A study on process parameter extraction and device characteristics of nMOSFET using DTC method

DTC방법을 사용한 nMOSFET의 공정파라메터 추출 및 소자특성에 관한 연구

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of device characteristics due to the process parameters. In this paper, we used process simulator and device characteristics caused by process parameter variation. From this simulation, it has been ' derived to the dependence relations between process parameters and device characteristics. The experimental result of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.