• 전자공학회논문지C
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• 제35C권6호
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• pp.1-8
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• 1998

본 논문에서는 동일 칩 내부에 static CMOS와 하이브리드 로직 스타일(hybrid logic style)을 이용하여 저전력 8비트 ELM 덧셈기를 설계하였다. 두 개의 로직 스타일로 설계된 8비트 ELM 덧셈기는 0.8㎛ 단일 폴리 이중 금속, LG CMOS 공정으로 설계되어 측정되었다. 하이브리드 로직 스타일은 CCPL(Combinative Complementary Pass-transistor Logic), Wang's XOR 게이트와 ELM 덧셈기의 속도를 결정하는 임계경로(critical path)를 위한 static CMOS 등으로 구성된다. 칩 측정 결과, 전원 전압 5.0V에서 하이브리드로직으로 구현한 ELM 덧셈기가 static CMOS로 구현한 덧셈기에 비해 각각 전력소모 면에서 9.29%, 지연시간 면에서 14.9%, PDP(Power Delay Product)면에서 22.8%의 향상을 얻었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권1호
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

• 조명전기설비학회논문지
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• 제21권1호
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• pp.28-34
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• 2007

본 연구에서는 새로 고안된 방전 논리 게이트 PDP의 논리 게이트 입력인 DC 방전특성에 대해 고찰하였다. 새로 고안된 방전 논리 게이트는 방전 경로에 따른 전극사이의 전위차를 제어하여 논리 출력을 유도한다. 실험결과 이 DC 방전들의 안정성을 위해 프라이밍 방전을 인가한 경우가 인가하지 않은 경우에 비해 방전지연시간이 1/3로 단축되며 방전개시전압은 1/2로 감소하였다. 또한 이 프라이밍 방전에서 발생한 공간전하는 방전종료 후 $30[{\mu}s]$ 정도까지 영향을 미친다. 그리고 시간적, 공간적 거리변화에 파라 공간전하가 DC 방전에 미치는 영향을 측정한 결과, 주 방전에서부터 시간적으로 멀어지는 것보다 공간적으로 멀어지는 것이 주 방전의 영향에서 쉽게 벗어날 수 있음을 알았다. 그러므로 각 주사전극 마다 방전 논리 게이트들을 독립적으로 동작시킬 수 있다는 결론을 얻었다.

• 전자공학회논문지C
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• 제35C권8호
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• pp.33-41
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• 1998

We have designed a high speed and low power 16bit-ELM adder with variable-sized cells uitlizing the fact that the logic depth of lower bit position is less than that of the higher bit position int he conventional ELM architecture. As a result of HSPICE simulation with 0.8.mu.m single-poly double-metal LG CMOS process parameter, out 16bit-ELM adder with variable-sized cells shows the reduction of power-delay-product, which is less than that of the conventional 16bit-ELM adder with reference-sized cells by 19.3%. We optimized the desin with various logic styles including static CMOs, pass-transistor logic and Wang's XOR/XNOR gate. Maximum delay path of an ELM adder depends on the implementation method of S cells and their logic style.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.146-153
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• 2006

We have been investigating InGaAs HEMTs as a future high-speed and low-power logic technology for beyond CMOS applications. In this work, we have experimentally studied the role of the side-recess spacing $(L_{side})$ on the logic performance of 50 nm $In_{0.7}Ga_{0.3}As$ As HEMTs. We have found that $L_{side}$ has a large influence on the electrostatic integrity (or short channel effects), gate leakage current, gate-drain capacitance, and source and drain resistance of the device. For our device design, an optimum value of $L_{side}$ of 150 nm is found. 50 nm $In_{0.7}Ga_{0.3}As$ HEMTs with this value of $L_{side}$ exhibit $I_{ON}/I_{OFF}$ ratios in excess of $10^4$, subthreshold slopes smaller than 90 mV/dec, and logic gate delays of about 1.3 ps at a $V_{CC}$ of 0.5 V. In spite of the fact that these devices are not optimized for logic, these values are comparable to state-of-the-art MOSFETs with similar gate lengths. Our work confirms that in the landscape of alternatives for beyond CMOS technologies, InAs-rich InGaAs FETs hold considerable promise.

