• Journal of Power Electronics
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• v.18 no.5
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• pp.1336-1346
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• 2018

Wide band gap semiconductor devices such as SiC MOSFETs are becoming the preferred devices for high frequency and high power density converters due to their excellent performances. However, the proportion of the switching loss that accounts for the whole inverter loss is growing along with an increase of the switching frequency. In view of the third quadrant working characteristics of a SiC MOSFET, synchronous rectification discontinuous pulse-width modulation is proposed (SRDPWM) to further reduce system losses. The SRDPWM has been analyzed in detail. Based on a frequency domain mathematical model, a quantitative mathematical analysis of the harmonic characteristic is conducted by double Fourier transform. Meanwhile, a switching loss model and a conduction loss model of inverter for SRDPWM have been built. Simulation and experimental results verify the result of the harmonic analysis of the double Fourier analysis and the accuracy of the loss models. The efficiencies of the SRDPWM and the SVPWM are compared. The result indicates that the SRDPWM has fewer losses and a higher efficiency than the SVPWM under high switching frequency and light load conditions as a result of the reduced number of switching transitions. In addition, the SRDPWM is more suitable for SiC MOSFET converters.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.3
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• pp.214-221
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• 2021

SiC MOSFETs require a faster and more reliable short-circuit protection circuit than conventional methods due to narrow short-circuit withstand times. Therefore, this research proposes a short-circuit protection circuit using a current-sensing circuit based on Rogowski coil. The method of designing the current-sensing circuit, which is a component of the proposed circuit, is presented first. The integrator and input/output filter that compose the current-sensing circuit are designed to have a wide bandwidth for accurately measuring short-circuit currents with high di/dt. The precision of the designed sensing circuit is verified on a double pulse test (DPT). In addition, the sensing accuracy according to the bandwidth of the filters and the number of turns of the Rogowski coil is analyzed. Next, the entire short-circuit protection circuit with the current-sensing circuit is designed in consideration of the fast short-circuit shutdown time. To verify the performance of this circuit, a short-circuit test is conducted for two cases of short-circuit conditions that can occur in the half-bridge structure. Finally, the short-circuit shutdown time is measured to confirm the suitability of the proposed protection circuit for the SiC MOSFET short-circuit protection.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.497-518
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• 2018

• KIPE Magazine
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• v.24 no.2
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• pp.33-37
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• 2019

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.5
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• pp.376-379
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• 2021

The design and performance of a SiC-MOSFET-based 11-kW bi-directional on-board charger (OBC) for electric vehicles is presented. The OBC consists of a three-phase two-level AC/DC converter and a CLLLC resonant converter. All the power devices are implemented with SiC-MOSFETs to reduce the conduction losses generated in the OBC, and the DC-link voltage is designed to track the level of battery voltage in the forward and reverse powering modes. As a result, the CLLLC resonant converter always runs at the switching frequency near the resonant frequency, resulting in high-efficiency operation at the maximum powering modes. As the DC-link voltage varies according to the battery voltage, the AC/DC converter in the proposed OBC adopts an adaptive DC-link voltage controller. The performance of the proposed 11-kW OBC is verified by a prototype converter with the following specifications: three-phase 60-Hz 380-V input, 11-kW capacity, and battery voltage range of 214-413-V, resulting in the conversion efficiency of over 95.0-% in the forward and reverse powering modes.

• Proceedings of the KIPE Conference
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• 2014.11a
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• pp.197-198
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• 2014

본 논문에서는 Si MOSFET을 차세대 반도체인 GaN FET(Gallium Nitride Field Effect Transistor)으로의 대체 할 시 발생하는 문제점을 분석한다. 다양한 전력변환 시스템에 적용 가능한 위상 천이 풀브리지(Phase Shifted Full Bridge) DC-DC 컨버터를 대상으로 각각 Si MOSFET 및 GaN FET를 적용하고 실험을 통해 문제점을 확인 및 분석한다.

• Proceedings of the KIPE Conference
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• 2017.07a
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• pp.564-576
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• 2017

${\cdot}$ GaN E-HEMT provides superior performance vs. Si MOSFET or IGBT, and also superior performance vs. SiC, below ~1200V ${\cdot}$ GaN E-HEMT is replacing Si MOSFET and IGBT in major application segments, and Industry Adoption will accelerate ${\cdot}$ Technology advances in GaN E-HEMT have made high-current true Normally-Off devices available in current ranges from 7A to 250A ${\cdot}$ While GaN has improved Properties vs. SiC or Si, different types of GaN devices offer different levels of performance or robustness ${\cdot}$ JEDEC Industrial-Grade Qualification of GaN E-HEMTs has been achieved, and Automotive Qualification is in progress.

• Journal of IKEEE
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• v.22 no.4
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• pp.1202-1205
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• 2018

In this paper, we proposed ggNMOS based on 4H-SiC material and analyzed its electrical characteristics. 4H-SiC is a wide band-gap meterial, which is superior in area contrast and high voltage characteristics to Si material, and is attracting attention in the power semiconductor field. The proposed device has high robustness and strong snapback characteristics. The process consisted of SiC process and electrical characteristics were analyzed by TLP measurement equipment.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.1-6
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• 2010

A comparative analysis of quantum-mechanical and classical simulation regarding corner effect in a Saddle MOSFET has been carried out using a 3-D numerical simulator. The comparison has shown that quantum simulation gives correct description of device by providing accurate peak E-density position and magnitude at the Si-fin cross-section, hence accurate analysis of corner effect and its impact on device threshold voltage (Vth) characteristics is carried out. Moreover, rounding the Si-fin comers or lowering the body doping have been shown as two possible techniques to suppress the undesirable corner effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current