JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Progress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors

  • Abernathy, C.R. (Department of Materials Science and Engineering, University of Florida) ;
  • Gila, B.P. (Department of Materials Science and Engineering, University of Florida) ;
  • Onstine, A.H. (Department of Materials Science and Engineering, University of Florida) ;
  • Pearton, S.J. (Department of Materials Science and Engineering, University of Florida) ;
  • Kim, Ji-Hyun (Department of Chemical Engineering, University of Florida) ;
  • Luo, B. (Department of Chemical Engineering, University of Florida) ;
  • Mehandru, R. (Department of Chemical Engineering, University of Florida) ;
  • Ren, F. (Department of Chemical Engineering, University of Florida) ;
  • Gillespie, J.K. (Air Force Research Laboratory Wright-Patterson Air Force Base) ;
  • Fitch, R.C. (Toyota Central Research and Development Laboratories, Inc.) ;
  • Seweel, J. ;
  • Dettmer, R. ;
  • Via, G.D. ;
  • Crespo, A. ;
  • Jenkins, T.J. ;
  • Irokawa, Y.
  • Published : 2003.03.01
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Abstract

Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

Keywords

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