• Earthquakes and Structures
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• v.15 no.2
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• pp.133-144
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• 2018

To study the effectiveness of sliding isolation in a CRLSS (concrete rectangular liquid-storage structure) and develop a reasonable limiting-device method, dynamic responses of non-isolation, sliding isolation with spring limiting-devices and sliding isolation with steel bar limiting-devices are comparatively studied by shaking table test. The seismic response reduction advantage of sliding isolation for concrete liquid-storage structures is discussed, and the effect of the limiting-device type on system dynamic responses is analyzed. The results show that the dynamic responses of sliding isolation CRLSS with steel bar-limiting devices are significantly smaller than that of sliding isolation CRLSS with spring-limiting devices. The structure acceleration and liquid sloshing wave height are greatly influenced by spring-limiting devices. The acceleration of the structure in this case is close to or greater than that of a non-isolated structure. Liquid sloshing shows stronger nonlinear characteristics. On the other hand, sliding isolation with steel bar-limiting devices has a good control effect on the structural dynamic response and the liquid sloshing height simultaneously. Thus, a limiting device is an important factor affecting the seismic response reduction effect of sliding isolation. To take full advantage of sliding isolation in a concrete liquid-storage structure, a reasonable design of the limiting device is particularly important.

• Structural Engineering and Mechanics
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• v.74 no.1
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• pp.69-82
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• 2020

A significant defect of space structures is the progressive collapse issue which may restrict their applicability. Force limiting devices (FLDs) have been designed to overcome this deficiency, though they don't operate efficiently in controlling the force displacement characteristics. To overcome this flaw, a new type of FLD is introduced in the present study. The "all steel accordion force limiting device" (AFLD) which consists of three main parts including cylindrical accordion solid core, tubular encasing and joint system is constructed and its behavior has been studied experimentally. To improve AFLD's behavior, Finite element analysis has been carried out by developing models in ABAQUS software. A comprehensive parametric study is done by considering the effective design parameters such as core material, accordion wave length and accordion inner diameter. From the results, it is found that AFLD can obtain a perfect control on the force-displacement characteristics as well as attaining the elastic-perfect plastic behavior. Obtaining higher levels of ultimate load carrying capacity, dissipated energy and ductility ratio can be encountered as the main privileges of this device. Ease of construction and erection are found to be further advantages of AFLD. Based on the obtained results, a procedure for predicting AFLD's behavior is offered.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1451-1453
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• 1994

A monolithic current limiting power MOSFET, which may be easily fabricated by the conventional DMOS process, is proposed. The proposed current limiting MOSFET consists of main power cells, sensing cells, and NPN lateral bipolar transistor so that users can adjust the current limiting levels with only one external resistor. The behaviors of the proposed device are numerically simulated and analyzed by 2-D device simulator MEDICI and mixed-mode simulator CA-AAM(Circuit Analysis Advanced Application Module).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.25 no.2
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• pp.120-125
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• 2011

SPDs are increasingly being used against lightning and switching surge according to the applicable revised standard and equipotential grounding system. SPDs are equipped usually with a MOV voltage regulating element. The MOV, however, always is exposed to the danger of thermal runaway resulting from inrushing temporary overvoltage and deterioration. In this paper, the authors made two prototype SPDs built-in Instantaneous trip device and analyzed their limiting voltage through test of the MOV breakdown. As the result of the analysis, the SPDs built-in Instantaneous trip device was proven to be effective for protecting MOV against thermal runaway and Instantaneous trip device react for limiting voltage is considered that is applicable to SPD.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.30-37
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• 2006

In this article, we evaluated the structural merits and the validity of a partially insulated MOSFET (PiFET) through the fabrication of prototype transistors and an 80 nm 512M DDR DRAM with partially-insulated cell array transistors (PiCATs). The PiFETs showed the outstanding short channel effect immunity and off-current characteristics over the conventional MOSFET, resulting from self-induced halo region, self-limiting SID shallow junction, and reduced junction area due to PiOX layer formation. The DRAM with PiCATs also showed excellent data retention time. Thus, the PiFET can be a promising alternative for ultimate scaling of planar MOSFET.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.6
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• pp.300-304
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• 2004

