• Corrosion Science and Technology
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• v.12 no.1
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• pp.34-39
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• 2013

In this study, the effect of niobium addition on the passivation behavior of Ti alloys in NaCl solution was investigated using various electrochemical methods. An ${\alpha}$-phase in Ti alloy was transformed into a ${\beta}$-phase and martensite structure decreased as Nb content increased. The corrosion and passivation current density($+300mV_{SCE}$) decreased as Nb content increased, and thereby a stable passive film was formed on the Ti alloy. Potential of Ti-xNb alloy in the passive region increased, whereas, current density decreased with time from results of potentiostatic and galvanostatic tests. Also, the corrosion morphology showed the smaller pits as Nb content increased. Consequently, Ti alloy contained high Nb content showed a good resistance to pitting corrosion in 0.9% NaCl solution.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.2
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• pp.90-96
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• 1985

The properties of plasma-enhanced CVD phosphorous silicate glass (PECVD PSG) for passivation layer are studied . Phosphorous contentration was analyzed with X-ray fluores-cence. As a result, PECVD PSG has a limiting phosphors concentration of about 8 mole%. Curves relating to etcll rate, infrared absorption ratio, and sheet resistivity were adapted to monitor phosphorous concentration indirectly Dielectric properties, step coverage, crack resistance, and gettering effect are discussed in both of atmospheric pressure CVD (APCVO) and PECVD oxide. PECVD SiO2 film have density of about 2.4 g/㎤ at deposition rate of 450$\AA$/min, refractive index of about 1.53, and breakdown at fields of II-13 MV/cm. Crack resistance of PECVD oxide is greater than APCVD oxide. PECVD PSG films contained with 2 mole % phosphorous show good step coverage and gettering ability. The obtained results show more advantages in PECVD PSG than in APCVD PSG for device passivation.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1310-1312
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• 2005

Passivation of organic thin-film transistors (OTFTs) using organic and metal thin-film was presented. Parylene-C and titanium were used as an organic and metal layer, respectively. With the proposed passivation method the degradation of electric parameters of OTFTs was relieved compared with non-passivated devices. Several electric parameters such as on/off current, field-effect mobility, and threshold voltage were shown.

• Journal of the Korean Electrochemical Society
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• v.10 no.1
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• pp.14-19
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• 2007

The corrosion and passivation of copper was investigated with the copper rotating disk electrode(Cu-RDE) in borate buffer solution. It has been observed with the mixed potential theory that the corrosion potential for the rotation rate increase under the convective diffusion condition was increased. It was suggested that the chemical intermediates and product 13. the copper oxidation were $Cu(OH)_{ads},\;{Cu(OH)_2}^-,\;Cu_2O,\;Cu(OH)_2,\;and\;CuO$.

• Current Photovoltaic Research
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• v.7 no.1
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• pp.15-20
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• 2019

Most high-efficiency n-type silicon solar cells are based on the high quality surface passivation and ohmic contact between the emitter and the metal. Currently, various metalization methods such as screen printing using metal paste and physical vapor deposition are being used in forming electrodes of n-type silicon solar cell. In this paper, we analyzed the degradation factors induced by the front electrode formation process using e-beam evaporation of double passivation structure of p-type emitter and $Al_2O_3/SiN_x$ for high efficiency solar cell using n-type bulk silicon. In order to confirm the cause of the degradation, the passivation characteristics of each electrode region were determined through a quasi-steady-state photo-conductance (QSSPC).

• Journal of the Korean Chemical Society
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• v.26 no.6
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• pp.369-377
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• 1982

The technique of combined-measurement of reflectance and ellipsometric parameters was used for studying the anodic film formed on nickel surface in basic solutions. An ellipsometer was automated for transient measurements by way of modulating the plane-polarized light with the Faraday effect. Surface film was formed electrochemically by applying a potential step from the reduction potential range to the passivation range on a polished, high-purity, polycrystalline nickel specimen. From that instant, the changes in the reflectance(r) and the ellipsometric parameters(${\Delta},{\Psi}$) of the surface film were recorded by the automatic ellipsometer. Three exact simultaneous equations including these optical signals, ${\Delta},{\Psi}$ and r were solved numerically with a computer in order to determine the optical properties, n, k, and the thickness, ${\tau}$, of the surface film. From the computed results which showed dependence on pH and time, it was found that passivation of nickel can be effectively attained by surface film thinner than $15{\AA}$ and this passivation film has a small optical absorption coefficient. It seemed that a high pH environment enhances the rate of passivation and is favorable for a denser structure of the surface film. The experimental evidence is in accordance with the hypothesis that the composition of the passive film can be approximated by $Ni(OH)_2$ in the early stage of passivation and that as time passes the composition changes partially toward that of NiO through dehydration.

• Current Photovoltaic Research
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• v.7 no.4
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• pp.125-129
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• 2019

Recently, carrier-selective contact solar cells have attracted much interests because of its high efficiency with low recombination current density. In this study, we investigated the effect of phosphorus doped amorphous silicon layer's characteristics on the passivation properties of tunnel oxide passivated carrier-selective contact solar cells. We fabricated symmetric structure sample with poly-Si/SiOx/c-Si by deposition of phosphorus doped amorphous silicon layer on the silicon oxide with subsequent annealing and hydrogenation process. We varied deposition temperature, deposition thickness, and annealing conditions, and blistering, lifetime and passivation quality was evaluated. The result showed that blistering can be controlled by deposition temperature, and passivation quality can be improved by controlling annealing conditions. Finally, we achieved blistering-free electron carrier-selective contact with 730mV of i-Voc, and cell-like structure consisted of front boron emitter and rear passivated contact showed 682mV i-Voc.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.13-20
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• 2003

Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.732-734
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• 1998

Metal thin films such as aluminum have been used as interconnects in semiconductor device. Recently, these materials are applied to structural materials in microsensors and microactuators. In this study, we evaluate deformation and strength behavior of aluminum alloy film. Three layer model for thermal deformation of multilayered thin film material is introduced and applied to Si/Al(1%Si)/$SiO_2$ system. Based on beam bending theory and concept of bending strain. elastic and elastic/plastic thermal deformation behaviors of multilayered materials can be estimated. In the case of plastic deformation of ductile layer, strain rate equations based on deformation mechanism map are employed for describe the stress relaxation effect. To experimentally examine deformation of multilayered thin film materials, in-situ laser scanning method is used to measure curvature of specimens during heating and cooling. The thickness of $SiO_2$ layer is varied to estimate third-layer effect of thermal deformation of metal films, and its effect on deformation behavior are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1033-1036
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• 2004

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.