• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.182-185
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• 2002

A RE predistorted asymmetric Doherty amplifier for CDMA IS-95 signal has been fabricated using GaAs FETs. The Doherty amplifier used a Class AB main device and a Class C auxiliary device. At 6 ㏈ back-of from Pl ㏈ of 34 ㏈m, PAE of 27% was measured. This Doherty amplifier has higher PAE than Class AB for over 20 dB range of pout power. A RF predistortion linearizer is applied to the Doherty amplifier to improve the IMD cancellation performance. The 3rd order IMD cancellation of 12.2 ㏈ was achieved at output power of 18 ㏈m.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.12B
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• pp.1754-1757
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• 2001

In this paper, a R-band hybrid amplifier with the coplanar waveguide(CPW) and the photonic bandgap(PBG) structure is designed and fabricated. The PBG and the CPW techniques are simultaneously employed in amplifier to improve the power added efficiency(PAE) and the IMD(Intermodulation Distortion) in R-band. In this paper, the PBG structures are optimized to obtain matching network. The output impedance of amplifier and the input impedance of PBG are matched to minimize the return loss. The PAE and the IMD were improved 15% and 4.5dB compared with the conventional amplifier, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.10B
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• pp.1701-1706
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• 2000

In this work a 38 GHz hybrid 2-stage power amplifier module using GaAs pHEMTs and waveguide to microstrip transitions has been successfully developed. A 10 mil thickness duroid substrate was use for fabrication of the power amplifier and the waveguide to microstrip transitions. The fabricated waveguide to microstrip transition showed about 1 dB insertion loss(back to back) at 32-40 GHz. The measured results of power amplifier module showed 29 dBm output power(P1.5dB), 7,2 dB associated gain and 11.2% power-added efficiency(PAE) at 36.8-38.5 GHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.6
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• pp.287-290
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• 2006

A class-E CMOS RF(Radio frequency) power amplifier with a 1.8 Volt power supply is designed using $0.25{\mu}m$ standard CMOS technology. To drive the class-E power amplifier, a Class-F RF power amplifier is used and the reliability characteristics are studied with a class-E load network. After one year of operating the power amplifier with an RF choke, the PAE(Power Added Efficiency) decreases from 60% to 47% and the output power decreases 29%. However, when a finite DC-feed inductor is used with the load, the PAE decreases from 60% to 53% and the output power decreases only 19%. The simulated results demonstrate that the class-E power amplifier with a finite DC-feed inductor exhibits superior reliability characteristics.

• International Journal of Reliability and Applications
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• v.11 no.2
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• pp.139-151
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• 2010

The main objective of this study is to present a new approach to obtain moment inequalities for the new better than renewal used (NBRU) class of life distributions. In order to achieve our main objective, the moment inequalities for NBRU class of life distribution using the new approach has been derived and then a new test for testing exponentiality against NBRU class based on these inequalities has been constructed. Then we calculate the Pitman asymptotic efficiency for the proposed test using some alternative distributions and comparing it with the other tests. Moreover, we make a comparison between Pittman asymptotic efficiencies (PAE's) and PAE's of some other tests. A simulation study is conducted to calculate the upper critical values and the power estimate of the proposed test for some common alternatives. Finally, we apply the suggested test to some real data.

• International Journal of Reliability and Applications
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• v.8 no.1
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• pp.27-39
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• 2007

Based on goodness of fit new testing procedures are derived for testing exponentiality against harmonic new renewal better than used in expectation (HNRBUE). For this aging properties, a nonparametric procedure (U-statistic) is proposed. The percentiles of this test statistic are tabulated for sample sizes n=5(1)30(10)50. The Pitman asymptotic efficiency (PAE) of the test is calculated and compared with, the (PAE) of the test for new renewal better than used (NRBU) class of life distribution [see Mahmoud et al (2003)]. The power of this test is also calculated for some commonly used life distributions in reliability. The right censored data case is also studied. Finally, real examples are given to elucidate the use of the proposed test statistic in the reliability analysis.

