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma vol.14, pp.4, 2013, https://doi.org/10.4313/teem.2013.14.4.216
- Negative-Bias Light Stress Instability Mechanisms of the Oxide-Semiconductor Thin-Film Transistors Using In–Ga-O Channel Layers Deposited With Different Oxygen Partial Pressures vol.61, pp.1, 2009, https://doi.org/10.1109/ted.2013.2288264
- Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability (5 pages) vol.104, pp.25, 2009, https://doi.org/10.1063/1.4885362
- Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer vol.6, pp.None, 2016, https://doi.org/10.1038/srep37764