Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Optimization of 1,700 V Static Induction Thyristor Devices

1,700 V급 Static Induction Thyristor 소자 최적화

  • 문경숙 (가천대학교 글로벌캠퍼스) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Received : 2017.05.07
  • Accepted : 2017.05.16
  • Published : 2017.07.01
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Abstract

The designing approaches with consideration offabrication process technologies for high-frequency, high-powered, silicon-based static induction thyristors (SITH) are presented. The effects of doping concentration and thickness on the I-V characteristics and power performance of the devices are discussed. The dependence of SITH switching performances on material, geometric structure, and technological parameters isexamined by using two-dimensional simulations. Thick-epitaxy technology is found to be one of the most critical steps in realizing the proposed structure and switching times, $t_{off}$, of SITH, which may be reduced to below ${\sim}0.26{\mu}s$ for the proposed 1,700 V SITH devicesafter optimization.

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References

  1. H. Onosea, Y. Kobayashib, and J. Onukic, Solid-State Electronics, 129, 200 (2017). [DOI: https://doi.org/10.1016/j.sse.2016.11.004]
  2. H. Li and S. Li, J. Semicond., 31, 124003 (2010). [DOI: https://doi.org/10.1088/1674-4926/31/12/124003]
  3. W. Chen, F. So, and J. Guo, J. Appl. Phys., 116, 044505 (2014). [DOI: http://dx.doi.org/10.1063/1.4891231]
  4. H. R. Li and S. Y. Li, IEEE Trans. Electron Dev., 58, 1149 (2011). [DOI: http://dx.doi.org/10.1109/TED.2010.2103363]
  5. B. J. Baliga, IEEE Trans. Electron Dev., 29, 1560 (1980). [DOI: http://dx.doi.org/10.1109/T-ED.1982.20915]
  6. Y. S. Wang, R. Wu, C. J. Liu, and Z. Wang, Semicond. Sci. Technol., 23, 152 (2008). [DOI: http://dx.doi.org/10.1088/0268-1242/23/2/025005]
  7. B. J. Baliga, M. S. Adler, P. V. Gray, R. P. Love, and N. Zommer, IEEE Trans. Electron Dev., 31, 683 (1984). [DOI: http://dx.doi.org/10.1109/IEDM.1982.190269]
  8. T. Trajkovic, F. Udrea, G.A.J. Amaratunga, W. I. Milne, S.S.M. Chan, P. R. Waind, J. Thomson, and D. E. Crees, Int. J. Electron., 86, 1153 (1999). [DOI: http://dx.doi.org/10.1080/002072199132716]
  9. B. Kim, K. C. Ko, and E. Hotta, IEEE Trans. Plasma Sci., 39, 901 (2011). [DOI: http://dx.doi.org/10.1109/TPS.2010.2099242]