• Title/Summary/Keyword: bumping

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Novel Low-Volume Solder-on-Pad Process for Fine Pitch Cu Pillar Bump Interconnection

  • Bae, Hyun-Cheol;Lee, Haksun;Eom, Yong-Sung;Choi, Kwang-Seong
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.2
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    • pp.55-59
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    • 2015
  • Novel low-volume solder-on-pad (SoP) process is proposed for a fine pitch Cu pillar bump interconnection. A novel solder bumping material (SBM) has been developed for the $60{\mu}m$ pitch SoP using screen printing process. SBM, which is composed of ternary Sn-3.0Ag-0.5Cu (SAC305) solder powder and a polymer resin, is a paste material to perform a fine-pitch SoP in place of the electroplating process. By optimizing the volumetric ratio of the resin, deoxidizing agent, and SAC305 solder powder; the oxide layers on the solder powder and Cu pads are successfully removed during the bumping process without additional treatment or equipment. The Si chip and substrate with daisy-chain pattern are fabricated to develop the fine pitch SoP process and evaluate the fine-pitch interconnection. The fabricated Si substrate has 6724 under bump metallization (UBM) with a $45{\mu}m$ diameter and $60{\mu}m$ pitch. The Si chip with Cu pillar bump is flip chip bonded with the SoP formed substrate using an underfill material with fluxing features. Using the fluxing underfill material is advantageous since it eliminates the flux cleaning process and capillary flow process of underfill. The optimized interconnection process has been validated by the electrical characterization of the daisy-chain pattern. This work is the first report on a successful operation of a fine-pitch SoP and micro bump interconnection using a screen printing process.

Investigation on the $8{\times}8$ ReadOut IC for Ultra Violet Detector (UV 검출기 제작을 위한 $8{\times}8$ ReadOut IC에 관한 연구)

  • Kim, Joo-Yeon;Kim, Tae-Geun
    • Journal of the Institute of Electronics Engineers of Korea TE
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    • v.42 no.3
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    • pp.45-50
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    • 2005
  • A UV camera is being used in various application regions such as industry, medical science, military, and environment monitoring. A ROIC(ReadOut IC) is developed and can read the responses from UV photodiode sensors which are made with III-V nitride semiconductors of GaN series haying high resolution and high efficiency. To design FPA(Focal Plane Array) UV $8{\times}8$ ROIC, the photodiode type sensor devices are modeled as the capacitor type ones. The ROIC reads out signals from the detector at)d outputs sequentially pixel signals after amplifying and noise filtering of them. The ROIC is fabricated using the $0.5{\mu}m$ 2Poly 3Metal N-well CMOS process. And then, it and photodiode array are hybrid bonded by gold stud bumping process using ACP(Anisotropic Conductive Paste). After the packaging, UV images appearing on PC verified the operations of the ROIC.

Finding on Preventive Intervention of Fatal Occupational Injuries Through Empirical Analysis of Accident Death (사고사망자의 심층적 실증분석을 통한 예방적 개입점 발견 연구)

  • Yi, Kwan Hyung;Rhee, Hong Suk
    • Journal of the Korean Society of Safety
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    • v.34 no.3
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    • pp.83-88
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    • 2019
  • The 7,993 cases of Survey Report of Fatal Industrial Accidents conducted jointly by the MEOL and the KOSHA for the recent seven years(2007-2013) were categorized according to personal and occupational characteristics, industry types, business sizes, job types, activities at the time accident, types of accidents, material agents(assailing materials), unsafe conditions, and unsafe acts. And it is found that among the 72.2 percent of fatal occupational accidents in the construction and manufacturing industries are caused by falling, sticking, bumping and being caught under objects & overturning. For this study, through the empirical analysis on causes of fatal industrial accidents, was used to identity high risk groups based on total data of 7,993 victims of occupational accidents. An annual fatal occupational injury (FOI) rate per 10,000 workers was about 0.47‱. The middle-aged group and the elderly group showed the highest FOI rates per 10,000 workers (0.73‱, 0.80‱), and the daily workers showed the highest FOI rate (1.46‱), and the craft and related trades workers showed the highest FOI rate (2.17‱). In case of industry type the mining industry (7.26‱) showed the highest FOI rate, followed by the sewerage, waste management, materials recovery and remediation activity industry (3.91‱) and the construction industry (2.71‱). The primary high risk target group that requires a strategy designed to reduce fatal occupation injuries caused by falling and bumping & contact(collision) is the construction industry, and the secondary high risk target group in the construction industry is classified as the equipment, machine operating and assembling workers in the construction industry, those aged 50 years old and above need the prevention measures against bumping & contact(collision) and being caught under an object & falling(objects), while those aged less than 50 years old need prevention measures against falling(persons).

Copper Filling to TSV (Through-Si-Via) and Simplification of Bumping Process (비아 홀(TSV)의 Cu 충전 및 범핑 공정 단순화)

  • Hong, Sung-Jun;Hong, Sung-Chul;Kim, Won-Joong;Jung, Jae-Pil
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.3
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    • pp.79-84
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    • 2010
  • Formation of TSV (Through-Si-Via) with an Au seed layer and Cu filling to the via, simplification of bumping process for three dimensional stacking of Si dice were investigated. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process using $SF_6$ and $C_4F_8$ plasmas alternately. The vias were 40 ${\mu}m$ in diameter, 80 ${\mu}m$ in depth, and were produced by etching for 1.92 ks. On the via side wall, a dielectric layer of $SiO_2$ was formed by thermal oxidation, and an adhesion layer of Ti, and a seed layer of Au were applied by sputtering. Electroplating with pulsed DC was applied to fill the via holes with Cu. The plating condition was at a forward pulse current density of 1000 mA/$dm^2$ for 5 s and a reverse pulse current density of 190 mA/$dm^2$ for 25 s. By using these parameters, sound Cu filling was obtained in the vias with a total plating time of 57.6 ks. Sn bumping was performed on the Cu plugs without lithography process. The bumps were produced on the Si die successfully by the simplified process without serious defect.

SCHENSTED INSERTION AND DELETION ALGORITHMS FOR SHIFTED RIM HOOK TABLEAUX

  • Lee, Jaejin
    • Korean Journal of Mathematics
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    • v.14 no.1
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    • pp.125-136
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    • 2006
  • Using the Bumping algorithm for the shifted rim hook tableaux described in [5], we construct Schensted insertion and deletion algorithms for shifted rim hook tableaux. This may give us the combinatorial proof for the orthogonality of the second kind of the spin characters of $S_n$.

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