• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.89-94
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• 2007

For successful implementation of multi-standard transmitter, reconfigurable architecture and component design are essential. This paper presents a reconfigurable CMOS power amplifier designed CMOS 0.25 um process. Designed power amplifier can be operated at 0.9, 1.2, 1.75, and 1.85 GHz. Also, it can be used at 2.4 GHz by using bonding wire inductor. The interstage matching network is composed of two inductors and four switches, and operation frequency can be varied by controlling switches. Proposed power amplifier can be used as a power amplifier in low power applications such as ZigBee or Bluetooth application and used as a driver amplifier in high power application such as CDMA application. Designed power amplifier has 18.2 dB gain and 10.3 dBm output power at 0.9 GHz. Also, it represented 10.3 (18.1) dB gain and 5.2 (10) dBm output power at 1.75 (2.4) GHz.

• Proceedings of the KIEE Conference
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• 1985.07a
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• pp.224-227
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• 1985

During operation of an RF glow discharge system, it can be observed that the reflected power tends to increase in small value, due to changes in the impedance of the system. This problem can be relieved by adding an automatic impedance matching circuit to the system. This paper presents a detailed method of automatically matching the input impedance of a 50 ohm transmission line to an RF glow discharge system at 13.56 MHZ.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1844-1845
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• 2007

A CUSUM control chart was used to monitor semiconductor plasma equipment. The performance of plasma monitoring was evaluated with various combinations of design variables involved in CUCUM control chart. Experimental data collected by using a real-time matching monitoring system include electrical positions of impedance and phase positions, and reflected power. The evaluation revealed that by determining specific design variables plasma states could be more strictly monitored.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.46 no.1
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• pp.102-106
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• 2009

This paper presents the design and optimization of output matching network according to envelope for class F power amplifier(PA) which is to apply to envelope elimination and restoration(EER) transmitter. In this paper, to increase the PAE of class F power amplifier which applies to EER transmitter, the varactor diode has been used on output matching network. As envelope changes, it optimizes constitution of harmonic trap that is short circuit in 2nd-harmonic and is open circuit in 3rd-harmonic. When drain voltage changes from 25 V to 30 V, some percentage is improved in the PAE.put the abstract of paper here.

• Journal of electromagnetic engineering and science
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• v.7 no.4
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• pp.147-153
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• 2007

This paper represents an analog predistortion linearizer for the high power amplifier with low memory effect. The high power amplifier is implemented using a 90-W peak envelope power(PEP) LDMOSFET at 2.14-GHz and an envelope short matching topology is applied at the active ports to minimize the memory effect. The analog predistortion circuit comprises the fundamental path and the cuber and quintic generating circuits, whose amplitudes and phases can be controlled independently. The predistortion circuit is tested for two-tone and wide-band code division multiple access(WCDMA) 4FA signals. For the WCDMA signal, the adjacent channel leakage ratios(ACLRs) at 5 MHz offset are improved by 12.4 dB at average output powers of 36 dBm and 42 dBm.

• Journal of the Semiconductor & Display Technology
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• v.15 no.2
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• pp.6-10
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• 2016

In RF plasma processing, when the plasma is generated, there is the difference of impedance between RF generator and plasma source. Its difference is normally reduced by using the matcher and the RF power is transferred efficiently from the power generator to the plasma source. The generated plasma has source impedance that it can be changed during processing by pressure, frequency, density and so on. If the range of source impedance excesses the matching range of the matcher, it cannot match all value of the impedance. In this research, we studied the elevation mechanism of the RF power delivery efficiency between RF generator to the plasma source by using the transmission line and impedance tuning of the plasma source. We focus on two plasma sources (capacitive coupled plasma (CCP), inductive coupled plasma (ICP)) which is most widely used in industry recently.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2002.11a
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• pp.15-18
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• 2002

Power supply technique for electrodeless lamps, especially Endura of Osram, is presented in this paper. The power supply uses a conventional power factor correction technique due to its proved performance. But in the inverter stage, resonant converter with parallel loading scheme is used to mitigate the variation of matching circuit characteristics by time varying load. Less performance but sufficient to predict future success compared to Osram's one is verified as a result of experiment of the prototype.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.11a
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• pp.13-16
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• 2004

Power supply technique for electrodeless lamps is presented in this paper. The power supply uses a conventional power factor correction technique due to its proved performance. But in the inverter stage, resonant converter with parallel loading scheme is used to mitigate the variation of matching circuit characteristics by time varying load. Experiment and performance comparison for both Endura md QL are performed and further study to commercialization are discussed.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.135-138
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• 1999

In this paper, we designed each matching networks by given input and output impedances of power amplifiers. Mearsured results for IMD and gain flatness are -30㏈c and $\pm$0.2㏈ with 38㏈m output power PEP of PTE10119 at 2.10-2.20㎓ and are -30㏈c and $\pm$0.4㏈ with 42㏈m output power PEP of MRF284 at same frequency range.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.1
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• pp.117-122
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• 2016

In this paper, we propose 24-GHz CMOS radio frequency (RF) power amplifier for short-range automotive collision avoidance radars. This circuit contains common source stage with inter-stages conjugate matching circuit as a class-A mode amplifier. The proposed circuit is designed using TSMC $0.13-{\mu}m$ mixed signal/RF CMOS process ($f_T/f_{MAX}=120/140GHz$). It operates at the supply voltage of 2V, and it is designed to have high power gain, low insertion loss and low noise figure in the low supply voltage. To reduce total chip area, the circuit used transmission lines instead of the bulky real inductor. The designed CMOS power amplifier showed the smallest chip size of $0.1mm^2$, the lowest power consumption of 40mW, the highest power gain of 26.5dB, the highest saturated output power of 19.2dBm and the highest maximum power-added efficiency of 17.2% as compared to recently reported results.