Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of ATO Thin Films Prepared by Sol-Gel Process

졸겔법으로 제조된 ATO 박막의 특성 연구

  • 구창영 (영남대학교 재료금속공학부) ;
  • 이동근 (영남대학교 재료금속공학부) ;
  • 이희영 (영남대학교 재료금속공학부)
  • Published : 2000.11.01
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Abstract

Antimony doped tin oxyde thin films have been deposited by sol-gel method using non-alkoxide precursor SnCl$_2$$.$2H$_2$O as host and SbC1$_3$ as dopant material. Using spin coating method, thin films of thickness up to 200nm have been uniformly deposited on Corning 1737F non-alkali glass substrates. Effect of Sb doping concentration and heat treatment on electrical and optical properties was investigated. Heat treatment was performed at the temperature from 350$^{\circ}C$ to 650$^{\circ}C$ in flowing O$_2$. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition and firing condition.

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