• Solar Energy
• /
• 제10권3호
• /
• pp.46-52
• /
• 1990

Novel a-Si solar cells with delta-doped(${\delta}x$-doped) P-layer have been fabricated to enhance the hole concentration of the P-layers. The ${\delta}-$doped P-layer consists of very thin B sheets of 0.1-0.5 atomic layers and undoped a-SiC multi-layers. B-layers were prepared by photo-CVD and pyrolysis technique. The structural, optical and electrical characteristics of the delta-doped P-layer films were evaluated by means of FTIR, AES and SIMS. As the results of this study, it was found that the ${\delta}$-doped P-layer showed much superior optical and electrical characteristics than those of conventional uniformly B-doped a-Si layers. 12.5% energy conversion efficiency was achieved for the Cell with ${\delta}$-doped P-layer.

• Transactions on Electrical and Electronic Materials
• /
• 제11권1호
• /
• pp.37-41
• /
• 2010

The authors investigated the photoluminescence (PL) and the electron paramagnetic resonance (EPR) from an magnesium (Mg)-doped GaN thin film with a delta-doped layer. The regularly doped sample shows a PL peak at 2.776 eV for the as-grown sample, and the peak shifts to 2.904 eV and increases in intensity for the annealed sample. The delta-doped sample also shows the same PL peak as does the regularly doped sample. However, only the annealed delta-doped layer shows a sharp EPR with a small isotropic Lande g-factor, $g_{II}$, of 2.029. This resonance is attributed to the delta-doped layer, which forms a hole-bound Mg-N atomic structure instead of the $Mg_{Ga}-V_N$ defect complex, indicating that the delta-doped sample was not optically activated to form PL centers but was instead electrically activated to form a hole-bound state.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• 제34D권12호
• /
• pp.69-75
• /
• 1997

A Si-channle MESFET using .delta.-doped layers was designed and the considerable enhancement of the current driving capability of the device was observed by simulation. The channel consists of double .delta.-doped layers separated by a low-doped spacer. Cariers are spilt from the .delta.-doped layers and are accumulated in the spacer. The saturation current is enhanced by the contribution of the carriers in the spacer. Among the design parameters that affect the peformance of the device, the thickness of the spacer and the ratio of the doping concentrations of the two .delta.-doped layers were studied. The spacer thickenss of 300~500.angs. and the doping ratio of 3~4 were shown to be the optimized values. The saturation current was observed to be increased by 75% compared with a bulk-channel MESFET. The performances of transconductance, output resistance, and subthreshold swing were also enhanced.

• Proceedings of the IEEK Conference
• /
• 대한전자공학회 1998년도 추계종합학술대회 논문집
• /
• pp.541-544
• /
• 1998

A SiGe p-channel MESFET using $\delta-doped$ layers is designed and the considerable enhancement of the current driving capability of the device is observed from the result of simulation. The channel consists of double $\delta-doped$ layers separated by a low-doped spacer which consists of Si and SiGe. A quantum well is formed in the valence band of the Si/SiGe heterojunction and much more holes are accumulated in the SiGe spacer than those in the Si spacer. The saturation current is enhanced by the contribution of the holes inthe spacer. Among the design parameters that affect the performance of the device, the thickness of the SiGe layer and the Ge composition are studied. The thickness of $0~300\AA$ and the Ge composition of 0~30% are investigated, and the saturation current is observed to be increased by 45% compared with a double $\delta-doped$ Si p-channel MESFET.

• Transactions on Electrical and Electronic Materials
• /
• 제5권5호
• /
• pp.173-179
• /
• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• Proceedings of the IEEK Conference
• /
• 대한전자공학회 1998년도 추계종합학술대회 논문집
• /
• pp.537-540
• /
• 1998

A MESFET device with double $\delta-doped$ channel is designed and investigated by computer simulation. The device with optimized design parameters such as a doping ratio and a spacer thickness, shows superior performance to conventional MESFETs. The effects of the FWHM of $\delta-doped$ layers device characteristics are investigated to account for the thermal process

• Journal of the Korean Institute of Telematics and Electronics A
• /
• 제32A권12호
• /
• pp.142-148
• /
• 1995

Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.

• The Korean Journal of Ceramics
• /
• 제4권2호
• /
• pp.156-161
• /
• 1998

We have measured changes of the non-stoichiometry, $\Delta\delta$, in Fe-doped nicked oxide , by thermogravimetry for four iron fractions, x=0.01, 0.031, 0.057 and 0.10, and three temperatures, T=1273, 1373 and 1473 K. The obtained data can be modelled by a defect structure in which substitutional trivalent iron ions, FeNi, are compensated by cation vacancies, $V_{Ni}$", and (4:1)-clusters. These clusters consist of tetravalent interstitial iron, $Fe_i\;^4$

• Proceedings of the Materials Research Society of Korea Conference
• /
• 한국재료학회 2004년도 춘계학술발표대회 및 제6회 신소재 심포지엄
• /
• pp.72-72
• /
• 2004

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제4권3호
• /
• pp.240-249
• /
• 2004

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.