• Korean Journal of Remote Sensing
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• v.25 no.3
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• pp.271-285
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• 2009

Multi-temporal satellite imagery can be changed into a transform image that emphasizes the changed area only through the application of various change detection techniques. From the transform image, an automated change detection model calculates the optimal threshold value for classifying the changed and unchanged areas. However, the model can cause undesirable results when the histogram of the transform image is unbalanced. This is because the model uses a single threshold value in which the sign is either positive or negative and its value is constant (e.g. -1, 1), regardless of the imbalance between changed pixels. This paper proposes an advanced method that can improve accuracy by applying separate threshold values according to the increased or decreased range of the changed pixels. It applies multiple threshold values based on the cumulative producer's and user's accuracies in the automated binary change detection model, and the analyst can automatically extract more accurate optimal threshold values. Multi-temporal IKONOS satellite imagery for the Daejeon area was used to test the proposed method. A total of 16 transformation results were applied to the two study sites, and optimal threshold values were determined using accuracy assessment curves. The experiment showed that the accuracy of most transform images is improved by applying multiple threshold values. The proposed method is expected to be used in various study fields, such as detection of illegal urban building, detection of the damaged area in a disaster, etc.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.129-135
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• 2023

An analytical threshold voltage model is presented to observe the change in threshold voltage shift ΔV_th of a junctionless double gate MOSFET using ferroelectric-metal-SiO₂ as a gate oxide film. The negative capacitance transistors using ferroelectric have the characteristics of increasing on-current and lowering off-current. The change in the threshold voltage of the transistor affects the power dissipation. Therefore, the change in the threshold voltage as a function of theferroelectric thickness is analyzed. The presented threshold voltage model is in a good agreement with the results of TCAD. As a results of our analysis using this analytical threshold voltage model, the change in the threshold voltage with respect to the change in the ferroelectric thickness showed that the threshold voltage increased with the increase of the absolute value of charges in the employed ferroelectric. This suggests that it is possible to obtain an optimum ferroelectric thickness at which the threshold voltage shift becomes 0 V by the voltage across the ferroelectric even when the channel length is reduced. It was also found that the ferroelectric thickness increased as the silicon thickness increased when the channel length was less than 30 nm, but the ferroelectric thickness decreased as the silicon thickness increased when the channel length was 30 nm or more in order to satisfy ΔV_th=0.

• Journal of Korea Water Resources Association
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• v.36 no.5
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• pp.799-810
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• 2003

Hydrologic models generally require land surface analysis to different topographic parameters defined as direct or indirect input variables to the model. Specially GIS supply the these parameters from digital data set of land surface The sensitivity analysis to DEM(Digital Elevation Model) resolution and the threshold area are of GIS extracted digital data set applied GIUH(Geomorphological Instantaneous Unit Hydrograph)model is investigated. Also it is compared the responses of GIUH model as input data of stream networks from digital data set(blue line) of NGIS and those extracted from DEM of various grid sizes. The results shows that the GIUH model is significantly affected by the DEM resolution and threshold area. According to the results, DEM grid size is suitable from 25m to 50m. Also threshold area is in the range of 30%∼50% for exceedance probability.

• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• Journal of information and communication convergence engineering
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• v.9 no.3
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• pp.310-314
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• 2011

This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.

• Journal of information and communication convergence engineering
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• v.7 no.3
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• pp.361-365
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• 2009

This paper has been presented the transport characteristics of FinFET using the analytical potential model based on the Poisson's equation in subthreshold and threshold region. The threshold voltage is the most important factor of device design since threshold voltage decides ON/OFF of transistor. We have investigated the variations of threshold voltage and drain induced barrier lowing according to the variation of geometry such as the length, width and thickness of channel. The analytical potential model derived from the three dimensional Poisson's equation has been used since the channel electrostatics under threshold and subthreshold region is governed by the Poisson's equation. The appropriate boundary conditions for source/drain and gates has been also used to solve analytically the three dimensional Poisson's equation. Since the model is validated by comparing with the three dimensional numerical simulation, the subthreshold current is derived from this potential model. The threshold voltage is obtained from calculating the front gate bias when the drain current is $10^{-6}A$.

