• 제목/요약/키워드: Silicon thin

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가변입사각 타원해석법을 사용한 유리기판위의 이산화규소박막의 굴절율 및 두께 측정 (Measurement of a refractive index and thickness of silicon-dioxide thin film on LCD glass substrate using a variable angle ellipsometry)

  • 방현용;김현종;김상열
    • 한국광학회:학술대회논문집
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    • 한국광학회 1996년도 Advance Program of 13th optics andquantum Electronics conference, 1996제13 회 광학 및 양자전자 학술 발표회 논문 요약집
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    • pp.3-3
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    • 1996

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비정질 실리콘을 이용한 다층 유전 박막의 전기적 특성에 관한 연구 (Study on Electric Charactreistics of Multi-dielectric Thin Films Using Amorphous Silicon)

  • 정희환;정관수
    • 한국진공학회지
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    • 제3권1호
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    • pp.71-76
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    • 1994

  • The electrical characteristics of the capacitor dielectric films of amorphous silicon-nit-ride-oxide(ANO) structures are compared with the capacitor dielectric films of oxide-nitride-oxide (ONO) structrues The electrical characteristics of ONO and ANO films were evaluated by high frequency(1 MHz) C-V high frequency C-V after constant voltage stree I-V TDDB and refresh time measurements. ANO films shows good electrical characteristics such as higher total charge to breakdown storage capacitance and longer refresh time than ONO films. Also it makes little difference that leakage current and flat band voltage shyift(ΔVfb)of ANO ana ONO films.

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Performance of Thin Film Transistors Having an As-Deposited Polycrystalline Silicon Channel Layer

  • Hong, Wan-Shick;Cho, Hyun-Joon;Kim, Tae-Hwan;Lee, Kyung-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1266-1269
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    • 2007

  • Polycrystalline silicon (poly-Si) films were prepared directly on plastic substrates at a low (< $200^{\circ}C$) by using Catalytic Chemical Vapor Deposition (Cat-CVD) technique without subsequent annealing steps. Surface roughness of the poly-Si layer and the density of the gate dielectric layer were found to be influential to the TFT performance.

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