• 한국통신학회논문지
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• 제17권11호
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• pp.1290-1298
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• 1992

본 논문은 fitting 파라미터를 배제하고 2차원적 Poisson 방정식을 도출해서 short-channel MOSFET의 model 식을 완전히 해석적으로 성립시켰다. 이로 인해 포화영역, 문턱전압, 강반전에 대한 것이 동시에 표현되는 정확한 드레인 전류가 유도되었다. 더욱이 이 model은 short-channel과 body효과, DIBL효과, 그리고 carrier운동에 대한 것도 설명할 수 있으며 온도와 $n^+$접합, 산화층에 관련되는 문턱전압도 표현할 수 있었다.

• 대한전자공학회논문지SD
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• 제40권9호
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• pp.638-643
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• 2003

Channel width dependence of hot-carrier effect in nMOSFET with shallow trench isolation is analyzed. $I_{sub}$- $V_{G}$ and $\Delta$ $I_{ㅇ}$ measurement data show that MOSFETs with narrow channel-width are more susceptible to the hot-carrier degradation than MOSFETs with wide channel-width. By analysing $I_{sub}$/ $I_{D}$, linear $I_{D}$- $V_{G}$ characteristics, thicker oxide-thickness at the STI edge is identified as the reason for the channel-width dependent hot-carrier degradation. Using the charge-pumping method, $N_{it}$ generation due to the drain avalanche hot-carrier (DAHC) and channel hot-electron (CHE) stress are compared. are compared.

• The Korean Journal of Physiology and Pharmacology
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• 제26권5호
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• pp.397-404
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• 2022

Fesoterodine, an antimuscarinic drug, is widely used to treat overactive bladder syndrome. However, there is little information about its effects on vascular K⁺ channels. In this study, voltage-dependent K⁺ (Kv) channel inhibition by fesoterodine was investigated using the patch-clamp technique in rabbit coronary artery. In whole-cell patches, the addition of fesoterodine to the bath inhibited the Kv currents in a concentration-dependent manner, with an IC₅₀ value of 3.19 ± 0.91 μM and a Hill coefficient of 0.56 ± 0.03. Although the drug did not alter the voltage-dependence of steady-state activation, it shifted the steady-state inactivation curve to a more negative potential, suggesting that fesoterodine affects the voltage-sensor of the Kv channel. Inhibition by fesoterodine was significantly enhanced by repetitive train pulses (1 or 2 Hz). Furthermore, it significantly increased the recovery time constant from inactivation, suggesting that the Kv channel inhibition by fesoterodine is use (state)-dependent. Its inhibitory effect disappeared by pretreatment with a Kv 1.5 inhibitor. However, pretreatment with Kv2.1 or Kv7 inhibitors did not affect the inhibitory effects on Kv channels. Based on these results, we conclude that fesoterodine inhibits vascular Kv channels (mainly the Kv1.5 subtype) in a concentration- and use (state)-dependent manner, independent of muscarinic receptor antagonism.

• 한국유통학회지:유통연구
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• 제1권1호
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• pp.83-107
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• 1996

The concern of external environment is growing up in the field of channel distribution. In the former channel distribution, the channel distribution environment is little bit unmoveable owing to a powerful manufacture control against poor distributor. Therefore intra-efficiency is channel member's core interest. The structure of channel governance, however, come to be changable because of the mature distributor power against manufacturer such as a Price Break, JIT of channel governance, and a serial of change. Accordingly, it is acceptable that the interest of external-environment of channel members' is more and more enlarged, and external-environment change in the channel distribution make the serious problems in intraorganizational system. Thus, it is meaningful that this study try to discover the consumer power as external environment factor and to find the best strategy to overcome this consumer power. Resource dependence theory, Transaction cost theory, Political Economic Approach, and Working partnership Approach are the theory foundation of the reasearch. Apparel franchise is a sample to analyse the hypothesis and correlation and multi-regression are a chief tools to estimate the hypothesis. Thus, the above results imply that a flexible governance is appropriate to consumer power, conflict is not intervening value between consumer power and channel governance, and the channel member's satisfaction can be confirmed in the flexible governance better than control governance.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.655-661
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• 2013

In this paper, the 1/f noise characteristics of n-channel MOSFET (NMOSFET) and p-channel MOSFET (PMOSFET) are analyzed in depth as a function of body bias. The normalized drain current noise, $S_{ID}/I_D{^2}$ showed strong dependence on the body bias in the sub-threshold region for both NMOSFET and PMOSFET, and NMOSFET showed stronger dependence than PMOSFET on the body bias. On the contrary, both of NMOSFET and PMOSFET do not exhibit the dependence of $S_{ID}/I_D{^2}$ on body bias in strong inversion region, although the noise mechanisms of two MOSFETs are different from each other.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.77-78
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• 2009

We report numerical simulations to investigate of the dependence of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of 10um, but varying the channel width W from 5nm to 5um, and thickness t from 10nm to 30nm. We have shown that $Q_{ON}/Q_{OFF}$ drastically decreases (from ${\sim}2.9{\times}10^4$ to ${\sim}9.8{\times}10^3$) as the channel thickness increases (from 10nm to 30nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed than that in the bottom of control channel.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.799-805
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• 1996

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of device characteristics due to the process parameters. In this paper, we used process simulator and device characteristics caused by process parameter variation. From this simulation, it has been ' derived to the dependence relations between process parameters and device characteristics. The experimental result of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.718-722
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• 2006

The dependence of n-channel 2 shot SLS poly-Si TFT characteristics on the DOS (density of states) parameters was investigated by using a device simulation. Device performances were most sensitive to the DOS of poly-Si/gate insulator (GI) interface and poly-Si active layer. Deep level states at the poly-Si/GI interfaces strongly affect the subthreshold slope.

• 한국생물물리학회:학술대회논문집
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• 한국생물물리학회 2002년도 제9회 학술 발표회 프로그램과 논문초록
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• pp.19-19
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• 2002

The gating kinetics of an inward-rectifier K$\^$＋/ channel, ROMK2 (Kir1.lb), were described by a model having one open state and two closed states. The long closed state was abolished by EDTA, suggesting that it was due to block by divalent cations. These closures exhibit a biphasic voltage-dependence, implying that the divalent blockers can permeate the channel.(omitted)

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 춘계학술발표회
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• pp.43-44
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• 1993

In this study SOI MOSFET model of the structure with 4-terminals and 3-interfaces is proposed. An SOI MOSFET is modeled with the equivalent circuit considered the interface capacitances. Parameters of SOI MOSFET device are extracted, and the electrical characteristics due to back-bias change is simulated. In SOI-MOSFET model device we describe the characteristics of threshold voltage, subthreshold slope, maxium electrical field and drain currents in the front channel when the back channel condition move into accmulation, depletion, and inversion regions respectively.