Fabrication and Electrical Properties of GaN M IS Structures using Aluminum Oxide Thin Film (산화알루미늄 박막을 이용한 GaN MIS 구조의 제작 및 전기적 특성)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.21 no.4
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- pp.329-334
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- 2008