• Magazine of the Korea Concrete Institute
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• v.10 no.5
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• pp.217-225
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• 1998

분쇄한 FRP(Fiver-Reinforced Plastics) 폐기물을 사용한 폴리머 모르타르의 물성에 고나하여 조사하였다. 분쇄한 FRP 폐기물을 시멘트 모르타르의 세골재로 재활용하기 위하여 세골재에 대하여 0~50wt% 치환.사용하였고, FRP 폐기물의 사용으로 나타나는 강도 저하현상을 보완하기 위하여 3종류 폴리머 혼화제의 첨가량을 변화시켜 각종 공시체를 제작하였다. 폴리머 혼화제로서는 styrene-bytadiene rubber(SBR) 라텍스, polyacrylic ester(PAE) 에멀젼 및 ethylene-vinyl acetate(EVA)에멀젼을 사용하였다. 분쇄한 FRP 폐기물을 사용한 시멘트 모르타르에 폴리머 혼화제를 첨가하여 만든 폴리머 시멘트 모르타르는 폴리머 혼화제를 첨가하지 않은 모르타르보다 압축 및 휨강도가 크게 증가하였다. 폴리머 시멘트비 10wt%에서 세골재 대용으로 분쇄한 FRP 폐기물의 적정 치환량은 20wt%로 나타났다. 8$0^{\circ}C$에서 가열양생하여 제조한 폴리머 시멘트 모르타르는 폴리머 시멘트비 10wt%이하에서 표준양생한 모르타르보다 강도가 저하되었다. 폴리머 시멘트 포르타르의 흡수율은 폴리머 시멘트비가 증가함에 따라 크게 감소하였다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.2
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• pp.68-71
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• 2006

A class-E power amplifier is designed using 0.25$\mu$m standard CNMOS technology at 900MHz and the reliability characteristics are studied with the load network. The reliability characteristics is improved when a finite DC-feed inductor is used instead of RF choke. At the one you halt, the PAE(Power Added Efficiency) decreases from 58.0$\%$ to 35.7$\%$ and output power decreases from 120mW to 74mW in power amplifier using RF choke. However, when a finite DC-feed inductor is used with load the PAE decreases from 58.5$\%$ to 54.8$\%$ and output power decreases from 121mW to 112mW. From the simulated results, the class-E power amplifier with a finite DC-feed inductor shows superior reliability characteristics compared to rower amplifier using RF choke inductor.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.403-408
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• 2008

In this paper, the high efficiency and linearity Doherty power amplifier using DGS and adaptive bias technique has been designed and realized for 2.3GHz WiBro applications. The Doherty amplifier has been implemented us-ing silicon MRF 281 LDMOS FET. The RF performances of the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias-tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone, and conventional Doherty amplifier. The Maximum PAE of designed Doherty power amplifier with DGS and adaptive bias technique has been 36.6% at 34.01dBm output power. The proposed Doherty power amplifier showed an improvement 1dB at output power and 7.6% PAE than a class AB amplifier alone.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.68-68
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• 2010

최근에 양전자의 고유 성질을 이용하여 반도체 및 도체의 표면, 계면 그리고 박막의 특성을 분석하는 기술로 소개되고 있다. 양전자는 양의 전하를 갖으며, 반물질인 전자와 쌍소멸하면서 감마선과 Auger 전자를 방출하는 특성을 이용하여 원소의 화학적 분석을 처음으로 증명하였다 (1987, UTA). 이후 도체 및 반도체의 표면 및 박막성장의 초기 성장 양상을 EAES, LEED와 상호보완적으로 활용하여 다양한 결과를 보고한 바 있다. 최근에는 기존의 양전자 이용 Auger전자 분광기의 단점을 극복하고 Time-Of-Flight(TOF) 시스템을 활용하여 향상된 성능과 Cu(100) 표면에서 얻은 전자 스펙트럼의 연구 결과를 소개하고자 한다. UTA의 TOF PAES 시스템을 이용하여 Si(100)표면에 Se 원자의 열적 안정성을 연구하였다. 1ML의 Se을 Si(100)위에 성장한 후 가열하면서 PAES의 스펙트럼을 반복적으로 취하였다. $800^{\circ}C$ 이상의 온도로 가열하는 경우 Se MVV Auger 피크는 약해지고 Si LVV 피크가 나타나기 시작했다. MgO(100) 표면과 Cu2O/ITO 시스템의 온도 안정성 결과를 보고하고 PAES의 향상된 표면 선택도 등 장점이 표면 분석 기술로서 적합함을 보고하고자 한다.