한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
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Triple Layer Passivation for Organic Thin-Film Transistors

  • Ryoo, Ki-Hyun (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Cheon-An (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Jin, Sung-Hun (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Jung, Keum-Dong (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Park, Chang-Bum (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Lee, Jong-Duk (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Shin, Hyung-Cheol (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University) ;
  • Park, Byung-Gook (Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University)
  • Published : 2005.07.19
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Abstract

Passivation of organic thin-film transistors (OTFTs) using organic and metal thin-film was presented. Parylene-C and titanium were used as an organic and metal layer, respectively. With the proposed passivation method the degradation of electric parameters of OTFTs was relieved compared with non-passivated devices. Several electric parameters such as on/off current, field-effect mobility, and threshold voltage were shown.

Keywords