We have proposed the junction termination design employing shallow trench filled with silicon dioxide and field limiting ring (FLR). We have designed trenches between P+ FLRs to decrease the junction termination radius without sacrificing the breakdown voltage characteristics. We have successfully fabricated and measured improved breakdown voltage characteristics of the Proposed device for 1200 V-class applications. The junction termination radius of the proposed device has decreased by 15%-21% compared with that of the conventional FLR at the identical breakdown voltage. The junction termination area of the proposed device has decreased by 37.5% compared with that of the conventional FLR. The breakdown voltage of the proposed device employing 7 trenches was 1156 V, which was 80% of the ideal parallel-plane .junction breakdown voltage.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1745-1747
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• 2004

In order to anticipate gradual increase of fault current in electric power systems, current limiting technology and current limiting device has been investigated for a long time. But the commercial use of current limiting device was delayed due to the lack of effective method to insert impedance to the elective power systems without loss and surplus defects. However, novel current limiting device, which use superconducting materials, was considered as a dream technology to be applied in a distribution and transmission lines. LG Industrial systems and KERPI started to investigate resistive type superconducting fault current limiters in order to develop 154kV fault current limiters and this year, we succeed to test 3 phase 6.6kV/200A fault current limiters. Based on these achievements, 24kV superconducting fault current limiters will be realized withing 3 years which could be tested in a real fields. In this paper, the developments of fault current limiting module which use YBCO thin films, cryogenic systems, the structure and construction of 3 phase fault current limiters and finally the test results of 6.6kV superconducting fault current limiters will be introduced.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.3
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• pp.386-392
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• 1996

Zinc-Borosilicate is used as a side insulator wall to make high breakdown voltage with one Field Limiting Ring in a power p-n junction device in simulation. It is known that surface charge density can be yield at the interface of Zinc-Borosilicate glass / silicon system. When the glass is used as a side insulator wall, surface charge varied potential distribution and breakdown voltage is improved 1090 V under the same structure.The breakdown voltage under varying the surface charge density has a limit value. When the epitaxial thickness is varied, the position of FLR doesn't influence to the breakdown characteristic not only under non punch-through structure but also under punch-through structure. (author). 7 refs., 12 figs., 2 tabs.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1686-1688
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• 1999

The FLR(Field Limiting Ring) structure with a buried ring is proposed to improve breakdown voltage. The breakdown characteristics of proposed structure is verified by two-dimensional device simulator. ATLAS. It has shown that the breakdown voltage of the proposed structure is increased by 11 % compared with that of the FLR.

• Progress in Superconductivity and Cryogenics
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• v.9 no.3
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• pp.57-61
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• 2007

The current limiting characteristics of hybrid SFCL with additional power electronic devices was investigated in order to improve operation reliabilities. The hybrid SFCL developed consists of a superconducting trigger (S/T) part, a fast switch (F/S) module and a current limiting (C/L) part. Although hybrid SFCL had shown a excellent current limiting characteristics, this device was rather vulnerable to the residual arc currents which could exist during fast switch operation. This undesirable arc should be extinguished as quickly as possible in order to implement perfect fault current commutation. So, in order to eliminate the residual arcs between fast switch contacts, the power electronic devices (IGBT or GTO) were connected in series between the S/T part and the interrupter of the F/S module. According to the fault tests conducting with an input voltage of $270\;V_{rms}$ and a fault current of $5\;kA_{rms}$, The power electronic devices could perfectly remove the arc generated between the contacts of the interrupter within 4 ms after the fault occurred. From the test analysis, it was confirmed that the hybrid SFCL could enhance the operation reliability by adopting additional power electronic devices.