• Journal of the Korean Chemical Society
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• v.37 no.3
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• pp.287-293
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• 1993

Ultraviolet spectrophotometric investigation has been carried out on the system of charge-transfer(CT) complex with iodine and tetramethyltin in n-hexane and acetone. From these results, the transient CT absorption spectrum can be observed and the subsequent disappearance of CT absorption spectrum is accompained by the cleavage of tetramethyltin with iodine (iododestannylation). Therefore, the rate constants for the iododestannylation were determined at 10, 25 and 35$^{\circ}C$ up to 1600 bar and the rates of reaction were increased with increasing temperature and pressure. From these rate constants, the values of the activation parameters (${\Delta}V^{\neq}$, ${\Delta}{\beta}^{\neq}$, ${\Delta}H^{\neq}$ and ${\Delta}S^{\neq}$) were obtained and discussed in terms of solvent structure variation of transition state and mechanism from these values. It could postulated that the reaction is followed with S$_F$2 mechanism and weakened S$_F$2 mechanism nature by increasing pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.122-122
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• 2008

Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.

• Microbiology and Biotechnology Letters
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• v.24 no.5
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• pp.604-612
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• 1996

To improve the fermentation characteristics of the haploid starch-fermenting recombinant yeast strain K114/YIpMS$\Delta$R(LEU2/URA3) secreting both $\alpha$-amylase and glucoamylase was rare-mated with polyploid industrial yeast Saccharomyces sp. K35. The K35 strain had good fermentation-characteristics such as ethanol-tolerance, high temperature and sugar-tolerance, and high fermentation rate. Among the resulting 66 hybrids, the best strain RH51 was selected. The RH51 exhibited amylolytic activity of K114/YIpMS$\Delta$R(LEU2/URA3) as well as ethanol and sugar tolerance of K35. The optimum temperature of hybrid RH51 for starch fermentation was 34$\circ$C which was same as that of K35 but different from that (30$\circ$C) of K114/YIpMS$\Delta$R(LEU2/URA3). The optimum pH was 5.0. The optimum size of inoculum was 2% as the pellet (w/v) of yeast cells. The hybrid strain RH51 produced 7.0% ethanol (w/v) from 20% (w/v) soluble starch while K35 formed almost no ethanol, 0.3% (w/v). RH51 strain produced 7.5% (w/v) ethanol after 8 days in a 2.5 l fermenter containing 800 ml of 20% (w/v) soluble starch. The residual starch content in the fermentation medium was 1.68% (w/v), and therefore almost all the starch was fermented completely.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.179-186
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.48-58
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• 1997

[ $CuInTe_2$ ] synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of $CuInTe_2$ were grown with the vertical Bridgman technique. The photoconductivity and photoluminescence of the crystals were measured in the temperature range 20 to 293 K. From the photocurrent peaks measured for the samples both perpendicular and parallel to c-axis, the energy band gaps of the samples were found to be 0.948 eV and 0.952 eV at room temperature respectively. The energy difference of the photocurrent and photoluminescence peaks of the samples both perpendicular and parallel to the c-axis measured at room temperature was a phonon energy, and its values were 22.12 meV and 21.4 meV respectively. The splitting of the valence band due to spin-orbit and crystal field interaction was calculated from the photocurrent spectra of the samples, The ${\Delta}cr\;and\;{\Delta}so$ are 0.046,0.014 eV respectively.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.135-140
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• 2011

By investigating photoluminescence (PL) spectra (20 K) of undoped and Be-doped p-type GaSb/GaAs epilayers, the origin has been analyzed by the change due to doping density. We have observed that the PL peak shifts to higher energy and the full-width half-maximum (FWHM) decreases with increasing the doping density below ${\sim}10^{17}cm^{-3}$, contrasted to shift to low energy and increasing FWHM above the density of ${\sim}10^{17}cm^{-3}$. From the variation of the integrated PL intensities of three peaks dissolved by Gaussian fit, it has been analyzed that, as the density increases, the $Be[Be_{Ga}]$ acceptor level (0.794 eV) reduces, whereas the intrinsic defect of $A[Ga_{Sb}]$ (0.778 eV) enhances together with a new $Be^*$ level (0.787 eV) locating between A and Be. We have discussed that it is due to coexistence of the Be acceptor level (${\Delta}E=16meV$) and the complex level (${\Delta}E=23meV$), $Be^*[Ga_{Sb}-Be_{Ga}]$combined by Be and A, in Be-doped p-GaSb, and that the level density of $Be[Be_{Ga}]$ may be reduced above ${\sim}10^{17}cm^{-3}$.

• Journal of the Korean Chemical Society
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• v.28 no.6
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• pp.361-365
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• 1984

The long-lived collision model has been applied to the resonant vibration-vibration energy exchange process $H^{79}$Br(v = 1) + $H^{81}Br$(v = 0) ${\to}$ $H^{79}Br$(v = 0) + $H^{81}Br$(v = 1) + ${\Delta}E\;=\;0.38 cm^{-1}$ The energy exchange probabilities have been calculated over the temperature range from 200 to 800K. They show negative temperature dependence (P ${\propto}\;T^{-1.8}$) and agree with the available experimental data better than those calculated from other theories.

• BMB Reports
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• v.56 no.12
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• pp.669-674
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• 2023

Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) infection leads to various clinical symptoms including anemia. Lipocalin-2 has various biological functions, including defense against bacterial infections through iron sequestration, and it serves as a biomarker for kidney injury. In a human protein array, we observed increased lipocalin-2 expression due to parental SARS-CoV-2 infection in the Calu-3 human lung cancer cell line. The secretion of lipocalin-2 was also elevated in response to parental SARS-CoV-2 infection, and the SARS-CoV-2 Alpha, Beta, and Delta variants similarly induced this phenomenon. In a Calu-3 implanted mouse xenograft model, parental SARSCoV-2 and Delta variant induced lipocalin-2 expression and secretion. Additionally, the iron concentration increased in the Calu-3 tumor tissues and decreased in the serum due to infection. In conclusion, SARS-CoV-2 infection induces the production and secretion of lipocalin-2, potentially resulting in a decrease in iron concentration in serum. Because the concentration of iron ions in the blood is associated with anemia, this phenomenon could contribute to developing anemia in COVID-19 patients.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.240-249
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• 2004

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.3
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• pp.439-445
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• 2008

In this paper, the preliminary EMC analysis process between the Communication, Ocean and Meteorological Satellite (COMS) and Geostationary Earth Orbit (GEO) launch vehicles in the frequency range [1MHz-47MHz] is described. The considered launch vehicles are arian V, sea Launch, land Launch, atlas III&V, delta IV, proton M/breeze M, soyuz, HII-A and Angara. The launch vehicle Radiated Emission (RE) specifications have been compared to COMS satellite Radiated Susceptibility (RS) limits. The COMS RS limits are the RS qualification levels of COMS units during launch. As a result, The radiated emission levels of arian V, sea launch, atlas III&V, delta IV, proton M/breeze M, HII-A and angara are compliant with COMS RS limits. The negative margins appear between land launch or soyuz launch vehicle RE and COMS RS. Then, if the land launch or soyuz is chosen by the customer, The tests should be performed at satellite level in order to demonstrate the compatibility with respect to launch vehicles specifications.