Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Photoinduced Birefringence of Chalcogenide Thin Film by the Ag Polarized-photodoping

Ag 편광-광도핑에 의한 칼코게이나이드 박막의 광유기 복굴절

  • 장선주 (광운대학교 공과대학 전자재료공학과) ;
  • 박종화 (광운대학교 공과대학 전자재료공학과) ;
  • 박정일 (광운대학교 공과대학 전자재료공학과) ;
  • 정홍배 (광운대학교 공과대학 전자재료공학과)
  • Published : 2001.02.01
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Abstract

In this study, we have investigated the photoinduced birefringence of Ag plarized-photodoping in double-layer of Ag doped chalcognide thin films and dependence of polarization states in chalcogenide thin films. Also, we have investigated the polarization dependence of photoinduced birefringence and the anisotropy of absorption in an amorphous As$\sub$40/Ge$\sub$10/Se$\sub$15/S$\sub$35/ chalcogenide thin films using two 632.8nm He-Ne lasers, which have a smaller energy than the optical energy gap (E$\sub$OP/) of the film, i.e., an exposure of sub-bandgap light (hν$\sub$op/). The photoinduced phenomena of Ag polarized-photodooping increasing the linear dichroism(d), about 84% and birefringence(Δn), about 23%. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin films.

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References

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