• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.54-61
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• 2007

A variable gain low noise amplifier (VG-LNA) implemented in TSMC 0.18 um process is presented. This VG-LNA is designed of two stage amplifier, and its gain is controlled by the shunt feedback loop composed of a gain control transistor (GCT) and a coupling capacitor in second stage. The channel resistance of GCT in the shunt feedback loop influences the input and output stages of a second stage by the Miller effect. Total gain of the proposed VG-LNA is changed by two factors, the load impedance reduction and the interstage mismatch by controlling the channel resistance of the GCT. Consequently, by adding a shunt feedback with a gain control transistor, this proposed VG-LNA achieves both wide gain tuning range of 37 dB and continuous gain control simultaneously.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.11
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• pp.101-106
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• 2014

This paper presents a wide dynamic range radio-frequency (RF) root-mean-square (RMS) power detector using an automatic gain control (AGC) loop. The AGC loop consists of a variable gain amplifier (VGA), RMS conversion block and gain control block. The VGA exploits dB-linear gain characteristic of the cascade VGA. The proposed circuit utilizes full-wave squaring and generates a DC voltage proportional to the RMS of an input RF signal. The proposed RMS power detector operates from 500MHz to 5GHz. The detecting input signal range is from 0 dBm to -70 dBm or more with a conversion gain of -4.53 mV/dBm. The proposed RMS power detector is designed in a 65-nm 1.2-V CMOS process, and dissipates a power of 5 mW. The total active area is $0.0097mm^2$.

• Journal of IKEEE
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• v.15 no.4
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• pp.319-323
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• 2011

In this paper presents a new model of dual-mode synchronous buck converter with dynamic control for mobile applications was proposed. The proposed circuit can operate at 2.5MHz with supply voltage 2.5V to 5V for low ripple and minimum inductor and capacitor size, which is suitable for single-cell lithium-ion battery supply mobile applications. For high efficiency, the proposed circuit adopts synchronous type and dynamic control. The proposed circuit is designed by using the device parameter of TSMC 0.18um BCD process and the performance is evaluated by Cadence spectre. Experimental board level results show the maximum conversion efficiency is 96% at 100mA load current.

• Journal of IKEEE
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• v.21 no.4
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• pp.331-337
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• 2017

In this paper, we present the design of a 20MHz bandwidth 3rd-order continuous-time low-pass sigma-delta modulator with low-noise and low-power consumption. The bandwidth of the system is sufficient to accommodate LTE and other wireless network standards. The 3rd-order low-pass filter with feed-forward architecture achieves the low-power consumption as well as the low complexity. The system uses 3bit flash quantizer to provide fast data conversion. The current-steering DAC achieves low-power and improved sensitivity without additional circuitries. Cross-coupled transistors are adopted to reduce the current glitches. The proposed system achieves a peak SNDR of 65.9dB with 20MHz bandwidth and power consumption of 32.65mW. The in-band IM3 is simulated to be 69dBc with 600mVp-p two tone input tones. The circuit is designed in a 0.18-um CMOS technology and is driven by 500MHz sampling rate signal.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.501-512
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• 2018

Radio frequency identification (RFID) sensor tag provides several advantages including battery-less operation and low cost, which are suitable for long-term monitoring. This paper presents a self-powered RFID temperature sensor tag for online temperature monitoring in substation. The proposed sensor tag is used to measure and process the temperature of high voltage equipments in substation, and then wireless deliver the data. The proposed temperature sensor employs a novel phased-locked loop (PLL)-based architecture and can convert the temperature sensor in frequency domain without a reference clock, which can significantly improve the temperature accuracy. A two-stage rectifier adopts a series of auxiliary floating rectifier to boost its gate voltage for higher power conversion efficiency. The sensor tag chip was fabricated in TSMC $0.18{\mu}m$ 1P6M CMOS process. The measurement results show that the proposed temperature sensor tag achieve a resolution of $0.15^{\circ}C$/LSB and a temperature error of $-0.6/0.7^{\circ}C$ within the range from $-30^{\circ}C$ to $70^{\circ}C$. The proposed sensor tag achieves maximum communication distance of 11.8 m.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.449-455
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• 2004

This paper presents a novel defect detection method for one chip RF front end with fault detection circuits using input matching measurement. We present a BIST circuit using 40.25{\mu}m$ CMOS technology. We monitor the input transient voltage of the RF front end to differentiate faulty and fault-free RF front end. Catastrophic as well as parametric variation fault models are used to simulate the faulty response of the RF front end. This technique has several advantages with respect to the standard approach based on current test stimulus and frequency domain measurement. Because DUT and fault detection circuits are implemented in the same chip, this test technique only requires use of digital voltmeter (RMS meter) and RF voltage source generator for simpleand inexpensive testing.

• Journal of IKEEE
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• v.22 no.4
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• pp.1025-1030
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• 2018

The proposed modulator is designed by utilizing a conventional structure employing time division technique to realize the 4th order delta-sigma modulator using one op-amp. In order to reduce the influence of KT/C noise, the capacitance in the first and second integrators reused was chosen to be 20pF and capacitance of third and fourth integrators was designed to be 1pF. The stage variable technique in the low power reconfigurable op-amp was used to solve the stability issue due to different capacitance loads for the reduction of KT/C noise. This technique enabled the proposed modulator to reduce the power consumption of 15% with respect to the conventional one. The proposed modulator was fabricated with 0.18um CMOS N-well 1 poly 6 metal process and consumes 305uW at supply voltage of 1.8V. The measurement results demonstrated that SNDR, ENOB, DR, FoM(Walden), and FoM(Schreier) were 66.3 dB, 10.6 bits, 83 dB, 98 pJ/step, and 142.8 dB at the sampling frequency of 256kHz, oversampling ratio of 128, clock frequency of 1.024 MHz, and input frequency of 250 Hz, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.11
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• pp.1627-1634
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• 2021

This paper introduces a low-power compact ADC circuit for analog Convolutional filter for low-power neural network accelerator SOC. While convolutional neural network accelerators can speed up the learning and inference process, they have drawback of consuming excessive power and occupying large chip area due to large number of multiply-and-accumulate operators when implemented in complex digital circuits. To overcome these drawbacks, we implemented an analog convolutional filter that consists of an analog multiply-and-accumulate arithmetic circuit along with an ADC. This paper is focused on the design optimization of a low-power 8bit SAR ADC for the analog convolutional filter accelerator We demonstrate how to minimize the capacitor-array DAC, an important component of SAR ADC, which is three times smaller than the conventional circuit. The proposed ADC has been fabricated in CMOS 65nm process. It achieves an overall size of 1355.7㎛², power consumption of 2.6㎼ at a frequency of 100MHz, SNDR of 44.19 dB, and ENOB of 7.04bit.