• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.361-364
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• 1996

Aging diagnosis system using partial discharge(PD) is being highlighted as a research area. But the application of PD requires complicated analysis method because the PD has complex progressing forms. In this paper, It has been developed to the PD diagnosis system using neural network(NN). As a result after NN learning, the recognized rate was represented about 85%. The safety area is possible to express the second output of NN in this experiments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.2
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• pp.184-189
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• 2002

Carbon nitride films were grown on Si (100) substrate by a laser-electric discharge method with/without a magnetic field assistance. The magnetic field leads to vapor plume plasma expending upon the ambient arc discharge plasma area. Influence of the magnetic field has resulted in increased of a crystallite size int he films due to bombardment (heating) of Si substrates by energetic carbon and nitrogen species generated during cyclotron motion of electrons in the discharge zone. The surface morphology of the films with a deposition time of 2 hours was studied using a scanning electron microscopy (SEM). In order to determine the structural crystalline parameters, X-ray diffraction (XRD) was used to analysis the grown films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.98-101
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• 2005

BSCCO thin films fabricated by using the evaporation method. As a result, although the composition of Bi2212 was set up, the phase of Bi2201, Bi2212 and Bi2223 was formed. The formation area of these stable phases is indicated as inclined line in the direction of the right lower end from the Arrhenius plot of the substrate temperature-oxidation gas pressure, and are distributed in very small area. The activation energy for the phase transformation from the Bi2201 to the Bi2212 is estimated in terms of the Avrami equation.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1994.06a
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• pp.1-9
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• 1994

Three recent developments made at Rensselaer in sheet material forming processes are briefly reviewed in this paper. These advances represent three broad disciplines of Process Simulation, Forming Processes, and Computer-Aided Measurement Methods. The first development deals with simple and quick computer simulation of 2D sheet forming process without depending on popular finite element analysis methods. An analytical method based on a thin shell theory accounts for bending and unbending effects, and is capable of simulating practical sheet metal forming processes under the plane strain condition. The second area is concerned with innovative methods to improve formability of sheet materials by temperature gradient forming. The drawing limit is increased by such an improved temperature gradient forming process. The third and final area deals with a totally new experimental technique to capture 3D geometry data and measure strain distributions of sheet metal parts using a digital 35mm SLR camera.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.67-75
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• 2013

In order to improve osseo-integration of a dental implant with bone crystal we studied an implant with holes inside its body to deliver bioactive materials based on a proposed patent. After bioactive material is absorbed, bone crystal can grow into holes to increase implant bonding in addition to surface integration. The larger cross section area of outlet holes showed the less values of the maximum stress, and the stress concentrations near the uppermost outlet holes were also reduced with an increasing number of outlet holes. The conclusion, that the uppermost outlet design improvement was most effective to reduce the stress concentration and improve the growth rate of bone crystal, could be drawn. After the design optimizations, Type 6-C had provided the best results in this study. The overall shape optimization studies on the shape, location, number, and so on, of the outlet holes, should be carried out further.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.243-246
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• 1999

The displacement current measuring system used for detecting the dynamic behavior of monolayers at the air-water interface is described. It basically consists of a film balance, a pair of electrodes connected to each other through a sensitive ammeter. Here, one electrode is suspended in air and the other electrode is the water, With Maxwll-displacement-current-measuring method, the phase transitions of Poly(λ-benzyl- L-glutamate)(PBLG) on a water surface were detected, Displacement currents generated during the compression of monolayers of PBLG on the surface of water were investigated. As results, the displacement pick was generated when the area per molecule was about 15 $\AA$$^{2}$ in low pressure, and tit was generarted when the area per molecule about 27$\AA$$^{2}$ in high pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.557-560
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• 1999

The design of large area thin film transistor liquid crystal displays (TFT-LCDs) requires consideration of cross-talks between the data lines and pixel electrodes. These limits are imposed by the parasitic capacitive elements present in a pixel. The capacitive coupling of the data line signal onto the pixel causes a pixel voltage error. In this study semi-empirical capacitance model which is adopted from VLSI interconnection capacitance calculations was used to calculate mutual coupling capacitances. With calculated mutual coupling capacitances and given image pattern, the root mean square(RMS) voltage of pixel is calculated to see vertical cross-talk from the first to the last column. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.759-762
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• 2000

Present transistors which have vertical structure show increased parasitic capacitance characteristics in accordance with the increase of non-active base area and collector area, consequently have disadvantage for high speed switching performance. In this paper, a horizontal structure transistor which has minimized parasitic capacitance in virtue of SDB(Silicon Direct Bonding) wafer and oxide sidewall isolation utilizing silicon trench technology is presented. Its structural characteristics were designed by ATHENA(SUPREM4), the process simulator from SILVACO International, and its performance was proven by ATLAS, the device simulator from SILVACO International. The performance of the proposed horizontal structure transistor was certified through the VCE-lC characteristics curve, $h_{FE}$ -IC characteristics, and GP-plot.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.475-478
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• 2000

Maxwell displacement current(MDC) was generated when the area per molecule was about 140${\AA}$$^2$and 100${\AA}$$^2$. MDC were investigated in connection with monolayer compression cycles. It was found that the maximum of MDC appeared at the molecular area just before the initial rise of surface pressure in compression cycles. The absorption spectra of polyamic acid containing p-methoxyazobenzene in a mixture of N,N-dimethylacetamide(DMAc) and benzene(1:1 by volume) solution was induced photoisomerization by UV and visible light irradiation. The precursor LB film was heated in a vacuum dry oven at 120$^{\circ}C$ in order to convert it into the LB film of polyimide. The absorption spectra of LB films were also induced photoisomerization by UV and visible light irradiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.4
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• pp.332-337
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• 2002

The applicability of models based on fractal geometry to characterize the surface of the EL devices was investigated. Insulating layer and phosphor layer of EL devices were deposited on ITO glass using e-beam method. The images of phosphor layer by scanning electron microscope(SEM) were transformed to binary coded data. The relations between fractal geometry and electrical characteristics of EL devices were investigated. When the fractal dimension of $Cas:EuF_3$ EL device was 1.82 and its grain boundary area was 19%, the brightness of $Cas:EuF_3$ EL device was 261 cd/$\textrm{m}^2$.