• 전자공학회논문지C
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• 제35C권11호
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• pp.1-10
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• 1998

휴대용 전자 시스템에 대한 deep submicron VLSI의 출현에 따라 기존의 면적과 성능(지연시간)외에 전력량 감축을 위한 새로운 방식의 CAD 알고리즘이 필요하게 되었다. 본 논문은 논리합성시 기술매핑 단계에서의 전력량 감소를 목적으로 한 논리 게이트 분할(gate decomposition)을 통한 재합성 알고리즘을 소개한다. 기존의 저전력을 위한 논리분할 방식은 Huffman 부호화 방식을 이용하였으나 Huffman code는 variable length를 가지고 있으며 logic depth (회로지연시간)와 글리치에 영향을 미치게 된다. 제안된 알고리즘은 임계경로상에 있지 않은 부회로에 대한 스위칭 동작량을 줄임으로써 logic depth (즉 속도)를 유지하면서 다양한 재구성된 트리를 제공하여 스위칭 동작량을 줄임으로써 전력량을 감축시키는 새로운 게이트분할 알고리즘을 제안한다. 제안된 알고리즘은 zero 게이트 지연시간을 갖는 AND 트리에 대하여 스위칭 동작량이 최소화된 2진 분할 트리를 제공한다. SIS (논리합성기)와 Level-Map (lower power LUT-based FPGA technology mapper)과 비교하여 각각 58%와 8%의 전력 감축효과를 보였다.

• 전자공학회논문지A
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• 제31A권2호
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• pp.125-134
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• 1994

This paper proposes a new top-down technology mapping algorithm for minimizing the chip area and the path delay time of lookup table-based field programmable gate array(FPGA). First, we present the decomposition and factoring algorithm using common subexpre ssion which minimizes the number of basic logic blocks and levels instead of the number of literals. Secondly, we propose a cube packing algorithm considering the decomposition of gates which exceed m-input lookup table. Previous approaches perform the cube packing and the gate decomposition independently, and it causes to increase the number of basic logic blocks. Lastly, the efficiency.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.1885-1890
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• 2003

In this paper, we have developed the voltage controlled crystal oscillator (VCXO) with positive emitter coupled logic(PECL). The VCXO is a crystal oscillator which includes a varactor diode and associated circuitry allowing the frequency to be changed by application of a voltage across that diode. The characteristics of the PECL has the delay time less than 2 ns and the faster logic gate, and the high level output greater than 2.3 V and the low level output smaller than 1.68 V.

• 센서학회지
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• 제26권3호
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• pp.209-213
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• 2017

The delay-insensitive Null Convention Logic (NCL) asynchronous design as one of innovative asynchronous logic design methodologies has many advantages of inherent robustness, power consumption, and easy design reuses. However, transistor-level structures of conventional NCL gate cells have weakness of high area overhead and high power consumption. This paper proposes a new NCL gate based on power gating structure. The proposed $4{\times}4$ NCL multiplier based on power gating structure is compared to the conventional NCL $4{\times}4$ multiplier and MTNCL(Multi-Threshold NCL) $4{\times}4$ multiplier in terms of speed, power consumption, energy and size using PTM 45 nm technology.

• 대한전자공학회논문지
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• 제16권2호
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• pp.7-14
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• 1979

Integrated Injecton Logic의 설계를 npn transistor 의 상향전류증폭율, βu 을 중심으로 하여 검토하였다. I2L 기본회로의 DC, AC특성과 npn transistor의 베이스 전류성분을 측정하기 위하여 test structure를 제작하였으며 또한 I2L T flip-flop도 설rP, 제작하였다. 제작된 test structure의 특성은 βe가 10, speed-power product가 2.6p.J/gate, 최소 전달지연 시간이 36 nsec 였으며 T flip-flop은 3.5 MHz 까지 동작하였다.