• Asian-Australasian Journal of Animal Sciences
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• v.15 no.8
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• pp.1085-1090
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• 2002

Genetic parameters for birth weights (BWT), calving ease scores observed from calves born by heifers (CEH), and calving ease scores observed from calves born by cows (CEC) were estimated using Bayesian methodology with Gibbs sampling in different threshold animal models. Data consisted of 77,458 records for calving ease scores and birth weights in Gelbvieh cattle. Gibbs samplers were used to obtain the parameters of interest for the categorical traits in two univariate threshold animal models, a bivariate threshold animal model, and a three-trait linear-threshold animal model. Samples of heritabilities and genetic correlations were calculated from the posterior means of dispersion parameters. In a univariate threshold animal model with CEH (model 1), the posterior means of heritabilities for calving ease was 0.35 for direct genetic effects and 0.18 for maternal genetic effects. In the other univariate threshold model with CEC (model 2), the posterior means of heritabilities of CEC was 0.28 for direct genetic effects and 0.18 for maternal genetic effects. In a bivariate threshold model with CEH and CEC (model 3), heritability estimates were similar to those in unvariate threshold models. In this model, genetic correlation between heifer calving ease and cow calving ease was 0.89 and 0.87 for direct genetic effect and maternal genetic effects, respectively. In a three-trait animal model, which contained two categorical traits (CEH and CEC) and one continuous trait (BWT) (model 4), heritability estimates of CEH and CEC for direct (maternal) genetic effects were 0.40 (0.23) and 0.23 (0.13), respectively. In this model, genetic correlation estimates between CEH and CEC were 0.89 and 0.66 for direct genetic effects and maternal effects, respectively. These estimates were greater than estimates between BWT and CEH (0.82 and 0.34) or BWT and CEC (0.85 and 0.26). This result indicates that CEH and CEC should be high correlated rather than estimates between calving ease and birth weight. Genetic correlation estimates between direct genetic effects and maternal effects were -0.29, -0.31 and 0.15 for BWT, CEH and CEC, respectively. Correlation for permanent environmental effects between BWT and CEC was -0.83 in model 4. This study can provide genetic evaluation for calving ease with other continuous traits jointly with assuming that calving ease from first calving was a same trait to calving ease from later parities calving. Further researches for reliability of dispersion parameters would be needed even if the more correlated traits would be concerned in the model, the higher reliability could be obtained, especially on threshold model with property that categorical traits have little information.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.4
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• pp.58-64
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• 1984

A simple model for the impurity profile in an ion-implanted channel layer of an enhancement type IGFET is assumed and a simple expression for the threshold voltage derived by using the assumed impurity profile is analyzed in detail. Also, this simple model is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel devices. The error range of threshold voltage between gaussian-profile and box-profile is calculated in this paper and a new method of calculating the depth of ion-implanted Baler D is also introduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.559-563
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• 2002

A threshold voltage model of SiC N-channel MOSFETs for high-temperature and hard radiation environments has been developed and verified by comparing with experimental results. The proposed model includes the difference in the work functions, the surface potential, depletion charges and SiC/$SiO_2$acceptor-like interface state charges as a function of temperature. Simulations of the model shoved that interface slates were the most dominant factor for the threshold voltage decrease as the temperature increase. To verify the model, SiC N-chnnel MOSFETS were fabricated and threshold voltages as a function of temperature were measured and compared wish model simulations. From these comparisons, extracted density of interface slates was $4{\times}10^{12}\textrm{cm}^{-2}eV^{-1}$.

• Journal of the Korean Data and Information Science Society
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• v.18 no.1
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• pp.237-245
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• 2007

Nonlinear asymmetric time series models have the growing interest in econometrics and finance. Threshold model is one of the successful asymmetric model. We consider a smooth transition ARMA model which converges a.s. to a threshold ARMA model and show that the smooth transition ARMA model admits a stationary measure, provided a suitable condition on the coefficients of the autoregressive parts of the different regimes is satisfied. Stationarity of a smooth transition GARCH model is also obtained.