• Electrical & Electronic Materials
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• v.6 no.3
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• pp.248-254
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• 1993

Ca(Ti, V)O$_{3}$의 감습특성에 대하여 조사하였다. 시편의 임피던스는 V$_{2}$O$_{5}$의 치환량이 증가함에 따라 감소하며 1mol% V$_{2}$O$_{5}$를 치환한 시편이 가장 우수한 감도를 나타내었다. 전극물질은 감도에 영향을 미치며 Pt가 가장 적합하였다. 히스테리시스 현상은 거의 나타나지 않으며 감도는 분위기 온도 및 열처리에 안정하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.10
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• pp.4672-4678
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• 2013

Aluminum dross is formation at the surface of the molten metal as the latter reacts with the furnace atmosphere and it was an unavoidable by-product of the aluminum production process. However aluminum dross was usually landfilled or disposed without treatment, causing much environmental damage. The purpose of this study is to investigate the possibility of ceramic catalyst support using recycled Al dross. The recycled Al dross was made into SCR catalyst by mixing with $WO_3$, $V_2O_5$ and $TiO_2$. The $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR catalyst was observed with XRF, XRD and BET. $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR strength was measured by Universal Testing Machine(UTM). As the added $Al_2O_3$, streagth is increased. And the NOx removal activity was observed by MR(Micro-Reactor). The temperatures ranging from $350^{\circ}C$ and $400^{\circ}C$, $V_2O_5-WO_3/TiO_2-Al_2O_3$ SCR catalyst De-NOx performance result of showed excellent activity over 90% at application condition.

• Journal of the Korean Chemical Society
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• v.37 no.12
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• pp.1010-1018
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• 1993

The titanium oxide thin films were prepared by anodic oxidation. The Photo-electrochemical properties of the electrodes were studied in 1 M NaOH solution. The flat band potentials of $TiO_2$ electrodes prepared by anodic oxidation showed around -0.8V and the values were shifted 0.2V to the positive potential direction that of single crystal $TiO_2$. Reduction potential of oxygen by cyclic voltammetry showed around -0.95V vs. SCE and these reactions were processed totally irreversible. The photocurrent of electrodes were showed shorter wavelength than that of single crystal $TiO_2$ and its current density decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.561-565
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• 2002

The effects of sintering additives such as $Bi_2O_3$ and $V_2O_5$ on the microwave dielectric and sintering properties of (Zn, Mg)$TiO_3$ system were investigated. Highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature range of $870{\sim}900^{\circ}C$ with $Bi_2O_3$ and $V_2O_5$ additions of <1wt.%, respectively. The microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ with 0.45 wt.% $Bi_2O_3$ and 0.55 wt.% $V_2O_5$ sintered at $900^{\circ}C$ were as follows: $Q{\times}f_o$=56,800 GHz, ${\varepsilon}_r$=22, and ${\tau}_f=-53ppm/^{\circ}C$. In order to improve temperature coefficient of resonant frequency, $TiO_2$ was added to the above system. The optimum amount of $TiO_2$ was 15 mol.% when sintered at $870^{\circ}C$, at which we could obtain following results: $Q{\times}f_o$ = 32,800 GHz, ${\varepsilon}_r$ = 26, and $\tau_f=0ppm/^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.604-610
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• 2003

The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{\circ}C$ were as follows : Q$\times$ $f_{o}$ = 50,800 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -53 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{\circ}C$, at which we could obtain following results: Q$\times$ $f_{o}$ = 32,800 GHz, $\varepsilon$$_{r}$ = 26, and$\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.6
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• pp.1012-1016
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• 2008

[ $TiO_2-V_2O_5$ ] sol was fabricated using sol-gel method and $TiO_2-V_2O_5$ thin films were fabricated using dip-coating method. $V_2O_5$ sol was added 0.01mole, 0.03mole, 0.05mole into $TiO_2$ sol. As a results of crystalline properties, $V_2O_5$ peaks were not found in spite of $V_2O_5$ additive. Thickness of thin films increased $0.1{\sim}0.25{\mu}m$ every a dipping. Capacitance of thin films increased with increasing heat treatment temperature and it increased largest at $700^{\circ}C$. Capacitance of thin films decreased with increasing $V_2O_5$ additive and it increased largest at 0.01mole. Because adsorption time and desorption time of thin films was about 2 minutes 40 seconds and about 3 minutes 40 seconds respectively, adsorption time was faster about 1 minutes than desorption time.

