• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.139-142
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• 2007

Organic field-effect transistor (FET) based on a copper Phthalocyanine (CuPc) material as an active layer and a $SiO_2$ as a gate insulator were fabricated and analyzed. We measured the typical FET characteristics of CuPc in air. The electrical characteristics of the CuPc FET device were analyzed by a Maxwell-Wagner model. The Maxwell-Wagner model employed in analyzing double-layer dielectric system was helpful to explain the C-V and I-V characteristics of the FET device. In order to further clarity the channel formation of the CuPc FET, optical second harmonic generation (SHG) measurement was also employed. Interestingly, SHG modulation was not observed for the CuPc FET. This result indicates that the accumulation of charge from bulk CuPc makes a significant contribution.

• Korean journal of food and cookery science
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• v.27 no.3
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• pp.51-57
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• 2011

Color, lipid and fatty acid composition, and tocopherols and polyphenols contents of perilla seed lipids in response to seed germination were studied. Perilla seeds were germinated at $30^{\circ}C$ in the dark for 12, 36, or 48 h, after which total lipids were extracted by the Folch method using chloroform and methanol (2:1, v/v). Seed germination resulted in a decrease in yellowness and greenness in perilla seed lipids, but there were no significant changes in composition of the lipids including major neutral lipids (>90%). Contents of phosphatidylcholine and phosphatidylethanolamine in the perilla seed lipids significantly increased in response to germination. Linolenic acid (>63%) was the most abundant fatty acid. Seed germination tended to decrease the relative content of linolenic acid and increase the contents of oleic and stearic acids. Contents of antioxidants, especially ${\alpha}$-tocopherol and polyphenols, increased in response to seed germination. As the germination period was extended, the antioxidant content increased. Therefore, increases in useful components, phosphatidylcholine, phosphatidylethanolamine, ${\alpha}$-tocopherol, and polyphenols contents by seed germination can contribute to the improvement of perilla seed utilization in food industry.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.3
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• pp.166-173
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• 2009

The reliability of hafnium oxide gate dielectrics incorporating lanthanum (La) is investigated. nMOSFETs with metal/La-doped high-k dielectric stack show lower $V_{th}$ and $I_{gate}$, which is attributed to the dipole formation at the high-k/$SiO_2$ interface. The reliability results well correlate with the dipole model. Due to lower trapping efficiency, the La-doping of the high-k gate stacks can provide better PBTI immunity, as well as lower charge trapping compared to the control HfSiO stacks. While the devices with La show better immunity to positive bias temperature instability (PBTI) under normal operating conditions, the threshold voltage shift (${\Delta}V_{th}$) at high field PBTI is significant. The results of a transconductance shift (${\Delta}G_m$) that traps are easily generated during high field stress because the La weakens atomic bonding in the interface layer.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.171-171
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• 1999

We studied the charge redistribution in the Pt-M (M=Cu, Co) alloys by X-ray Absorption Near Edge Spectroscopy(XANES) and X-ray Photoelectron Spectroscopy(XPS). These analysis tools provide us information about the charge transfer in the valence band of intermetallic bonding. The samples were prepared by arc-melting method. After annealing this samples in vacuum for several hours, we cold get the ordered samples, which were confirmed with XRD analysis. the core and valence level energy shift in these system were investigated by Mg $K\alpha$(1253.6eV) x-ray source for Pt-Co alloys and monochromatized Al $K\alpha$ (1486.6eV) for Pt-Cu alloys. Pt L2, L3-edge, and Cu, Co K-edge XANES spectra were measured with the total electron-yield mode detector at the 3Cl beam line of the PLS (Pohang light source0. from the changes of White line (WL) area and the core level shifts of the each metal sites, we can obtain the information about the electrons participating in the intermetallic bonding of the Pt-Cu and Pt-Co alloys.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.119-119
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• 1999

GaN-based 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자가 상용화되었을 뿐만아니라 HBT, FET와 같은 전기소자로도 널리 응용될 시점이지만 아직까지 해결되지 않은 문제점들이 있다. 그 중에 하나가 바로 GaN의 격자상수와 일치하는 기판이 없어 발생하는 dislocation인데, 이를 해결하기 위한 방법으로 새로운 기판이나, buffer, 또는 새로운 성장방법(ELOG) 등을 시도하고 있으나 dislocation density는 아직 높은 (107~1010cm-2) 상태이다. 이에 본 연구에서는 dislocation을 줄이기 위한 방책으로 InxGa1-xN를 새로운 buffer층으로 사용하여 GaN 박막을 MBE 방법으로 성장하였다. InxGa1-xN를 선택한 이유는 GaN와의 격자상수차이가 In0.12Ga0.88N일 경우 거의 일치한다는 보고가 있으며, 특히 InGaN의 melting point는 GaN의 성장온도 보다는 약간 높기 때문에 GaN 박막을 성장할 때와 식힐 때의 InGaN 원자결합은 약하게 작용되며, 결국 이는 열적인 stress를 줄여주게 된다. 이와 같이 성장된 GaN 박막은 그 결정성을 XRD로 분석하였고, 표면과 계면을 SEM으로 관찰하였다. 그리고 그 광학적 특성을 저온 PL로서 조사하였다. 그 결과를 살펴보면 35$^{\circ}$ 근방에서 GaN(0002) peak가 나온 것으로 보아 wurtzite 구조가 성장됨을 XRD로부터 확인하였다. 그리고 저온 (12K) PL에서는 3.470eV의 D$^{\circ}$X peak뿐만 아니라 3.258eV에 해당하는 peak를 얻었는데, 이는 InxGa1-xN buffer layer의 vapour pressure가 높은 (<50$0^{\circ}C$)에 도달하게 됨으로써 dissociation이 일어나면서 초기 성장이 이루어졌고 이는 다시 계면에서의 inter-diffusion을 발생시킨 것으로 보여진다.

