Journal of information and communication convergence engineering

The Korea Institute of Information and Commucation Engineering (한국정보통신학회)
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Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function

  • Jung, Hak-Kee (Department of Electronic Engineering, Kunsan National University)
  • Received : 2011.04.12
  • Accepted : 2011.06.01
  • Published : 2011.06.30
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Abstract

This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.

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References

  1. W.Haensch, E.J.Nowak, R.H.Dennard, P.M.Solomon, A.Bryant, O.H.Dokumaci, A.Kumar, X.Wang, J.B.Johnson and M.V.Fischetti, "Silicon CMOS devices beyond scaling," IBM J.Res Develop., vol.50, no.4/5, pp.339-361, 2006. https://doi.org/10.1147/rd.504.0339
  2. Technology Roadmap on Semiconductors, 2007 edition, Semiconductor Industry Association. URL: http://public.itrs.net.
  3. G.Zhang, Z.Shao and K.Zhou,"Threshold voltage model for short channel FD-SOI MOSFETs with vertical Gaussian profile," IEEE Trans. Electron Devices, vol.55, pp.803-809, 2008. https://doi.org/10.1109/TED.2007.914832
  4. P.K.Tiwari,S.Kumar, S.Mittal, V.Srivastava, U.PandeyK and S.Jit,"A 2D Analytical Model of the Channel Potential and Threshold Voltage of Double-Gate(DG) MOSFETs With Vertical Gaussian Doping Profile," IMPACT-2009,pp.52-55,2009.
  5. Q.Chen, B.Agrawal and J.D.Meindl,"A Comprehensive Analytical Subthreshold Swing(S) Model for Double-Gate MOSFETs," " IEEE Trans. Electron Devices, vol.49, pp.1086-1090, 2002. https://doi.org/10.1109/TED.2002.1003757

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