JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Optimization of InAlAs/InGaAs HEMT Performance for Microwave Frequency Applications and Reliability

  • Gupta, Ritesh (Semiconductor Device Research Laboratory, Department Electronic Science University of Delhi South Campus) ;
  • Aggarwal, Sandeep Kumar (Semiconductor Device Research Laboratory, Department Electronic Science University of Delhi South Campus) ;
  • Gupta, Mridula (Semiconductor Device Research Laboratory, Department Electronic Science University of Delhi South Campus) ;
  • Gupta, R.S. (Semiconductor Device Research Laboratory, Department Electronic Science University of Delhi South Campus)
  • Published : 2004.09.30
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Abstract

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.

Keywords

References

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