• Journal of Hydrogen and New Energy
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• v.24 no.5
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• pp.421-427
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• 2013

We report on the time dependent degradation of cell in dye-sensitized solar cells (DSSC). The photovoltaic performance of DSSC over a period of time was investigated in liquid electrolyte based on triiodide/iodide during six days. It was found that the short circuit current density ($j_{sc}$) of the cell dropped from 9.9 to $7mA/cm^2$ while efficiency (${\eta}$) of the cell decreased from 4.4 to 3.3%. The parameters corresponding to fundamental electronic and ionic processes in a working DSSC are determined from the electrochemical impedance spectrascopy (EIS) at open-circuit potential ($V_{oc}$). EIS study of the DSSC in the this work showed that the electron life time ${\tau}_r$ and chemical capacitance $C_{\mu}$ decreased significantly after six days. It was correlated the $j_{sc}$ and efficiency decreased after six days.

• Journal of Electrical Engineering and Technology
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• v.10 no.3
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• pp.1086-1092
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• 2015

The off-line and on-line partial discharge (PD) in the stator winding of three high-voltage (HV) motors (1,400 HP, 6.6 kV) is measured and analyzed in this paper. The off-line PD is measured at high values between 24,300 ~ 36,100 pC after 18 years of motor operation. Spare replacement motors were not available for testing the degree of deterioration of the stator windings in standstill status. Therefore, on-line periodic analysis was conducted to monitor the trend of PD after installing a ceramic sensor (110 pF, 6.6 kV) in the terminal box for each phase of each motor. In the stator winding of the No.1 and No.2 HV motors, which showed high magnitudes of off-line PD and low magnitudes of on-line PD, defects are expected to appear in the neutral end of the winding. On the contrary, in the stator windings of the No.3 HV motor, which exhibits high off-line and on-line PD magnitude, defects are expected to appear in the terminal end of the winding where a voltage close to the phase voltage is applied.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1154-1155
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• 2008

본 연구에서는 전자 주개 물질(electron donor)인 regioregular poly(3-hexylthiophene)(P3HT)와 전자 받개 물질(electron acceptor)인 phenyl-$C_{61}$-butyric acid methyl ester (PCBM)을 혼합한 복합 박막 구조(Bulk Heterojunction)를 이용하여 태양전지를 제작하고 광활성층(Active layer)의 두께를 변화시키면서 광학적 특성 및 전기적 특성에 대해 분석하였다. 광활성층의 두께가 두꺼워 질수록 광흡수율이 높기 때문에 태양전지의 효율이 증가하여 200nm정도의 두께에서 가장 좋은 특성을 보였으며, 그 이상의 두께에서는 광흡수율이 높더라도 직렬저항(Series resistance)의 증가로 개방 회로 전압이 감소하는 것을 볼 수 있었으며, 최적화된 광활성층의 두께(190nm)에서 개방 회로 전압($V_{oc}$)은 0.6V, 단락 회로 전류($J_{sc}$)는 8.29mA, Fill factor(FF)는 0.59, 전력변환효율($\eta$)은 2.94%였다.

• Journal of Drive and Control
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• v.13 no.3
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• pp.15-23
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• 2016

The direct-drive servo valve(DDV) is a kind of one-stage valve because the main spool valve is directly driven by the dc motor. Since the DDV structure is simple, it is less expensive, more reliable, and offers a reduced internal leakage and a reduced sensitivity to fluid contamination. The control system of the DDV is highly nonlinear due to a current limiter, a voltage limiter, and the flow-force effect on the spool motion. The shape of the step response of the DDV-control system varies considerably according to the magnitudes of the step input and the load pressure. The system-design requirements mean that the overshoots should be less than 20%, and the errors at 0.02s should be less than 2%, regardless of the reference-step input sizes of 1V and 5V and the load-pressure magnitudes of 0MPa and 20.7MPa. To satisfy the system-design requirements, the PID-controller parameters of $K_c$, $T_i$ and $T_d$, and the derivative-feedback gain of $K_{der}$ are designed using the root locus and manual tuning.

• Journal of Advanced Navigation Technology
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• v.9 no.2
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• pp.156-163
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• 2005

In this paper, we analyzed the performance of VDL mode 3 system model whose specification is defined by ICAO(International Civil Aviation Organization). For performance evaluation, we obtained BER(Bit Error Rate), transmission delay time, burst retransmission rate and throughput. From the analysis result, we could explicitly define relationships among BER, transmission delay time, throughput and burst restransmission rate. In addition, it became known that V/D retransmission rate and throughput are closely related in down link channel.