• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.5
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• pp.24-29
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• 1993

The national standards of microwave power in X-band and Ku-band were established using the waveguide microcalorimeters and have been disseminated to the related industries to contribute to industrial development. Through the comparisons and analysis of the measured effective efficiencies for waveguide thermistor mounts in the recent years, the accuracy for maintenance of power standards was confirmed.

• The Journal of Korean Physical Therapy
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• v.29 no.4
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• pp.164-168
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• 2017

Purpose: Functional electrical stimulation (FES) is a device that activates the sensorimotor cortex through electrodes attached to the surface of the skin. However, it is difficult to expect positive changes if the recipient is not attentive to the motion. To complement the perceived cognitive limitations of FES, we attempted to investigate the changes of sensorimotor cortex activity by simultaneously providing action observation with FES. Methods: Electroencephalogram was measured in 28 healthy volunteers. Relative band power over the sensorimotor cortex was analyzed and compared in three conditions: during rest, during FES alone, during action observation with FES. Results: The results showed significant differences in each relative band power. Relative alpha power and relative beta power were the lowest by application of FES combined with action observation, while the relative gamma power was the highest. Conclusion: These results suggest that combining FES with observation could be more effective than FES alone in neurorehabilitation.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.3
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• pp.168-173
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• 2018

In this paper, an auxiliary power supply (APS) for railroad cars is proposed. The APS can reduce the number of devices required to supply power through structural modification and operates at a high switching frequency by application of a SiC device. The voltage stress on the device in the proposed circuit can be reduced to less than half of the input voltage of the system; thus, a device with low breakdown voltage can be designed. By adapting a SiC device instead of an IGBT device, the proposed circuit can reduce switching and conduction losses and operate at a high switching frequency, thereby reducing output voltage and inductor current ripples in the proposed circuit. The theoretical analysis results of the proposed APS are verified with a 40 kW computer-based simulation and a 2 kW experiment.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.6
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• pp.27-27
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• 2002

In this paper, the LPA(Linear Power Amplifier) using new analog feedforward linearizer for IMT-2000 frequency band(2110MHz∼2170MHz) is proposed and fabricated. The designed analog feedforward linearizer system possessing the characteristics of stable operation for input power variation is simple structure and small size. When two-tones in IMT-2000 frequency band are applied to an amplifier, this LPA have the average output power is about 30W and the IMD value is below about 60dBc without correcting the circuit. In camparision with an amplifier without feedforward system at the same output power, the supposed analog feedforward linear amplifier posseses improved the IMD characteristics of over 23dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.6
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• pp.285-291
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• 2002

In this paper, the LPA(Linear Power Amplifier) using new analog feedforward linearizer for IMT-2000 frequency band(2110MHz∼2170MHz) is proposed and fabricated. The designed analog feedforward linearizer system possessing the characteristics of stable operation for input power variation is simple structure and small size. When two-tones in IMT-2000 frequency band are applied to an amplifier, this LPA have the average output power is about 30W and the IMD value is below about 60dBc without correcting the circuit. In camparision with an amplifier without feedforward system at the same output power, the supposed analog feedforward linear amplifier posseses improved the IMD characteristics of over 23dB.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1345-1347
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• 2008

This paper described a method of determining whether arcing is present in a low-voltage wiring system. We simulated the series arcing that generated in electrical loads and fabricated a arc detection module which can discriminate between normal and arcing state. The module consists of a high-pass filter with a low cut-off frequency of 3 kHz to attenuate power frequency voltage and an active band-pass filter with a frequency of 4 kHz ${\sim}$ 8 kHz to detect series arc signals only. We tested an Incandescent lamp that was controlled by a dimmer and analysed. The module consists of a high-pass filter with a low cut-off frequency of 3 kHz to attenuate power frequency voltage by 80 dB and an active band-pass filter with a frequency of 4 kHz to detect series arc signals only. From the experimental results, we could detect series arc signals without an influence of non-linear loads.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.38-39
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• 2017

This paper proposes a new control method for an AC-DC Buck converter which is utilized as a front-end converter of a 2-stage high power density adapter. In the conventional adapter applications, 2-stage configuration shows higher power transfer efficiency and higher power density than those of the single stage flyback converter. In the 2-stage AC-DC converter, the boost converter is widely used as a front-end converter. However, an efficiency variation between high AC line and low AC line is large. On the other hand, the proposed conduction band control method for a buck front-end converter has an advantage of small efficiency variation. In the proposed control method, switching operation is determined by a band control voltage which represents output load condition, and an AC line voltage. If the output load increasesin low AC line, the switching operation range is expanded in half of line cycle. On the contrary, in light load and high line condition, the switching operation is narrowed. Thus, the proposed control method reduces switching loss under high AC line and light load condition. A 60W prototype which is configured the buck and LLC converter with the proposed control method is experimented on to verify the validity of the proposed system. The prototype shows 92.16% of AC-DC overall efficiency and 20.19 W/in 3 of power density.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.4
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• pp.440-446
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• 2011

In this paper, a X-band 50 W pulsed solid state power amplifier(SSPA) is designed and fabricated for radar systems. The SSPA consists of a driver amplifier, a high power amplifier, and a pulse modulator. The high power stage employes four 25 W GaAs FET to deliver 50 W at X-band. To meet the stringent target specification for the SSPA, we used a new hybrid pulse switching method, which combine the advantage of pulse modulation and bias switching method. The fabricated SSPA shows a power gain of 44.2 dB, an output power of 50 W over a 1.12 GHz bandwidth. Also, pulse droop < 1 dB meet the design goals and a rise/fall time is less than 12.45 ns. Fabricated X-band pulsed SSPA size is compact with overall size of $150{\times}105{\times}30\;mm^3$.

• Journal of IKEEE
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• v.20 no.3
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• pp.279-284
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• 2016

This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm. This paper presents a two stage L-band power amplifier realized with a $0.32{\mu}m$ Silicon-On-Insulator (SOI) CMOS technology. To overcome a low breakdown voltage limit of MOSFET, stacked-FET structures are employed, where three transistors in the first stage amplifier and four transistors in the second stage amplifier are connected in series so that their output voltage swings are added in phase. The stacked-FET structures enable the proposed amplifier to achieve a 21.5 dB small-signal gain and 15.7 dBm output 1-dB compression power at 1.9 GHz with a 122 mA DC current from a 4 V supply. The amplifier delivers a 19.7 dBm saturated output power with a 16 % maximum Power Added Efficiency (PAE). A bond wire fine tuning technology enables the amplifier a 23.67 dBm saturated output power with a 20.4 % maximum PAE. The die area is $1.9mm{\times}0.6mm$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.12
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• pp.7309-7316
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• 2014

In this paper, a triple-band multiplexer using a microstrip transmission line was designed and fabricated to make use of a low power portable base station. This multiplexer was used in the triple-band including the cellular, WCDMA and LTE mobile frequency band, and designed to have an insertion loss of 0.8 dB, low SWR of 1.5 in the passband and a band rejection of 15 dB in the stopband. From the measured results obtained by a confidence test for the fabricated multiplexer samples, the maximum insertion loss and SWR of the fabricated multiplexer samples in all passbands of 824-894MHz, 1920-2170 MHz and 2500-2600 MHz were below 0.71 dB and 1.38, and the attenuations in the stopbands were better than 15 dB. Therefore, the triple-band multiplexer has good performance and satisfies the design specifications.