JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Effect on 4H-SiC Schottky Rectifiers of Ar Discharges Generated in A Planar Inductively Coupled Plasma Source

  • Jung, P.G. (Department of Optical Engineering, Inje University) ;
  • Lim, W.T. (Department of Optical Engineering, Inje University) ;
  • Cho, G.S. (Department of Optical Engineering, Inje University) ;
  • Jeon, M.H. (Department of Optical Engineering, Inje University) ;
  • Lee, J.W. (Department of Optical Engineering, Inje University) ;
  • Nigam, S. (Department of Chemical Engineering University of Florida) ;
  • Ren, F. (Department of Chemical Engineering University of Florida) ;
  • Chung, G.Y. (Sterling Semiconductor) ;
  • Macmillan, M.F. (Sterling Semiconductor) ;
  • Pearton, S.J. (Department of Materials Sciences and Engineering University of Florida)
  • Published : 2003.03.01
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Abstract

4H-SiC Schottky rectifiers were exposed to pure Ar discharges in a planar coil Inductively Coupled Plasma system, as a function of source power, of chuck power and process pressure. The reverse breakdown voltage ($V_B$) decreased as a result of plasma exposure due to the creation of surface defects associated with the ion bombardment. The magnitude of the decrease was a function of both ion flux and ion energy. The forward turn-on voltage ($V_F$), on-state resistance ($R_{ON}$) and diode ideality factor (n) all increased after plasma exposure. The changes in all of the rectifier parameters were minimized at low power, high pressure plasma conditions.

Keywords

References

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