• 한국광학회지
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• 제19권1호
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• pp.9-14
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• 2008

본 논문에서는 테라헤르츠 대역에서 동작하는 새로운 구조의 Yagi-Uda 안테나를 설계하였다. 제안한 Yagi-Uda 안테나는 안테나의 driver를 반 파장 다이폴이 아닌 전 파장 다이폴을 사용함으로써 공진주파수에서 $2000{\Omega}$ 정도의 높은 입력 저항을 얻을 수 있었다. 바이어스 선에 Photonic Bandgap 구조를 적용하여 바이어스 선로로의 전류누설을 최소화 하였고, 안테나를 얇은 기판에 설계함으로써 기판의 비유전율로 인한 안테나의 임피던스 저하를 막고 Yagi-Uda 안테나 고유의 단방향 지향적인 복사특성을 나타나게 하였다. 따라서 제안한 Yagi-Uda 안테나는 포토믹서와의 임피던스 부정합 문제를 개선하여 테라헤르츠파의 출력을 증가 시킬 수 있을 것이라 예상한다.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.525-529
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• 2017

Molybdenum oxide ($MoO_3$) offers pivotal advantages for high optical transparency and low light reflection. Considering device fabrication, n-type $MoO_3$ semiconductor can spontaneously establish a junction with p-type Si. Since the energy bandgap of Si is 1.12 eV, a maximum photon wavelength of around 1,100 nm is required to initiate effective photoelectric reaction. However, the utilization of infrared photons is very limited for Si photonics. Hence, to enhance the Si photoelectric devices, we applied the wide energy bandgap $MoO_3$ (3.7 eV) top-layer onto Si. Using a large-scale production method, a wafer-scale $MoO_3$ device was fabricated with a highly crystalline structure. The $MoO_3/p-Si$ heterojunction device provides distinct photoresponses for long wavelength photons at 900 nm and 1,100 nm with extremely fast response times: rise time of 65.69 ms and fall time of 71.82 ms. We demonstrate the high-performing $MoO_3/p-Si$ infrared photodetector and provide a design scheme for the extension of Si for the utilization of long-wavelength light.

• 한국표면공학회지
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• 제51권2호
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• pp.126-132
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• 2018

SnS thin films with different substrate temperatures ($150 {\sim}300^{\circ}C$) as process parameters were grown on soda-lime glass substrates by RF magnetron sputtering. The effects of substrate temperature on the structural and optical properties of SnS thin films were investigated by X-ray diffraction (XRD), Raman spectroscopy (Raman), field-emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), and Ultraviolet-visible-near infrared spectrophotometer (UV-Vis-NIR). All of the SnS thin films prepared at various substrate temperatures were polycrystalline orthorhombic structures with (111) planes preferentially oriented. The diffraction intensity of the (111) plane and the crystallite size were improved with increasing substrate temperature. The three major peaks (189, 222, $289cm^{-1}$) identified in Raman were exactly the same as the Raman spectra of monocrystalline SnS. From the XRD and Raman results, it was confirmed that all of the SnS thin films were formed into a single SnS phase without impurity phases such as $SnS_2$ and $Sn_2S_3$. In the optical transmittance spectrum, the critical wavelength of the absorption edge shifted to the long wavelength region as the substrate temperature increased. The optical bandgap was 1.67 eV at the substrate temperature of $150^{\circ}C$, 1.57 eV at $200^{\circ}C$, 1.50 eV at $250^{\circ}C$, and 1.44 eV at $300^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.83.1-83.1
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• 2010

Hydrogenated a-SiGe middle cell for triple junction solar cell was investigated with various process parameters. a-SiGe I-layer was deposited at substrate temperature $245^{\circ}C$ and hydrogen content(R) was up to 26.7. Low optical bandgap(1.45eV) of a-SiGe cell was applied for middle cell although a-SiGe single cell efficiency with low Ge content was higher. And this cell was applied to the middle cell of a glass superstrate type a-Si/a-SiGe/uc-Si triple junction solar cell. The triple junction solar cell was resulted in the initial efficiency of about 9%, area $0.25cm^2$, under global AM 1.5 illumination.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.239.2-239.2
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• 2015

Graphene is a most interesting material due to its unique and outstanding properties. However, semi-metallic properties of graphene along with zero bandgap energy structure limit further application to optoelectronic devices. Recently, many researchers have shown that band gap can be induced in the Bernal stacked bilayer graphene. Several methods have been used for the controlled growth of the Bernal staked bilayer graphene, but it is still challenging to control the growth process. In this paper, we synthesize the large area Bernal stacked bilayer graphene using multi heating zone low pressure chemical vapor deposition (LPCVD). The synthesized bilayer graphenes are characterized by Raman spectroscopy, optical microscope (OM), scanning electron microscopy (SEM). High resolution transmission electron microscopy (HRTEM) is used for the observation of atomic resolution image of the graphene layers.

• 한국레이저가공학회지
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• 제16권1호
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• pp.1-4
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• 2013

The optical properties of III-V compound semiconductor structure was investgated by photoreflectance (PR). The results show two signals at 1.42 and 1.73eV. These are attributed to the bandgap energy of GaAs, AlGaAs, respectively. Also, AlGaAs region showed weak signal. This signal is attributed to carbon or si defect.

• 한국전기전자재료학회논문지
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• 제17권3호
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• pp.319-322
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• 2004

ZnO nanostructures were formed on a Si substrate by off-axis pulsed laser deposition(PLD) system in which a substrate plane was tilted toward a plume propagation direction. Atomic force microscopy (AFM) showed islands of 20∼40 nm width. From the x-ray diffraction (XRD) pattern exhibiting only (002) ZnO peak, the islands observed in AFM image were found to well crystallized. Optical bandgap enlargement from 3.26 eV to 3.35 and 3.47 eV due to the quantum size effect of ZnO nanostructures were observed by Photoluminescence (PL) at room temperature.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.139-144
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• 2001

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.55-61
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• 2003

This paper describes how the optical properties of a quasi-one-dimensional photonic crystalline waveguide having a periodic air cavity are influenced by various structural parameters; the electromagnetic fields are simulated using the finite-difference time-domain method. The simulations considered four design parameters: cavity size, defect size, lattice constant, and number of cavity. The parameter sensitivity of the photonic bandgap property of the waveguide having air cavities is examined. A couple of significant design guidelines are obtained. We show that the quasi-one-dimensional photonic crystalline waveguide has significant unrealized potential.

• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.241-246
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• 2016

ZnO thin films have wide application areas due to its versatile properties as transparent conductors, wide-bandgap n-type semiconductors, gas sensor materials, and etc. We have performed a systematic investigation on ultraviolet-assisted CVD (chemical vapor deposition) method. Ultraviolet irradiation during the deposition of ZnO causes chemical reduction on the growing surface; which results in the reduction of the deposition rate, increase in the surface roughness, and decrease of the electrical resistivity. These effects produce larger characteristic variation with various deposition conditions in terms of surface morphology and optical/electrical properties compared to normal CVD deposited ZnO thin films. This versatile controllability of ultraviolet-assisted CVD can provide a larger processing options in the fabrication of nano-structured materials and flexible device applications.