• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1433-1436
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• 2007

Using a blue emitting DPVBi material and red dopant DCJTB, WOLEDs with and without green emitter C6 added in ETL or HTL have been fabricated. The chromaticity color index of WOLEDs without C6 depends strongly on the doping concentration. In addition, manipulating thickness of emitting layer is similar effect such as controlling weight concentration of dopant. While the white color of WOLEDs with C6 added in ETL or HTL depend on position of C6. WOLED of three colors added green dye have been shown turn-on voltage of 3.25V, and EL efficiency 3.05cd/A @9V, $8102\;cd/m^2$, CIE coordinates (0.30, 0.32).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.955-958
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• 2001

The structure characteristics of varistor of Zn oxide to depend on the breakdown voltage has been investigated to annealing condition by additive material of Sb$_2$O$_3$ system. The breakdown voltage that has not doping Sb$_2$O$_3$ was 235[V]. ZnO varistors was shown ohmic properties when it's applied voltage was below critical voltage. It was shown non-ohmic properties over critical voltage, because current was increased with decreasing resistance. High voltage ZnO varistors had high breakdown voltage, but it had bad electrical stability with various surge. Sb$_2$O$_3$was increased non-linear coefficient in ZnO varistors grain boundary.

• Journal of Welding and Joining
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• v.9 no.3
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• pp.26-33
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• 1991

As it takes very long time for the Transient Liquid Phase(TLP) bonding, we tried to reduce the bonding time by changing insert material for the high diffusivity element. On this study boron powder was doped as a insert material on the bonding surface of Rene 80 superalloy, and diffusion treated at 1150.deg.C under vacuum. On this method differently from the TLP bonding the insert material was not melted during bonding but only the base metal reacted with the boron was inducedly melted. Therefore, as this bonding mechanism is different from the existing ones, it is suggested as a Melting Induced Diffusion Bonding. When this process was used for the diffusion bonding, the bonding time including homogenization decreased greatly compared to the conventional TLP bonding.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1473-1476
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• 2008

Doping the nanoparticles of Pd, p-$BaTiO_3$, $SiO_2$ and MgO into LCs alters their physical properties such as $K_{ii}$, $\Delta\varepsilon$, ${\Delta}n$, $\gamma_1$ and $T_{NI}$. Except for $K_{33}$, all these parameters decreases and thus bring the reduction of operating voltage and/or response times.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.423-426
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• 2017

The designing approaches with consideration offabrication process technologies for high-frequency, high-powered, silicon-based static induction thyristors (SITH) are presented. The effects of doping concentration and thickness on the I-V characteristics and power performance of the devices are discussed. The dependence of SITH switching performances on material, geometric structure, and technological parameters isexamined by using two-dimensional simulations. Thick-epitaxy technology is found to be one of the most critical steps in realizing the proposed structure and switching times, $t_{off}$, of SITH, which may be reduced to below ${\sim}0.26{\mu}s$ for the proposed 1,700 V SITH devicesafter optimization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.197-200
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• 1999

The polyacene materials prepared from phenol resine at relatively low temperature(550~75$0^{\circ}C$) show a highly Li-doped state up to $C_2$Li state without liberation of Li cluster. We prepared each polyacenic materials various temperature and investigated electrochemical property. We tried to change the mole ratio of [H]/[C] that was 0.24~0.4 range and finally found that the further discussion of improvements of battery materials. The X-ray structural analyses have shown that this material is essentiallly amorphous with loose structure in molecular size order. This structure ensures that the PAS battery has both reliability on repetitive doping-undoping processes and higher energy density than other batteries. The PAS electrode has been confirmed to show good stability and reversibility.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.192-195
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• 2000

Antimony doped tin oxyde thin films have been deposited by sol-gel method using non-alkoxide precursor SnCl$_2$$.$2H$_2$O as host and SbC1$_3$ as dopant material. Using spin coating method, thin films of thickness up to 200nm have been uniformly deposited on Corning 1737F non-alkali glass substrates. Effect of Sb doping concentration and heat treatment on electrical and optical properties was investigated. Heat treatment was performed at the temperature from 350$^{\circ}C$ to 650$^{\circ}C$ in flowing O$_2$. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition and firing condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.486-489
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• 2003

Red organic electroluminescent(EL) devices based on poly(N-vinylcarbazole)(PVK) and tris(8-hydroxyquinorine aluminum)($Alq_3$) doped with red emissive material, 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)4H-pyran(DCJTB), poly(3-hexylthiophene)(P3HT), Rubrene and 4-dicyanomethylene-2-methyl-6[2-(2,3,6,7-tetrahydro-1H,5H-benzo-[i.j])quinolizin-8yl)vinyl-4H-pyran(DCM2) were fabricated. We examine the energy transfer from $Alq_3$ to DCJTB, P3HT, Rubrene and DCM2 by comparing between the PL and EL spectrum. The maximum peak PL intensities were achieved when the doping concentration of DCJTB, DCM2, P3HT and Rubrene has 5, 1, 0.5, 2wt%, respectively. The maximum luminance of device using DCJTB showed $594\;cd/m^2$ at 15V.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.94-101
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• 2023

Zinc oxide(ZnO) is a semiconductor material with a bandgap of 3.37 eV and an exciton binding energy of 60 meV for various applications. Recently ZnO has been proven to enhance its electrical properties for utilization as an alternative for transparent conducting oxide (TCO) materials. In this study, cation(Al, Ga)-anion(F) single and double doped ZnO thin films were grown by atomic layer deposition (ALD) to enhance the electrical properties. The structural and optical properties of doped ZnO thin films were analyzed, and doping effects were confirmed to electrical characteristics. In single doped ZnO, it was observed that the carrier concentration was increased after doping, acting as a donor to ZnO. Among the single doping elements, F doped ZnO(FZO) showed the highest mobility and conductivity due to the passivation effect of oxygen vacancies. In the case of double doping, higher electrical characteristics were observed compared to single doping. Among the samples, Al-F doped ZnO(AFZO) exhibited the lowest resistance value. This results can be attributed to an increase in delocalized electron states and a decrease in lattice distortion resulting from the differences in ionic radius. The partial density of states(PDOS) was also analyzed and observed to be consistent with the experimental results.

• Electrical & Electronic Materials
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• v.4 no.1
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• pp.19-30
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• 1991

W/Si의 조성비가 2.6인 CVD텅스텐 실리사이드를 어닐링처리후 dry 또는 wet oxidation하여 폴리사이드 구조에서 다결정 Si내의 농도가 실리사이드의 산화반응속도에 미치는 영향을 조사하였다. 인의 농도에 관계없이 항상 실리사이드의 산화속도가 (100)Si의 그것보다 더 높았다. 저온에서 dry oxidation한 경우 인의 농도가 증가함에 따라 산화속도는 감소하였으나 고온에서 dry oxidation한 경우에는 P농도와 산화속도간에 상관관계가 별로 없었다. 한편, wet oxidation의 경우에는 모든 산화온도에서 인의 농도가 높을수록 실리사인의 산화속도가 더 낮은 것으로 나타났다.