Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Electrical Properties of GaN M IS Structures using Aluminum Oxide Thin Film

산화알루미늄 박막을 이용한 GaN MIS 구조의 제작 및 전기적 특성

  • 윤형선 (청주대학교 전자공학과) ;
  • 정상현 (청주대학교 전자공학과) ;
  • 곽노원 (청주대학교 전자공학과) ;
  • 김가람 (청주대학교 전자공학과) ;
  • 이우석 (청주대학교 전자공학과) ;
  • 김광호 (청주대학교 전자공학과) ;
  • 서주옥 ((주) 이츠웰 기술연구소)
  • Published : 2008.04.01
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Abstract

Aluminum oxide films were deposited on n-type GaN substrates by RF magnetron sputtering technique for MIS devices applications using optimized conditions, Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The calculated interface trap density measured at $300^{\circ}C$ was about $9\times10^{10}/cm^2$ eV in the upper bandgap. The gate leakage current densities of the MIS structures were about $10^{-9}A/cm^2$ and about $10^{-4}A/cm^2$ measured at room temperature and at $300^{\circ}C$ for $a{\pm}1MV/cm$, respectively. These results indicate that the interface property of this structure is enough quality to MIS devices applications.

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References

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