• Journal of Environmental Science International
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• v.17 no.11
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• pp.1273-1279
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• 2008

This study examined the catalytic destruction of 1,2-dichlorobenzene on ${V_2}{O_5}/TiO_2$ nanoparticles. The ${V_2}{O_5}/TiO_2$ nanoparticles were synthesized by the thermal decomposition of vanadium oxytripropoxide and titanium. The effects of the synthesis conditions, such as the synthesis temperature and precursor heating temperature, were investigated. The specific surface areas of ${V_2}{O_5}/TiO_2$ nanoparticles increased with increasing synthesis temperature and decreasing precursor heating temperature. In addition, the removal efficiency of 1,2-dichlorobenzene was promoted by a decrease in heating temperature. However, the removal efficiency of 1,2-dichlorobenzene was decreased by an anatase to rutile phase transformation at temperatures $1,300^{\circ}C$.

• Environmental Engineering Research
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• v.10 no.5
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• pp.239-246
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• 2005

The effect of Pt addition over $V_2O_5-WO_3/TiO_2$ catalyst supported on PRO-66 was investigated for NO reduction in order to develop the catalytic filter working at low temperature. Catalytic filters, $Pt-V_2O_5-WO_3/TiO_2/PRD$, were prepared by co-impregnation of Pt, V, and W precursors on $TiO_2$-coated ceramic filter named PRD (PRD-66). Titania was coated onto the pore surface of the ceramic filter using a vacuum aided-dip coating method. The Pt-loaded catalytic filter shifted the optimum working temperature from $260-320^{\circ}C$(for the catalytic filter without Pt addition) to $190-240^{\circ}C$, reducing 700 ppm NO to achieve the $N_x$ slip concentration($N_x\;=\;NO+N_2O+NO_2+NH_3$) less than 20 ppm at the face velocity of 2 cm/s. $Pt-V_2O_5-WO_3/TiO_2$ supported on PRD showed the similar catalytic activity for NO reduction with that supported on SiC filter as reported in a previous study, which implies the ceramic filter itself has no considerable interaction for the catalytic activity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.963-967
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• 2001

The effects of the sintering additives such as Bi$_2$O$_3$and V$_2$O$_{5}$ on the microwave dielectric and sintering properties of ZnTiO$_3$system were investigated. Densities of >97% of the theoretical densities have been attained for ZnTiO$_3$at the sintering temperature range of 870~90$0^{\circ}C$ with Bi$_2$O$_3$and V$_2$O$_{5}$ additions of $_3$were obtained with 0.6wt% Bi$_2$O$_3$and 0.5wt% V$_2$O$_{5}$; Qxf$_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -43 PPm/$^{\circ}C$. In order to improve temperature coefficient of resonance frequency, TiO$_2$was added to the above system. The optimum amount of TiO$_2$was 15mo1% when sintered at 87$0^{\circ}C$, at which we could obtain following results ; Qxf$_{o}$ = 44,700 GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.>.EX>.>.>.EX>.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.30-36
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• 2002

The effects of the sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of ZnTi $O_3$ system were investigated. Highly dense samples were obtained for ZnTi $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of <1 wt.%, respectively. The microwave dielectric properties of ZnTi $O_3$ with 0.6 wt.% B $i_2$ $O_3$ and 0.5 wt.% $V_2$ $O_{5}$ were as follows: Qx $f_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$= 22, and $\tau$$_{f}$ = -43 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the abode system. The optimum amount of Ti $O_2$was 15 mol.% when sintered at 87$0^{\circ}C$, at which Ive could obtain following results: Qx $f_{O}$ = 44,700GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 PPm/$^{\circ}C$.>.EX>.>.>.EX>.>.>.