Simulation of channel dimension dependent conduction and charge distribution characteristics of silicon nanowire transistors using a quantum model

양자모델을 적용한 실리콘 나노선 트랜지스터의 채널 크기에 따른 전도 및 전하분포 특성 시뮬레이션

We report numerical simulations to investigate of the dependence of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of 10um, but varying the channel width W from 5nm to 5um, and thickness t from 10nm to 30nm. We have shown that $Q_{ON}/Q_{OFF}$ drastically decreases (from ${\sim}2.9{\times}10^4$ to ${\sim}9.8{\times}10^3$) as the channel thickness increases (from 10nm to 30nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed than that in the bottom of control channel.